Technical Notes - Etch Pits and Slip Bands in Silicon

IT was recently shown1 that slip bands can be observed in bent germanium crystals after deformation, by means of etch pits along the slip traces. It is the purpose of this note to show how chemical etch pits can also be usedto examine the appear- ance of slip bands in silicon, as well as other deformation markings. A 30 ohm-cm, p-type single crystal bar, 2x1/4x1/8 in., was plastically bent at approximately 1200°C in a vacuum of 1x10-5 mm Hg. The axis of the crystal was coincident with a <III> direction, and the surface normal to the axis of bending was within 4" of a (110) plane. Prior to the deformation, the (110) surface was mechanically polished with