Chemical Co-Deposited PbS - CuS Thin Film Characterization: Effect of Annealing

The Minerals, Metals and Materials Society
Mishark Nnabuchi
Organization:
The Minerals, Metals and Materials Society
Pages:
7
File Size:
501 KB
Publication Date:
Jan 1, 2010

Abstract

A heterojunction of PbS - CuS thin film has been grown on glass slides by SGT. The films were annealed for 1hr at temperature of 373K and 423K respectively. The optical properties were characterized using a UNICO UV - 2102 PC Spectrophotometer at normal incidence of light in the wavelength range of 200 - 1000nm. The minimum percentage transmittance was observed to be 34% for sample A and 25% for sample B within the same optical region. The band gap energy was determined from the spectra to be 2.05eV for sample A and 1.85eV for sample B which gave a band shift of 0.20eV. It can thus be concluded that the optical properties of the films within the VIS - UV - NIR can find application in solar thermal technology, particularly as antireflection coating, window materials and as good materials for selective solar cell fabrication.
Citation

APA: Mishark Nnabuchi  (2010)  Chemical Co-Deposited PbS - CuS Thin Film Characterization: Effect of Annealing

MLA: Mishark Nnabuchi Chemical Co-Deposited PbS - CuS Thin Film Characterization: Effect of Annealing. The Minerals, Metals and Materials Society, 2010.

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