Institute of Metals Division - The Deposition of Oxide on Silicon by the Reaction of a Metal Halide with a Hydrogen-Carbon Dioxide Mixture

This paper reports some of tile results obtained from the vapor-phase reaction of a volatile metal halide with a hydrogen and carbon dioxide mixture in an epitaxial-deposition chamber. Tile oxides deposited were silicon di oxide, aluminum oxide, mix-12tves of silicon di oxide and aluminum oxide, and titanium oxide. Tile deposited silicon di oxide was transparent and amorphous and had a density and index of refraction similar to that of thermally grown silica. The vote of etching was determined. The thickness uniformily of the oxide was found to he related to the aerodynamics of the system employed for deposition. A clear silicon di oxide layer was found to be dependent upon the quality of the surface prior- to aside deposition. The process parameters affecting the vale 0f deposition were studied. The deposited aluminum oxide was transparent, holy-cl-ysttrlliile, and possessed remarkable resistance to hydrofluoric acids. By measurements it has been shown that the deposited aluminum oxide is both insulating and continuous. ThE cleanness of an epitaxial silicon surface both immediately after growth and during device processing is thought to be one of the major factors contributing to the electrical properties of a final device. The advantage of protecting an epitaxial silicon wafer surface with an oxide grown immediately following epitaxial deposition is obvious. The successive growth of silicon and silicon diox- ide in epitaxial apparatus was studied by Steinmaier and loem.' They formed silicon dioxide films on a silicon substrate by adding water vapor to the silicon tetrachloride-hydrogen mixture in an epitaxial system. They also showed that, when a gaseous mixture of carbon dioxide and hydrogen is injected, water is formed only at elevated temperatures. Thus the reaction of water vapor and silicon tetra-: chloride will be limited to a relatively small reaction zone near the substrate. This paper reports some results of oxide films obtained from a vapor-phase reaction of a volatile metal halide with a hydrogen and carbon dioxide mixture in an epitaxial-deposition chamber. EXPERIMENTAL APPARATUS The system employed for the oxide deposition is a modification of a vertical system used to produce high-resistivity silicon layers by the hydrogen reduction of silicon tetrachloride.' The modification shown schematically in Fig. 1 consisted of an additional carbon dioxide gas stream which entered the reaction chamber with a hydrogen stream saturated with metal halide vapor and a diluting hydrogen stream. Silicon dioxide layers made from a mixture of silicon tetrachloride, hydrogen, and carbon dioxide gases will be discussed first. EXPERIMENTAL RESULTS 1) Factors Affecting the Rate of Oxidation. An epitaxial silicon layer was deposited by the hydrogen reduction of silicon tetrachloride on an n-type,