Institute of Metals Division - Zone Purification of Reactive Metals

ZONE refining, as developed by W. G. Pfann,1 has been used extensively for the purification of semiconductors. This method has made it possible to obtain the extremely high purity material necessary for the transistor industry. It has also been utilized to some extent for the purification of relatively low-melting-point metals. However, very little attention has been given to reactive, high-melting-point materials, with the exception of silicon. For this element, it has been necessary to use the floating zone technique in order to avoid contamination from the crucible containing the melt. The method is one in which a narrow molten zone is formed in a vertical rod by induction heating. The molten zone is supported between the two solid sections of the rod by surface tension. It is then moved longitudinally along the rod in order to effect a redistribution of solute. This technique has an advantage over the horizontal boat method, since crucible contamination is avoided. It has the disadvantage of being a much more difficult technique than zone refining in a crucible. Furthermore, it is necessarily a slow process, since only one zone at a time can be formed. However, the floating zone process offers a means of obtaining high-purity metals that are either not available, or can only be obtained in powder or pellet form as the result of complex chemical or electrochemical methods. It should be emphasized that the process is not effective in removing all impurity elements. Those that cannot be redistributed in an ingot during zone melting must be removed by some other means. Very little is known of the prope~ties of very high purity reactive metals such as iron, titanium, zirconium, beryllium, etc. It is quite likely that trace elements in such metals can affect their properties drastically. Therefore, one of the primary objectives of this work is to study the properties of metals which have been obtained in the purest form available and then zone refined. Trace elements can be introduced in a variety of ways, such as by inserting wafers between solid portions of the ingot to be melted, by placing the