Part III - Papers - Rapid Vapor Phase Growth of High-Resistivity GaP for Electro-Optic Modulators

Single-crystal Gap lms been epitaxially grow from the vapor phase at a rate oJ 3 p per nzin without encountering a7Zy low-ang-le grain boundaries or debwading- the electrical properties of the material. This growth rate exceeds any value previol~sly reported for the vapor phase growth of Gap. In pure material, mObilities ns high as 175 sq cm per U-sec at room tenzperature and 1450 sq cm per v-sec at 77°K have been obtained. These values are anLong the highest that have been attai)led for this material. For the first time, Gap possesses a number of important properties which make it well-suited for use in electro-optic modulators. First, the transverse electro-optic effect is operable in this material, which makes it possible to increase the path length of the modulated iron doping of Gap has been achieved; this results i?z resistivities of approximately 10" ohm-cm. The problelrls of residual strain and isolated shorting paths in these crystals have been partially solved. Electro-optic modulation of visible radiation has been demonstrated with this material. It is anticipated that further improvement with regard to the probleins of strain and shorting paths will result in a practical Gap electro-optic modulator. radiation without increasing the applied voltage. In addition, this permits the use of thin crystals so that relatively small voltages are needed to provide the requisite high electric fields. Second, GaP is a cubic crystal and therefore does not introduce critical optical-alignment problems associated with birefrin-gent crystals, such as ammonium dihydrogen phosphate (ADP), and potassium dihydrogen phosphate