Institute of Metals Division - Creep-Rupture Tests at 1800° and 200°F on Hyper-Pure Silicon Polycrystals (TN)

AS far as could be ascertained, no one had previously investigated the creep strength of silicon poly-crystals. Literature has appeared showing evidence for plastic deformation in silicon single crystals and whiskers.*1"6 Also the fact that germanium, a material of similar crystal structure to silicon undergoes plastic deformation under stress at temperatures above about 60 pct of its melting temperature, has been known for some time.2"4'7 This investigation was performed for the purpose of determining the strength and ductility of silicon polycrystals under creep conditions that would give fairly long times to rupture. PROCEDURE The silicon specimen blanks were obtained by first placing granulated transitor grade silicon (99.999 + pct pure) in a silica crucible. The crucible was surrounded by a graphite susceptor, and induction heating was used for melting the silicon in a vacuum furnace. Blank specimens were formed by freezing molten silicon onto a polycrystalline seed of silicon in a vacuum furnace. The seed was attached to a motor driven revolving rod. As silicon solidified, this rod was gradually withdrawn from the melt. A shape with a contracted center section was obtained by varying the rate of withdrawal from the melt. Specimens for the creep-rupture tests were ground from these "pulled" blanks. Creep-rupture tests were performed in spring loaded machines under constant load at 1800" and 2000° F. RESULTS AND DISCUSSION A test specimen which was sectioned longitudinally is shown in the photomacrograph in Fig. 1. Very little deformation has taken place in the portion of the specimen shown, however, slip lines from several slip systems within the same grain, and deformation band formation was seen. The elongated appearance of the grains is due to the method of growing the specimens. One of the most interesting aspects of the results obtained from the creep-rupture tests was the high strength and the accompanying large amount of ductility. The data obtained is listed in Table I which shows the stress to rupture in 100 hr at 2000°F is between 8000 and 9000 psi. This indicates that silicon's strength at 2000°F is about equal to that of the best commercial super-alloys. It is important to mention that silicon has less than 1/3 the density of iron-, nickel-, and cobalt-base alloys. The usual type alloys for high-temperature applications