Electrochemical Characterization Of The Chalcopyrite/Solution Interface

The results of an investigation to characterize the chalcopyrite/solution interface are presented. Several techniques were used, including galvanostatic and steady-state polarization, cyclic voltammetry and impedance spectroscopy. The results show that the dissolution of chalcopyrite was incongruent. Initially, at low potentials (< 0.12 V), iron species were released that led to the growth of an iron-deficient sulfide (IDS) layer (referred to as the "reacted layer" in this paper). Depending on the solution&apos;s composition, the dissolved iron might reprecipitate as a hydroxide layer. In the potential range of 0.12 V < E < 0.23 V, the IDS layer was passivating. In comparison, development of a passivating IDS layer under galvanostatic conditions led to a jump in potential to 0.48 V. The IDS layer began to dissolve at potentials greater than 0.24 V. The dissolved species precipitated to form a product layer in alkaline solutions. Continued oxidation involved diffusion of species through the reacted and product layers. At higher potentials (> 0.48 V), further oxidation led to the dissolution of the copper and sulfur species, with a resultant breakdown of the IDS layer. The changes in surface-coating properties, resulting from various electrochemical treatments, are discussed.