Institute of Metals Division - Redistribution of Solutes by Formation and Solidification of a Molten Zone

Formation and slow solidification of a molten zone in a homogeneous ingot produces a discontinuity in solute concentration at the boundary of the zone and a gradient of concentration within the zone. By using two solutes, one a donor, the other an acceptor, step or graded pn barriers can be produced. EXPLOITATION of the difference in concentration between a molten solution and the solid which freezes from it is continued in this paper. The normal segregation which results from this difference has been used for purification'.'2 and for pn barrier-formation in semiconductors."4 By means of traveling molten zones this difference has been used to effect multistage separations and to eliminate segregation in ingots." a It will be shown here that by means of stationary molten zones this difference can be used to produce discontinuities in concentration. In particular it will be shown that a pn or npn barrier can be made by the simple act of melting and refreezing a portion of a block of semiconductor, provided that the block contains proper concentrations of a donor and an acceptor in solid solution. Assumptions The operation of melting and slow refreezing will be called remelting and the interface between liquid and solid at the start of refreezing will be called the remelt bormdary. While remelting may be done for various shapes of starting crystal and remelt zone it will be assumed that the remelt zone is cylindrical, its length being measured in the direction of freezing, which is normal to the remelt boundary, and