Technical Notes - Grain Boundary Mobilities in High Purity Silver

GRAIN boundary migration in V-shaped thin specimens of high purity silver was studied. Each specimen contained two crystals having the relative orientation: (111)A/(111)B; (ll0)A/(101)B. The boundary between these two crystals varied between a continuous curved and an alternating two plane interface. The plane interfaces were oriented parallel to (101)A/(011B) and (121)A/(211)B. Traces of these planes are shown in Fig. 1. Evidently the two plane interface, although of higher area, comprises lower total interface energy than the average curved boundary it replaced. The plane boundaries were found to move at 650 °C to consume the broad segment of the V opposite to the direction of interface area and energy decrease. On investigation, using the thermal etching technique of Hendrickson and Machlin,1 it was found that the outer grain contained 8.3x108 more dislocations per cm" than the grain at the apex of the V. Consequently, the boundary moved to decrease the strain energy associated with the difference in dislocation density across the boundary. The rates of motion of specific {110} and {112} boundaries were measured during interrupted anneals at 650°C by referring the position of the boundaries to each other and a fiducial line on the specimen surface. The measured rates of motion are 0.075 and 0.025 mm per hr for the {110} and {112} boundaries, respectively. Plots of grain boundary motion vs time of annealing show straight lines with little deviation of data points from these lines.