Institute of Metals Division - Removal of Boron from Silicon by Hydrogen Water Vapor Treatment

- Organization:
- The American Institute of Mining, Metallurgical, and Petroleum Engineers
- Pages:
- 4
- File Size:
- 1286 KB
- Publication Date:
- Jan 1, 1957
Abstract
EVEN the highest purity silicon available for semiconductor use contains significant amounts of donors and acceptors, usually aluminum, phosphorus, and boron. Aluminum and phosphorus can be removed from silicon by adaptations of the zone refining techniques' widely used with germanium. Removal of boron, however, has been a difficult problem. The approximate distribution coefficient for boron in silicon is 0.8, so that while zone refining is possible, it is not very effective in any reasonable number of passes. It has been found, however, that boron can be effectively removed from silicon by treatment of a liquid zone with hydrogen and water vapor. Starting with 40 ohm-cm, n-type silicon, use of zone refining coupled with hydrogen
Citation
APA:
(1957) Institute of Metals Division - Removal of Boron from Silicon by Hydrogen Water Vapor TreatmentMLA: Institute of Metals Division - Removal of Boron from Silicon by Hydrogen Water Vapor Treatment. The American Institute of Mining, Metallurgical, and Petroleum Engineers, 1957.