Uranium Compounds as Thermoelectric Materials

The properties required for a com-pound to form useful thermoelectric materials are described. Uranium compounds which might have these properties are reviewed. Several of these compounds have been prepared and fabricated into compacts. The apparatus used for hot pressing, and for the measurement of thermoelectric power, electrical conductivity and thermal conductivity, is described. Detailed attention has been given to the properties of the nitrides. Preliminary studies on a number of other uranium compounds are reported. The figures of merit of the best materials so far examined are one-tenth of those necessary for a useful thermo-electric material. THE efficiency of thermoelectric materials for power generation and cooling is determined by their figure of merit, Z = a2 a/K, where a, a and K are thermoelectric power, electrical conductivity and thermal conductivity, respectively. It is well known that the largest values of Z are achieved with semiconductors (1). High mobility of charge carriers is necessary for simultaneously high thermoelectric power and electrical conductivity.The properties required for a com-pound to form useful thermoelectric materials are described. Uranium compounds which might have these properties are reviewed. Several of these compounds have been prepared and fabricated into compacts. The apparatus used for hot pressing, and for the measurement of thermoelectric power, electrical conductivity and thermal conductivity, is described. Detailed attention has been given to the properties of the nitrides. Preliminary studies on a number of other uranium compounds are reported. The figures of merit of the best materials so far examined are one-tenth of those necessary for a useful thermo-electric material. THE efficiency of thermoelectric materials for power generation and cooling is determined by their figure of merit, Z = a2 a/K, where a, a and K are thermoelectric power, electrical conductivity and thermal conductivity, respectively. It is well known that the largest values of Z are achieved with semiconductors (1). High mobility of charge carriers is necessary for simultaneously high thermoelectric power and electrical conductivity.