RI 7150 Boron And Boron Carbide By Vapor Deposition

The Bureau of Mines investigated the formation of boron and boron-carbide coatings by vapor-phase reactions. Optimum parameters were determined for hydrogen reduction of boron trichloride and for the fonnation of boron-carbide coatings on graphite by reaction with the depositing boron. At 1,300° C, about 85 percent of the boron was deposited. Tungsten substrates did not react with the boron deposit; other substrates reacted to various extents. The hydrogen reduction of boron tribromide was briefly investigated. Boron carbide was deposited at 1,300° C by adding methane to the boron trichloride-hydrogen feed gas. The chemical composition of the vapor-deposited boron carbide approximated B4C. A method of etching B4C was developed to study its microstructure. When boron was deposited on graphite at 1,500° C, very hard, uniform, strongly adherent coatings of B4C were formed that might be useful in rocket nozzle applications.