Part III – March 1968 - Papers - Epitaxial Growth of GaSb from the Liquid Phase

Thin, heavily doped n-type layers of GaSb have been grown on p-type GaSb substrates. Techniques have been developed for the growth of the n-type layers from a tellurium-doped gallium-rich solution. The solution used consists of 95 at. pct Ga and 5 at. pct Sb. The process consists of immersing the p-type wafer in the solution at a temperature slightly above the liquidus temperature, holding briefly to permit dissolution of the substrate surface, then decreasing the temperature to a value slightly below the liquidus to obtain 1 HE resistivity of n-type GaSb varies linearly with applied hydrostatic pressure, while the resistivity of p-type GaSb is insensitive to such pressure.1,2 The growth. Growth from a solution of GaSb in tin will also be described. In either case the substrate is clamped to a shelf at one end of a graphite boat, and immersion of the wafer and subsequent decanting of the solution is accomplished simply by tilting the furnace. The process is useful for the formation of p-n junctions in III-V compounds and has the advantage that the problems normally associated with diffusion of Group VI elements are not present. Layers up to 4.0 mils in thickness have been grown by the process. material therefore should be useful in a hydrostatic pressure-sensing device. A practical hydrostatic pressure sensor, however, requires the fabrication of GaSb sensing elements of several hundred ohms resistance. Attempts were made to prepare such elements by diffusion, taking advantage of the high sheet resistance of the thin diffused layers and depending upon the p-n junction to provide isolation from the base layer. Additionally, thin layers of conductivity type opposite from that of the base layer were pre-