Synthesis and Deposition of Silicon Carbide Nanopowders in a Microwaveinduced Plasma Operating at Low to Atmospheric Pressures

"SynopsisSilicon carbide nanopowders were produced using a microwave-induced plasma process operating at 15 kPa absolute and at atmospheric pressure. Methyltrichlorosilane (MTS) served as precursor, due to its advantageous stoichiometric silicon-to-carbon ratio of unity, allowing it to act as both carbon and silicon source. Argon served as carrier gas, and an additional hydrogen feed helped ensure a fully reducing reaction environment. The parameters under investigation were the H2:MTS molar ratio and the total enthalpy. The particle size distribution ranged from 20 nm upwards, as determined by SEM and TEM micrographs. It was found that an increase in enthalpy and a higher H2:MTS ratio resulted in smaller SiC particle sizes. The adhesion of particles was a common occurrence during the process, resulting in larger agglomerate sizes. SiC layers were deposited at 15 kPa with thicknesses ranging from 5.8 to 15 µm.IntroductionIt is well known that methyltrichlorosilane (CH3SiCl3 or MTS) decomposes to form silicon carbide (SiC) and hydrogen chloride (HCl) as shown in Equation [1]. The reaction kinetics and mechanisms for this reaction are thoroughly reported in the literature (Sone et al., 2000; Papasouliotis and Sotirchos, 1999; Kaneko et al., 2002; Wang et al., 2011)."