Low Temperature OMCVD of Thin Rhodium Films

Thin, highly reflective rhodium films with metal compositions greater than 98% (elemental -weight percentage) have been deposited by chemical vapor deposition using Rh(allyl)3 (ally1 = q3-C3H5) in the presence of a hydrogen plasma. Uniform, crystalline films that adhere well to several types of substrates result from depositions at temperatures as low as 150°C. Depositions using H2 (no plasma), or an argon plasma yields material that is amorphous, contains a significant amount (>14%) of residual carbon, and has a dramatically slower growth rate. The composition of these materials does not vary significantly from that of the materials obtained from the in vacuo thermal deposition with Rh(allyl)3.