Part IX – September 1968 - Communications - On the Mechanism of Creep in Alpha Iron

THE purpose of this note is to show that the dislocation mechanism controlling the creep of Fe-4 pet Si alloy1 may equally account for the behavior of a-Fe2 over the same temperature range. A recent study of the creep behavior of a-Fe has been made by Ishida et al.2 Their results were in agreement with the mechanism of nonconservative motion of jogged screw dislocations over the entire range of temperatures investigated, from 480° to 1045°K. However, the observed creep rate was much higher than that which could be accounted for by the above model unless the authors assumed that pipe diffusion became significant below 775°K. More recently, Cheng et al.1 inves-gated the creep of Fe-4 pet Si alloy over about the same temperature range and found that the results could be correlated fairly well with a dislocation climb mechanism as represented by Eq. [l]. Proceeding as shown previously,1 if creep is controlled by a single climb mechanism, at intermediate stresses, the shear creep rate, y, can be represented by where n and K are material constants {K is independent of the temperature but dependent on the structure, that is, K decreases during the primary stage and reaches a steady-state value over the secondary stage of creep), t is the applied shear stress, G is the shear modulus, gc is the free energy of activation for creep (usually equal to that for self-diffusion, gd), and RT has the usual meaning. By solving for y, the apparent activation energy for creep, Q which can be determined experimentally, is given by where hc is the enthalpy of activation for creep which usually is also equal to that for self-diffusion, h^. By using Eq. [2], the data in Fig. 2 of Ref. 2 can be re-plotted as shown in Fig. 1. By comparing the two figures, it is seen that the slight increase in the apparent activation for creep over Region II, as noted in Fig. 2 of Ref. 2, is due to the influence of temperature on the shear modulus rather than of the stress on the