Study Of Decomposition Regularities For A Zn-Containing Volatile Complex Used In ZnO Film Synthesis

?2?2 (98 %) vapour passed through a reactor at 25Pa where a Zn? target was placed at 273K- 373?. Experiments were carried out on a flow- type vacuum device. ?2?2 decomposition on Zn? surface accompanied by formation of a Zn-containing volatile complex which transferred to the gas phase, and Zn? deposited on a substrate at condensation. As the substrate, five sequentially located quartz cylinders were used at 293K- 423 K (?n). Decomposition of the Zn-containing complex on quartz substrates carried out as a first- order reaction. ?The complex decomposition constant (??) increased with the substrate temperature (?n=293 K, ??=7.05 sec-1;?n = 373 K, ?? = 87 sec-1;?n = 423 K, ?? =158 sec-1). ?The complex decomposition constant did not practically vary when the target temperature increased; the complex formation rate increased slightly.