Institute of Metals Division - Faults in the Structure of Copper-Silicon Alloys - Discussion

W. Hofmann, J. Ziegler, and H. Hanemann—Having dealt with the same alloys in the winter 1941 to 1942, we want to give a short report on the generating of the hexagonal kappa phase by deforming the supersaturated alpha phase, which we then observed. This work was delivered as a Doctor of Engineering dissertation to the Technical University of Berlin by J. Ziegler in 1942. It still exists in two copies, somewhat damaged, a brief publication of it having been issued in Fiat-Review. Our work was started from the alloy Tombasil with 4.5 to 5 pct Si, 14.5 to 14 pct Zn, the rest Cu. Torpedo propellers were die cast from this alloy in Germany during the war. In order to improve this alloy, annealing was tried. By this treatment the alloy became at the same time harder and more brittle. A further research of this process was made in the Got-tingen University30 and the "Institut fÜr Metallkunde" of the Technical University of Berlin. It soon was apparent that the Cu-Si diagram at our disposal15,31,32 would not fit the observations. For this reason the pith of the matter became from then on the Cu-Si system. At that time we did not know of Smith's* and Andersen'sm latest diagrams. We first knew of them from Dr. Barrett's publication. Twenty-two alloys containing 2 to 11 pct Si were melted in a nitrogen atmosphere and generally homogenized for 2 to 4 hr at 800 °C. Part of the samples were then annealed at 700°, 600° and 500°. Annealing was followed by quenching in water. The phases corresponding to the various temperatures were identified by X-ray and microscopy. The Debye-Scherrer photographs generally were made of filings. The latter were produced after the last anneal of the samples, then equally annealed another 30 min in evacuated glass tubes and quenched in water. In the region of concentrations examined, the Cu-Si phases already known to us were observed: alpha, kappa (then called beta by us), gamma. By hot exposing an alloy of 7.69 pct Si at 800" and 750°,