Institute of Metals Division - Removal of Boron from Silicon by Hydrogen Water Vapor Treatment

The American Institute of Mining, Metallurgical, and Petroleum Engineers
H. C. Theuerer
Organization:
The American Institute of Mining, Metallurgical, and Petroleum Engineers
Pages:
4
File Size:
1286 KB
Publication Date:
Jan 1, 1957

Abstract

EVEN the highest purity silicon available for semiconductor use contains significant amounts of donors and acceptors, usually aluminum, phosphorus, and boron. Aluminum and phosphorus can be removed from silicon by adaptations of the zone refining techniques' widely used with germanium. Removal of boron, however, has been a difficult problem. The approximate distribution coefficient for boron in silicon is 0.8, so that while zone refining is possible, it is not very effective in any reasonable number of passes. It has been found, however, that boron can be effectively removed from silicon by treatment of a liquid zone with hydrogen and water vapor. Starting with 40 ohm-cm, n-type silicon, use of zone refining coupled with hydrogen
Citation

APA: H. C. Theuerer  (1957)  Institute of Metals Division - Removal of Boron from Silicon by Hydrogen Water Vapor Treatment

MLA: H. C. Theuerer Institute of Metals Division - Removal of Boron from Silicon by Hydrogen Water Vapor Treatment. The American Institute of Mining, Metallurgical, and Petroleum Engineers, 1957.

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