Rapid Epitaxial Growth of Conducting and Insulating III-V Compounds on (001), (110), (111)A, (311)A and (311)B Surfaces by HVPE

"Rapid growth of conducting and/or insulating InP, GaAs, Gao.47In0.53As, and GaAs0.6Po.4 on one or more of (001), (110), (111)A, (3ll)A and (3ll)B surfaces by Hydride Vapour Phase Epitaxy (HYPE) is demonstrated. The maximum growth rate of the binaries lies between 12 and 300 µm/hr and of the ternaries between 7 and 170 µm/hr. A simple model is developed to describe the influence of crystallographic orientation on temperature dependent growth rates. The growth rates predicted by the model is compared with the experimental values. Room temperature resistivity of insulating InP:Fe can be as high as 5xl09 ohm cm. Temperature dependent differential resistivity is also analysed. This feasibility of growing conducting and insulating layers rapidly on different orientations is very useful for electronic and optoelectronic devices.IntroductionRecently there is a renewed demand for very thick layers of III-V compound semiconductors for high performance electronic and optoelectronic devices [1]-[2]. Long wavelength high speed lasers that can be modulated up to 30 GHz necessitate epitaxial growth of semi-insulating (SI) layers [3]. There is also an increased interest on the growth of epitaxial layers on surfaces other than (001) surface. Epitaxial growth of these materials on such surfaces is of theoretical importance besides being technologically relevant. These demands led us to focus on the growth of conducting and insulating III-V compounds by Hydride Vapour Phase Epitaxy (HYPE). lnP, GaAs, Gao.471no.s3As on lnP and GaAso.6Po.4 on GaAs were grown as conducting materials using Low Pressure HYPE (LP-HYPE) on (001) 2° off substrates. Gao511no.49P on (001) GaAs substrate and lnP on lnP substrates of (001), (110), (l 11)A, (31l)A and (3 ll)B orientations were grown as semi-insulating materials using Atmospheric Pressure HYPE (AP-HYPE). In this report we present the growth aspects of these materials. We also present a simple model on the growth of InP on substrates of various orientations. The theoretically obtained temperature dependent growth rates are compared with the experimental values. Differential resistivities of semi-insulating lnP grown on substrates of various orientations as a function of temperature are also summarised."