Four Regions in Low-Temperature Creep of Ultrafine-Grained Aluminum

"The present study investigated the low-temperature creep mechanisms in ultrafine-grained (UFG) aluminum manufactured by accumulative roll bonding. UFG aluminum with grain size 0.39 µm showed steady state creep even at room temperature under low stresses as confirmed by the creep curves in the strain rate–strain plot. The low-temperature behavior was divided into four regions by three distinctive stresses, sI, sII and sIII: sI (=45 MPa) is denoted as the micro-yielding stress with which dislocations start movement, sII (=85 MPa) the dislocation-multiplication stress above which dislocations multiply with creep deformation, and sIII (=171 MPa) the conventional yield stress above which macroscopic plastic strain is generated. During low-temperature creep, below sI, negligible plastic strain is generated. Between sI and sII, creep deformation with stress exponent 2.5 occurred, which is accommodated by dislocation absorption into grain boundary and grain boundary sliding, similarly to the low-temperature creep of HCP metals. Between sII and sIII, creep deformation with stress exponent 7.0 occurred, whose mechanism is similar to the low-temperature creep of coarse-grained aluminum. Above sIII, power-law breakdown occurred.INTRODUCTIONIt is well understood that the creep deformation brings about at high homologous temperatures (T/Tm) of >0.4, where Tmis the melting point, with diffusion processes. Recently, the importance of aluminum is increasing for cryogenic temperature parts such as a metallic liner or a cap in high pressure-hydrogen vessels, and the presence of creep behavior in aluminum at room temperature has become recognized (Matsunaga, 2013;Kassner, 2015).In HCP metals and alloys, especially intitanium, steady-state creep behavior appears at room temperature with apparent activation energy of1/10 of that for self-diffusion(Neeraj, 2000; Matsunaga, 2009).On the other hand, Kassner (2015) claims that aluminum shows creep behavior at room temperature with apparent activation energy of 4/5of that forself-diffusion, but never reaches the steady state. We should note that it is derived from the data obtained from short-term creep tests of few hour, and Matsunaga (2013) already claimed the presence of steady state in room temperature creep in aluminum with activation energy of 1/5of that for self-diffusion.The mechanisms for low temperature creep are considered different between HCP and FCC metals: in HCP metals, grain boundary sliding is observed and is thought to accommodate piled-up dislocations at grain boundaries through absorbing them. The so-called slip-induced grain boundary sliding occurs with low number of activated slip systems(Matsunaga,2009).On the other hand, in FCC metals, many activated slip systems bring about work hardening with dislocation cell structure formation. In the initial stage of creep, it results in primary creep (Kassner, 2015), but Matsunaga (2013) claimed that once the annihilating of a cross-slipped dislocation to another reaches balance, steady state is established. It has been, however, strongly required to show more convincing experimental verification for the presence of steady state in FCC metals at low temperature."