Chemical Co-Deposited PbS - CuS Thin Film Characterization: Effect of Annealing

- Organization:
- The Minerals, Metals and Materials Society
- Pages:
- 7
- File Size:
- 501 KB
- Publication Date:
- Jan 1, 2010
Abstract
A heterojunction of PbS - CuS thin film has been grown on glass slides by SGT. The films were annealed for 1hr at temperature of 373K and 423K respectively. The optical properties were characterized using a UNICO UV - 2102 PC Spectrophotometer at normal incidence of light in the wavelength range of 200 - 1000nm. The minimum percentage transmittance was observed to be 34% for sample A and 25% for sample B within the same optical region. The band gap energy was determined from the spectra to be 2.05eV for sample A and 1.85eV for sample B which gave a band shift of 0.20eV. It can thus be concluded that the optical properties of the films within the VIS - UV - NIR can find application in solar thermal technology, particularly as antireflection coating, window materials and as good materials for selective solar cell fabrication.
Citation
APA:
(2010) Chemical Co-Deposited PbS - CuS Thin Film Characterization: Effect of AnnealingMLA: Chemical Co-Deposited PbS - CuS Thin Film Characterization: Effect of Annealing. The Minerals, Metals and Materials Society, 2010.