Eddy Current Sensors for Monitoring the Nucleation and Growth of Cd0.955Zn0.045Te Bulk Crystals

"Non-contact eddy current sensing methods have been developed and applied to Cd0.955Zn0.045Te crystal growth to obtain a better understanding of the melt, solid nucleation, and the growth process. The application of this sensor approach relies on a large difference in liquid and solid electrical conductivities near the melting point and requires knowledge of the relationships between the electrical conductivity, melt composition, and temperature. Using a multifrequency encircling eddy current sensor, the electrical conductivities of three different Cd1-xZnxTe (x=0.00, 0.045, and 0.08) alloys were measured as a function of temperature in a laboratory-scale vertical Bridgman furnace. The measured solid and liquid electrical conductivities were then used in electromagnetic finite element models to analyze the multifrequency responses of eddy current sensor designs during the simulated growth of a crystal. These eddy current sensors were fabricated and installed in a vertical Bridgman furnace and used to monitor many Cd0.955Zn0.045 Te growth runs. One sensor was placed in the vicinity of the ampoule tip to detect undercooling/spontaneous nucleation and two other sensors (""absolute"" and ""differential"" designs) placed to monitor the movement/curvature of the liquid-solid interface during crystal growth. The sensor data was used to characterize the initial melt state, detect the onset of nucle-ation, determine the growth velocity, and identify the shape of the interface.IntroductionSingle crystal CdTe and its solid solution Cd1-xZnxTe alloys (0.03<x<0.05) are used as infrared transparent substrates for infrared focal plane array (IRFPA) detectors [1-6] and as solid state y- ray detectors [7-9j. Cd1-xZnxTe substrates are normally ""mined"" from large polycrystalline boules grown by the unseeded directional solidification of Cd1-xZnxTe melts using either a vertical or horizontal Bridgman process [10-14]. The vertical Bridgman method is particularly popular for growing CdTe and its related compounds. In this process, a Cd1-xZnxTe ingot is produced by first melting a charge in the hot zone of the furnace and then vertically translating the furnace (with its associated axial temperature profile) relative to the stationary crucible to cause directional solidification. In spite of many experimental efforts to investigate the relationships between material purity, stoichiometry, the controllable growth parameters (furnace temperature profiles, ampoule geometries/materials, furnace translation rates and starting position) and the resulting material characteristics (grain structure, dislocation densities, IR transmission, macro-segregation etc.), the yield of Cd1-xZnxTe of a quality suitable for large area (e.g. 4 cm x 6 cm) substrates remains low (<10%). Since much of this poor yield is directly associated with the crystal growth process (e.g. melt stoichiometry, solidification velocity, interface shape, temperature gradients, cooling rate, etc.) intensive efforts are under way to improve this technology."