In situ Synthesis of Silicon-Silicon Carbide Composites from SiO2-C-Mg System via Self-Propagating High Temperature Synthesis

Silicon-Silicon Carbide (Si-SiC) composites were synthesized by self-propagating high temperature synthesis (SHS) from a powder mixture of SiO2-C-Mg. The reaction was carried out in a SHS reactor under static argon gas at a pressure of 0.5 MPa. The standard Gibbs energy minimization method was used to calculate the equilibrium composition of the reacting species. The effects of silica sources and carbon mole ratio in precursor mixture on the Si-SiC conversion were investigated using X-ray diffraction and scanning electron microscope technique. The as-synthesized products of Si-SiC-MgO powders were leached with 0.1M HCl acid solution to obtain the Si-SiC composite powders.