PART XII – December 1967 – Communications - Nature of Stacking Faults in Close-Packed AB , Superlattices

The American Institute of Mining, Metallurgical, and Petroleum Engineers
T. Carnahan B. Cullen J. Demel J. Mcllwain M. J. Marcinkowski J. Munford J. Pahlman T. Prevender J. Warner
Organization:
The American Institute of Mining, Metallurgical, and Petroleum Engineers
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1
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308 KB
Publication Date:
Jan 1, 1968

Abstract

The following analysis was an outgrowth of a midterm examination given by one of the authors (M.J.M) in a course entitled Metallurgy 541 "Applications of Dislocation Theory'' at Iowa State University. Fig, l(a) shows the three-layer sequence of atoms lying in the (111) plane which characterizes the fully ordered AB3 fcc crystal, i.e., LI2 type. If any two-layer sequence of close-packed planes is constructed from Fig. 16)' the structure would be hcp of the DO,, type. Consider for convenience that the circled atoms lie in the plane of the drawing while those shown square and triangular lie immediately above and below the plane of the drawing, respectively. It has already been shown' that if a Shockley partial dislocation is passed over the plane of the paper, then the square atoms in Fig. 1(a) are displaced from their original positions as shown by the arrows in Fig. l(b). Not only is an intrinsic fault produced but the crystal is simultaneously disordered across the slip plane. In particular, 2AB bonds are converted to 1AA and 1BB bonds when referred to the area outlined by the solid line in Fig. 1. If, on the other hand, a Shockley partial is allowed to pass immediately above and immediately below the plane of the paper so as to displace the atoms in opposite directions as shown in Fig. l(c), an extrinsic fault is producedZ and twice the amount of disorder is introduced into the crystal as compared to the dislocation-produced intrinsic fault, if only broken first-neighbor bonds are counted. If an intrinsic stacking fault is produced by removing a close-packed plane of atoms in Fig. l(a) and displacing the two adjacent planes by 1/3a0[111], no wrong nearest-neighbor bonds are produced. Similarly, if an extra half plane of atoms with the same arrangement as any of those shown in Fig. l(a) is inserted between any two planes in the same figure, then an extrinsic stacking fault is produced in which once again no wrong nearest-neighbor bonds are produced. The latter two faults are bounded by Frank partial dislocations. Since, at least in the alloy CU3AU,3 nearly all of the ordering energy resides in the first nearest-neighbor interactions, intrinsic and extrinsic stacking faults and associated APB's of the Frank type are expected to have significantly lower energy than those of the Shockley type in CusAu in particular and quite likely in L1, and DO19 type alloys in general. Also, because of the higher degree of disorder plus loop interaction
Citation

APA: T. Carnahan B. Cullen J. Demel J. Mcllwain M. J. Marcinkowski J. Munford J. Pahlman T. Prevender J. Warner  (1968)  PART XII – December 1967 – Communications - Nature of Stacking Faults in Close-Packed AB , Superlattices

MLA: T. Carnahan B. Cullen J. Demel J. Mcllwain M. J. Marcinkowski J. Munford J. Pahlman T. Prevender J. Warner PART XII – December 1967 – Communications - Nature of Stacking Faults in Close-Packed AB , Superlattices. The American Institute of Mining, Metallurgical, and Petroleum Engineers, 1968.

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