Metalorganic Chemical Vapor Deposition (MOCVD) of Oxides for Electronic and Photonic Applications

"Metalorganic chemical vapor deposition (MOCVD) is an ideal technique for the deposition of conducting and non-conducting oxide based thin film materials. In this paper we have presented a study of photo assisted MOCVD for the low temperature deposition of a number of oxide based advanced materials. We have used incoherent light sources as the source of optical and thermal energy in our MOCVD system. The vacuum ultraviolet (VUV) and ultraviolet (UV) photons can enhance the surface reaction of the absorbed molecules through the perturbation of the electronic state of binding between the absorbed molecules and the solid surface. Unlike plasma process, no surface damage is expected and high quality materials have been deposited. At a given substrate temperature, the performance of deposited film depends on the lamp configuration.INTRODUCTIONMetalorganic chemical vapor deposition (MOCVD) has become the standard manufacturing technique for the deposition of large area thin films of compound semiconductors. l.(.w-cost, high crystalline quality, atomically clean and sharp interfaces, atomic layer epitaxy, high throughput rates and potential for direct writing are some attractive features of MOCVD. Due to a number of potential advantages mentioned above, MOCVD is considered as an ideal technique for the deposition of various electronic and optical materials for a wide variety of applications. Rapid isothermal processing based on incoherent radiation as the source of optical and thermal energy is emerging as the key low thermal budget (integral of processing time and temperature) processing technique for the fabrication of current and next generation of microelectronic and optoelectronic devices and circuits [1]. In this paper we have demonstrated that the design of the lamp assembly plays an important role in determining the properties of the materials deposited by RIP assisted MOCVD. We have studied the growth rates, structural properties and electrical properties of Y2O3/Si structure. At a given substrate temperature, best results are obtained for the lamp assembly that provides maximum number of VUV and UV photons."