Part IX – September 1969 – Communications - Ternary Phase Diagrams for the Si-C-O System

The American Institute of Mining, Metallurgical, and Petroleum Engineers
A. Ghosh G. R. St. Pierre
Organization:
The American Institute of Mining, Metallurgical, and Petroleum Engineers
Pages:
3
File Size:
265 KB
Publication Date:
Jan 1, 1970

Abstract

In the Si-C-0 system at temperatures of interest in process metallurgy there are four stable condensed phases—silicon, carbon, silica, and silicon carbide (Sic). Silicon melts at 1683oK1 and shows negligible solubility for carbon and oxygen at 1700°K. However, silicon dissolves approximately 1.5 at. pct C at 2500oK.2 Carbon in the form of graphite remains pure and dissolves negligible amount of silicon.' Silica (crysto-balite) melts at 2001°K' and is essentially a stoichio-metric compound. Silicon carbide is a solid and shows negligible deviation from stoichiometry up to approximately 2800oK.2 Besides the condensed phases there is a gas phase
Citation

APA: A. Ghosh G. R. St. Pierre  (1970)  Part IX – September 1969 – Communications - Ternary Phase Diagrams for the Si-C-O System

MLA: A. Ghosh G. R. St. Pierre Part IX – September 1969 – Communications - Ternary Phase Diagrams for the Si-C-O System. The American Institute of Mining, Metallurgical, and Petroleum Engineers, 1970.

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