Part III – March 1968 - Papers - Heteroepitaxial Silicon-Aluminum Oxide Interface-III: Additional Studies of the Orientation Relationships of Single-Crystal Silicon on Sapphire

The observation that silicon-on-sapphire crystallo-graphic relationships exist which are unrelated to one another implies that there are regions of sapphire orientations containing these relationships which are separated by boundaries. The presence of these boundaries is demonstrated, initially on rounded cylindrical surfaces md more definitively on flat sapphire substrates with orientations along primary crystallograPhic zones. By means of reflection electron and X-ray diffraction techniques the crystallographic relationships have been studied. Two new relationships have been found, viz., (111) Si (1014) sapphire and (001)Si (1012) sapphire. Also found were multicrystalline relationships. The approximated boundaries between the crystallographic regions for each relationship are shown by means of a stereo-graphic projection. These studies also clarify discrepancies in the literature concerning the silicon-sapphire relationships on the (1120) sapphire substrate. SINCE the first report of the deposition of single-crystal silicon on sapphire in 1963' this epitaxial system has been the object of study by many semiconductor laboratories. In particular, there has been strong interest in the crystallographic relationships between the two materials. In 19652,3 we demonstrated that at least four distinct modes of orientation relationships can occur, namely, (100)Si (0112) sapphire, (111)Si 11 (1124) sapphire, (111)Si (1120) sapphire, and (111)Si (0001) sapphire. Each relationship could be obtained when the substrate plane was at the particular orientation indicated. Other workers as well as our laboratory concurred in general with the initial results. However, two discrepancies were observed. First it was observed by Joyce et a1.4 that on a (1120) substrate a (110) silicon deposit could be obtained. This was actually consistent with the (111)Si (1124) sapphire mode. Second, two other laboratories,5,6 as well as our own,7 have found a deposition on the basal plane which is different than our initial findings. Even though a (111)Si deposit was obtained, the crystallographic relationships were not identical to those previously found. Subsequent work in our laboratories has confirmed that the form found in these later investigations of the basal plane is by far the more predominant, and the original finding was an anomaly. The relationships which have been previously estab1.ished are summarized in Table I. It is seen that at present a rather small number of possible substrate orientations has been investigated. Therefore, it seemed appropriate that a systematic investigation of silicon epitaxy on various sapphire substrate orientations would be of value. It was expected that the answers to three questions could be obtained from such an investigation. These are as follows: 1) Since we know of at least four distinct modes of orientation relationships, over what range of substrate orientation do these modes occur and what is the form of the boundary expected between the different regions in which each mode occurs? 2) Are there other modes which occur on substrate orientations not previously investigated? 3) What is the explanation for the discrepancy between our laboratory's findings and those results reported by Joyce et al.4 concerning the relationships occurring on (1120) substrates? APPROACHES AND EXPERIMENTAL METHODS Two different approaches were used. Initially, depositions were carried out on rounded cylindrical surfaces which lay perpendicular to the (0112) plane.* By this means the presence of boundaries and their approximate positions could be determined. Finally and more definitively, depositions on flat sapphire substrates with a variety of orientations, mostly along primary crystallographic zones and about the (1120) plane, were studied by means of reflection electron diffraction and X-ray diffraction (using back-reflection Laue patterns and full circle goniometer techniques) in order to determine crystallographic relationships. The sapphire orientations investigated by these means