Metal-Organic Chemical Vapor Deposition for the Synthesis of Advanced Materials

The Minerals, Metals and Materials Society
Bruce W. Wessels
Organization:
The Minerals, Metals and Materials Society
Pages:
10
File Size:
391 KB
Publication Date:
Jan 1, 1994

Abstract

"Metal-organic chemical vapor deposition has been shown to be a highly versatile technique for the synthesis of complex oxides. High dielectric constant oxide thin films of SrTiO3, BaTiO3, Ba1-xSrxTiO3 and SrxBa1-xNb2O6 can be be be deposited at 800 ºC with this technique. The fluorine substituted B-diketonate precursors have been shown to be well-suited for the deposition of high quality, epitaxial thin films of these materials.IntroductionThere has been a resurgence of interest in thin film ferroelectric oxides as a result of the development of techniques to deposit high quality material. Both physical and chemical vapor deposition techniques have been realized. Of the chemical vapor deposition techniques, metal-organic chemical vapor deposition (MOCVD) has received the most interest for the deposition of ferroelectric oxide thin films. This results, in part, from the availability of a number of volatile metal-organic precursors.(l) Moreover, MOCVD offers the advantages of high growth rates, uniform coverage over large areas, conformability, abrupt interfaces and excellent epitaxial crystallinity. Of the metalorganic precursors, the B-diketonate complexes have played an important role especially in the deposition of ferroelectric oxides containing alkaline-earth metals such as BaTi03 and Ba1•XSrxTi03. For example, barium tetramethylheptanedionate Ba(thd)2 has been used in the preparation of BaTi03 by MOCVD.(2) These compounds, however, are not without their problems. Ba(dpm)2 has a relatively low volatility; and as a consequence, temperatures in excess of 180·C are required for volatilization. This leads to the necessity of a complex precursor delivery system to insure that the precursor does not condense before the reaction zone. Moreover, the Ba precursor tends to oligomerize leading to a decrease in vapor pressure as well as a problem with reproducibility. To counter these problems, novel liquid source and solid source precursor delivery systems have been developed. (3)(4)"
Citation

APA: Bruce W. Wessels  (1994)  Metal-Organic Chemical Vapor Deposition for the Synthesis of Advanced Materials

MLA: Bruce W. Wessels Metal-Organic Chemical Vapor Deposition for the Synthesis of Advanced Materials. The Minerals, Metals and Materials Society, 1994.

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