Institute of Metals Division - Stacking Faults in Platinum (TN)

SEVERAL investigators have computed stacking-fault concentrations from X-ray diffraction data.'-' The method generally employed relates the line shift to the stacking-fault probability. In this investigation platinum filings of 99.99 pct purity screened to -325 mesh were studied after having been subjected to various annealing treatments. The lines were measured on a General Electric XRD-5 spectrogoniometer using CuK, radiation. The centroid of the broad reflections was determined by the method proposed by pike.' The stacking-fault probability was calculated by the formula given by Warren and warekois,3 with the assumption that all stacking faults were on the (111). Various high-angle reflections were used, but most data collected refer to the shift in the (400) reflections. When the filed platinum powder was annealed at 1200°C for 20 min the stacking fault concentration was too small to be detected. The stacking-fault probability in freshly filed specimens, as determined by the line shift relative to the annealed specimen, was about 0.016, Fig. 1. If the faults would be created only by extended dislocations, the dislocation density in the filed specimen would be about 3X1012 cm-2. The average stacking-fault width of about 21 which was used in this computation, is that given by Thornton and Hirsch.7 The mechanism by which stacking faults are annihilated during annealing is not yet fully understood. The isothermal results obtained do not seem to support the simple hypothesis of a first-order decay. On the other hand, the analysis by Kuhlmann, Masing, and Raffelsieper8 for the loss of dislocations during recovery agrees much better with the experimental data of this investigation. This analysis yields an activation energy of 29 ± 8 kcal per mol for the disappearance of stacking faults in cold-worked platinum during annealing. Even if one takes into account the lack of accuracy inherent in this X-ray method, the activation energy found is substantially less than that of self-diffusion in platinum, i.e., 61.6 kcal per mol.9 The results therefore suggest that processes other than dislocation climb, which involves the activation energy of self-diffusion, are responsible for the loss of stacking faults in platinum during annealing. The broad reflection lines became sharper early in the recovery process, Fig. 1. The sharpening occurred well before the stage during which stacking faults disappear. This lends support to Nowick's10