Preparation and Properties of CuIns2 Thin Films by Electrodeposition and Sulfurization

"CuInS2 thin films solar cells have drawn much attention for their low-cost, stability and high conversion efficiency. The electrodeposition of Cu-In precursor films, as the first step in making CuinS2 solar cells electrochemically in the air-and water-stable ionic liquid based on choline chloride/urea eutectic mixture has been investigated at constant potential. Compared with aqueous electrolytes, the large electrochemical window as well as the high thermal stability of this ionic liquid allow the direct electrodeposition of Cu-In precursor films. Then the precursor films were sulfuretted in a tube furnace at different sulfurization temperatures to optimize the films properties. The films obtained were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS).IntroductionCuInS2 is one of the most prospective absorber materials for low cost thin film solar cells, with a high conversion efficiency that exceeds 32% in terms of theory and nearly 13% in laboratory level [1-2]. In addition to its long-term stability, CuinS2 has a band gap energy Eg ranging from 1.3 to 1.55 eV and an optimal optical absorption coefficient reaching 105cm-1 [3-4]. CuinS2 thin films have been prepared by several methods such as spray pyrolysis [5-6], r.f.sputtering [7], vacuum evaporation [8-9] and electrodeposition. Comparing with vacuum methods, electrodeposition has lots of advantages such as less energy consumption, preparation big area thin film, stable system and enabling cheaper films.The electrodeposition of most technologically important metals has been shown to be possible from a wide range of ionic liquids. These ionic liquids are currently applied in a wide variety area. It is reported that the cell efficiency of chalcopyrite absorber layer (CIS, CISeS, and CIGS) via an electrodeposition route in laboratory condition has reached 11.3% [10]. Copper and indium alloy film is regarded as important precursor for the production of compound semiconductors with sulfur. The electrodeposition of the alloy film from room temperature ionic liquid (RTIL) has not been widely investigated. Only few alloy films, such as ZnTe, CdTe, GaAs and AlSb have been electrodeposited."