Diamond Synthesis from Vapours at Low Pressure Conditions

Both diamond crystals and diamond films were grown on silicon and copper substrates using a methane/hydrogen gas mixture as a precursor with thermal CVD techniques at low pressure environment. In addition to diamond particles, other crystalline phases including graphite and aluminum silicon carbide were observed on the substrate surface. ?The grown materials were analyzed with X-ray diffraction, electron microscopy, Auger electron spectroscopy and optical microscopy. Most synthesized diamond crystals were twinned. The flow rate of reactant gases, substrate nature, substrate temperature, decomposition temperature of the precursors, total pressure of reaction chamber, methane/hydrogen ratios and other possible parameters were varied during the growth processes, and the significant effects of these factors on nucleation and growth rate were evaluated.