Part III – March 1968 - Papers - Compound Semiconductors for Integrated Circuitry

This paper presents a review of the technologies which have been used in the application of III-V compound semiconductors to integrated circuits and arrays. These materials have properties which make them useful for various devices such as: light emitters, sensors, microwave sources, and microwave diodes. Technologies for incorporating these devices into integrated circuits have been reported and processes developed for fabricating planar devices using selective epitaxial deposition or selective diffusions. Isolation methods utilizing semi-insulating GaAs, oxide isolation, and ceramic insulation have also been reported. These techniques, and the devices and circuits produced or proposed are discussed. AFTER the invention of the silicon-integrated circuit, methods for utilizing compound semiconductors for integrated circuit applications were proposed. The scope of applications was potentially much broader because of the range of properties available from these materials. There also was the opportunity of coupling these properties with germanium and silicon devices to realize functions and circuits which could not be produced with silicon monolithic circuits. Table I exemplifies the range of electrical properties available in III-V compound semiconductor materials which are currently being widely used. A wide range of sensor and emitter applications result from the range of band gap. The band structure of GaAs and GaAsxP1-x permits their use as microwave oscillator source, and the high electron mobilities further facilitate their utility in microwave devices. The concept of "integrated functions"1 results from the availability of these materials and methods for utilizing their special properties. Heteroepitaxial growth allows the fabrication of a monolithic block of these materials. Semi-insulating GaAs permits the attainment of electrical isolation between components in a monolithic block without resorting to p-n junction biasing or oxide isolation methods. An "integrated function" is a unit which can perform a system or subsystem role and perform a number of electromagnetic functions. These functions could include sensor or input transducer, signal processing, interconnections, and control or output function. Two examples which demonstrate this concept are an optoelectric processor and a microwave receiver front end. The optoelectronic processor, Fig. 1(a), would consist of a light sensor, signal processor, and output emitter. The sensor could be InSb or InAs which would be IR-sensitive. The signal from this sensor would then be amplified and transmitted to the light emitter. The amplifier could utilize GaAs bipolar or field effect transistors. A Gap emitter would then produce visible radiation. The microwave receiver front end, Fig. l(b), would consist of a local oscillator section and a mixer section. A signal input from an antenna is mixed with the signal from the local oscillator. The local oscillator signal is produced by a Gunn oscillator. The single-ended mixer utilizes one Schottky barrier mixer diode. The IF signal would then be amplified further and suitably displayed. A further extension of the capability of utilizing the