High Aspect Ratio Nickel Structures Fabricated by Electrochemical Replication of Hydrofluoric Acid Etched Silicon

A technique for fabricating free-standing, high-aspect-ratio porous and pillar-type Ni structures has been developed using wet Si processing. A wafer of (100) Si was initially etched in HF solution to form deep pores with micron-sized diameter. The aspect ratio can exceed 200. By introducing the as-etched Si into a defined aqueous Ni2+ solution, Ni deposits grew rapidly onto the sidewalls and replaced the Si. Long-time immersion allows the Si sidewalls to be completely converted and thus form a metallic Ni structure with high-aspect-ratio pores. It is known that close-packed submicron Si pillars can be formed by oxidizing and subsequent etching of the macropore sidewalls. Treated in the same Ni solution, high-aspect-ratio Ni pillars were correspondingly emerged by replicating the original pillar-type Si structure.