Structure and Hydrogen-Absorption Properties of LaNi5 Thin Films Prepared by a Sputtering Method

"The structure and hydrogen-absorption properties of LaNis thin films were investigated in the present study. LaNis thin films were prepared by a sputtering method with a radio-frequency power, Ws, of 50 -400 Wat substrate temperature, Ts, of323 -573 K. Nickel content of the films decreased with increasing Ws, however, there was no dependence on Ts. At low Ws and low Ts, amorphous films were deposited. In other conditions, the films were polycrystalline. The films prepared at high Ws and low Ts, or at low Ws and high Ts, exhibited only a (h k · 0) peak in the X-ray diffraction profiles. This indicates that the c-axis of crystalline films was oriented parallel to the substrate plane. At high Ws and high Ts, the films with columnar structure were obtained. Hydrogen-absorption capacity of the thin films increased with increasing Ws. The pressure plateau did not appear on the pressure-composition isotherms. The films deposited at high Ts represented a higher equilibrium pressure.IntroductionThin films of hydrogen storage alloys can be applied for an electrode of rechargeable battery or fuel cell, a filter for H1 purification and various kind of sensor. Some studies on the preparation of the thin films of LaNi5 intermetallic compound, which is a typical hydrogen storage material, have been done hitherto. Adachi et al. , 2) and Sakaguchi et al. 3) prepared amorphous and crystalline LaNi5 thin films using flash evaporation of alloy powders and measured the pressure-composition isotherm for the prepared film utilizing a quartz crystal mass monitoring (QC:MM) method. It was found that the prepared amorphous film absorbed hydrogen without disintegrating into the powders and the hydrogen-absorption capacity of the films increased with the degree of crystallinity. Sakai et al. 4) reported that the maximum hydrogen storage capacities of amorphous and crystalline LaNi5 thin films, fabricated by a RF sputtering method using combination targets, were about 40 mA h g-1 (LaNisHo.7) and 160 mA h g-1 (LaNi5H2.6), respectively. Uchida et al. 5, 6) prepared LaNi5 thin films using flash evaporation of alloy powders and measured volumetrically the pressure-composition isotherm for the prepared film. It was reported that the hydrogen-absorption capacity of the films changed by the annealing treatment."