Laser Synthesis of Conductive Phases in Silicon Carbide and Aluminum Nitride

"Nd: YAG, KrF excimer, and Cu-vapor lasers are used in air to synthesize conductors and semiconductors as a second phase in silicon carbide and aluminum nitride. Conductor resistivities as low as 104 O-cm are formed in these substrates; the resistivities for the untreated substrates range from 10 11to 1014 O-cm. The silicon carbide conversion is relatively independent of wavelength while the aluminum nitride conversion shows a dependence on wavelength over the range 248 nm to 1064 nm. Silicon carbide conductors, evaluated over the range 15 K to greater than 300 K, exhibit metal like conductivity; resistivity increases with temperature. Silicon, carbon, and oxygen are identified as the principal chemical species associated with the conductor in SiC substrates while aluminum, nitrogen, and oxygen are identified as the principal chemical species associated with the conductor in aluminum nitride substrates. The silicon carbide system, which has the less complex phase diagram, is evaluated in more depth to explain the synthesis mechanism. Oxygen was principally on the surface and increasing SiC conductivity is associated with decreasing spacing between 5 µm, or less, diameter carbon globules. This technology is proposed as a replacement for metallization in electronic packages, sensors and devices. INTRODUCTIONCeramics are commonly used for multichip module, hybrid and multilayer electronic packaging; semiconductor device and sensor applications because of the insulating, conducting, semiconducting, or superconducting properties that these materials possess (1,2) The majority of ceramics, however, have not been known to exhibit conductive or semi conductive properties when exposed to rapid thermal heat processing. A ceramic and process which through selective conversion can combine two or more of these electrical properties to eliminate the need for metallization is of interest to both the commercial and military sectors."