The Semiconductor Mechanism of Dissolution and the Pseudo-Passivation of Chalcopyrite

The dissolution of chalcopyrite has received a significant amount of attention. The predominant paradigm of investigation is that its rate of dissolution is limited or passivated by a surface coating or film of material. The common candidates for such a passivating coating are numerous: polysulfide coating, metal deficient layers, copper sulfide coating, bornite layers, jarosite precipitates, and elemental sulfur films. While this line of explanation, that is, the explanation based on passivation, seems to have won some form of consensus with researchers, there is another explanation for the results that can account for all the results observed. Crundwell (1988) proposed that the solid state properties of chalcopyrite, in particular, the semiconducting properties, are responsible for the observed behaviour of chalcopyrite. The purpose of this paper is to outline the semiconductor mechanism of dissolution, and to show how this mechanism accounts for all the observed phenomena recently reported in the literature. The paper outlines the semiconductor mechanism of dissolution, shows how this mechanism accounts for the dissolution