Part III - Papers - Measurement of Single Quanta of Electromagnetic Radiation

p-n junctions to detect and measure the energy of single quanta of electromagnetic radiation are described. Useful energy range is from 1 kev to several Meu. Achieved energy resolution varies from 30 pct at 6 keu to 0.12 pct at 2 Mev. Parameters affecting the perfornzance of the present detectors and desired of a new material are discussed. DURING the last 6 years semiconductor detectors have been used extensively to detect and to measure the energy of charged particles. These detectors are made from reverse-biased p-n junctions. Electron-hole pairs are created in the depletion region of the junction, Fig. 1. The carriers are separated by the electric field and give rise to a pulse of current in the external circuit. This current pulse is proportional to the number of carriers and hence to the energy deposited in the depletion region by the ionizing event. More recently the discovery of the lithium drift process, first in silicon' and then in germanium,2 has extended the use of semiconductor detectors to the detection and the energy measurement of single quanta of electromagnetic radiation. These detectors now have a useful measurement range extending from the soft X-ray region, about 6 kev, to the hard y ray region of several Mev. Surface-contoured avalanche diodes can be used to extend this range down to 1 kev. There is however a desire for other materials suited to higher operating temperatures, and particularly for those materials with high y ray stopping power. The most important advantage of the semiconductor detector over gaseous and scintillation detectors is the average energy, E, required to form an electron-hole pair. Fig. 2 shows the quantum efficiency for germanium as a function of photon energy.3 At the band-gap energy, 0.7 ev, an electron-hole pair is generated by the absorption of the photon and the quantum efficiency is unity. The quantum efficiency remains constant at unity between 0.7 and 3 ev. It then increases as additional electron-hole pairs are formed by secondary ionization of the initial photoelectron. The rate of increase is about 1 electron-hole pair per 3 ev (actually 2.9 ev for germanium and 3.6 ev for silicon). This figure is constant irrespective of the particle type (electron, proton, a particle, heavy ion) and energy. In an ionizing event an incident particle of energy E will create N = E/e ion pairs. The statistical fluctuation in this number is proportional to &. The fractional energy resolution is therefore proportional