Heteroepitaxial Thin Films of Oxides by MOCVD with Pulsed Liquid Injection Using an Ultrasonic Nozzle

"A new method for MOCVD has been developed in which a precursor solution is directly injected into a reaction chamber. The vaporization of short pulses of liquid is facilitated by atomization with a piezoelectrically-operated nozzle. The system has been used successfully to grow oriented, thin Ti02 (rutile) films on sapphire substrates with the crystalline relationship (101)[010]R I (1120)[0001]s. A growth rate of approximately 2 monolayers per pulse was achieved at 650°C for a reactant impingement rate of about 800 monolayers per pulse. Also, epitaxial LiTaO3 thin films were grown on (0001) sapphire from a single source, bimetallic precursor, lithium tantalum hexa-t-butoxide as the precursor. X-ray diffraction shows that the LiTaOa c-axis is normal to the sapphire surface. The x-ray pole figure and crosssection TEM diffraction show that the films were also in-plane oriented, with sapphire [1010] parallel to lithium tantalate [1010]. These films are shown to have extremely low optical attenuation, and refractive index that compares well with bulk values.IntroductionMetalorganic chemical vapor deposition (MOCVD) techniques have come into increasing use in recent years, due to the growing versatility and availability of precursors and improved environmental advantages over the halogenated compounds used for conventional CVD. Most commonly, the films are deposited by dissolving the metalorganic reactant (typically a metal alkoxide) in a carrier gas, which is carried through heated lines to a heated substratel . The metal alkoxides decompose by pyrolysis, leaving the films on substrates. While this method has been used to produce excellent epitaxial and heterepitaxial films, it has the disadvantages of complexity: the precursor must be heated to fix its vapor pressure, the gas flow rate carefully controlled, and the carrier lines heated to prevent condensation before reaching the reactor. Additionally, this conventional method cannot be used with certain low-volatility precursors that decompose upon heating."