Institute of Metals Division - Segregation of Two Solutes, With Particular Reference to Semiconductors

The simultaneous segregation of two solutes during the directional solidification of an ingot is treated mathematically on the basis of simplifying assumptions. Expressions are derived for the difference in concentration of two solutes, and for the location and concentration gradient of a pn barrier formed in a semiconductor by the segregation of a donor and an acceptor. THE problem of normal segregation of a single solute during the freezing of an alloy has been treated mathematically by a number of investigators. Gulliver' showed that coring increases the quantity of eutectic above that to be expected at equilibrium, for a system having limited solid solubility and, on the basis of simplifying assumptions, calculated the fraction of eutectic to be expected. Scheuer2 expressed composition of solid solution in terms of a distribution coefficient and the fraction solidified and compared experiment with calculation for the systems A1-Cu, Al-Zn, Cu-Sn, Cu-Zn. Hayes and Chipman,3 in a detailed study of segregation in a low carbon, rimming steel ingot, calculated distribution coefficients for a number of solutes in iron, compared calculated and experimental segregation curves, and discussed the effects of process variables such as rate of solidification and stirring. In the present paper a mathematical analysis is made of the simultaneous segregation of two solutes during the orderly freezing of a solid solution system, with particular emphasis on the difference in solute concentrations. Although the analysis is quite general and can be applied to the segregation of minor elements in alloys, it is directed in particular at the solidification of a semiconductor containing a donor and an acceptor. Normal segregation has unique aspects in a semiconductor, because of the ways in which donors and acceptors affect the electrical properties. The difference between two solute concentrations becomes of importance, as does also the gradient of the difference where the difference goes through zero, this being the concentration gradient of excess carriers at a pn barrier. A primary object of this paper is to extend the mathematical treatment of segregation to include these newer aspects which are of particular significance for semiconductors. One property of interest is the electrical conduc- tivity, which arises from the presence of donors 'or acceptors in solid solution. The conductivity may be either n-type or p-type depending on whether donors or acceptors, respectively, are in atomic excess. For both germanium and silicon, elements of Group V of the Periodic System, such as P, As, and Sb, are donors and elements of Group 111, as B, Al, In, and Ga, are acceptors.4-6 If a donor or acceptor is present alone in solid solution, the conductivity is proportional to its concentration." If both a donor and an acceptor are present, then the conductivity is proportional to the difference in their atomic concentrations. If the donor and acceptor segregate at different rates then a pn barrier in certain circumstances may form at some point in the ingot. Accordingly, equations are derived and illustrated which express the effect of segregation on: 1—the concentration of a single solute with a discussion of the assumptions; 2—the difference between two solute concentrations and means for minimizing its variation in an ingot; and 3—the location and concentration gradient of a pn barrier. The analysis is applicable to processes in which the entire charge is melted and then progressively frozen from one end. The method in which an ingot is solidified in a crucible7 and that in which a solidifying rod is pulled from the melt8 both fall into this category. Segregation of One Solute If a cylinder of molten alloy is caused to freeze slowly from one end, a normal segregation of solutes will usually occur, producing a lengthwise concentration gradient in the ingot. Depending on whether a solute raises or lowers the melting point of the solvent, it will become concentrated in the first or last regions, respectively, to freeze. If it is assumed that freezing is such that there is no diffusion of solute in the solid, complete diffusion in the liquid, and that k, the distribution coefficient, defined as the ratio of solute concentration in the just-freezing solid to that in the liquid, is constant, then the