Technical Notes - On the Relationship Between Resistivity and Lifetime in Semiconductors

METALLURGISTS engaged in the pulling of single crystals of germanium and silicon, and their zone purification and zone levelling for transistor and diode production, have found that the lifetimes of minority carriers in low resistivity samples tend to be shorter than in high resistivity material, although equal care is taken in the crystal preparation. In other words, it is more difficult to obtain long lifetimes in single crystals of low resistivity semiconductors. It is the purpose of this note to point out that this phenomenon follows directly from the Hall1 and Shockley-Read' theories of lifetimes in semiconductors." In general, the recombination mechanism may be very complicated,' but experiments seem to indicate that the simple formula2 for the lifetime of excess carriers given by n0 + n3 Pn + P1 T = Tpo,------------------+ Tjpu ----------------------- [ 1 ] nu + pn na+ + Pa is a good representation of the situation prevailing in transistor grade semiconductors. In this formula, no and pa are the equilibrium densities of electrons 6+ - E./ET and holes, n1 = N,e is the number of electrons E1- E2/KT in the conduction band, and p1 - N,e is the number of holes in the valence band, both for the case in which the Fermi level falls at the trap level, E1. N,. is the effective density of states in the conduction band; E1, the recombination level; E1, the lower edge of the conduction band; k, Boltzmann's constant; T, absolute temperature; N,., effective density of states in the valence band; and E,., the upper edge of the valence band. t,.,, denotes the lifetime of holes injected into highly n-type material, and The indicates the lifetime of electrons injected into highly p-type material. Eq. 1 holds for nondegenerate semiconductors in which only one recombination level is active and the charge in the recombination centers is neglected. It is further assumed that the number of injected ex-