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By Robert E. Green, T. Hinton

The velocities of the three possible modes of elastic-wave Propagation have been calculated for single-crystal aluminum at 1-deg intervals throughout the standard steveographic triangle. The results are presented as isospeed contours. The deviations between the direction of maximum energy propagation and specirzen axes are presented as arrows drawn within the standard triangle. The orientation factors associated with dislocation nzotion on the primary slip system only and also on all twelve slip systenzs have been calculated for all three elastic waves. The orientation factors associated with a longitudinal standing--7aue resonant specivnen hazle also been calculated. The relevance of these results to ultrasonic attenuation measurements is discussed. DUE to the widespread use of ultrasonics in the investigation of the properties of solids a number of authors15 have discussed in detail the theory of elastic-wave propagation in solids. In this paper the modes of wave propagation are evaluated according to the procedure suggested by reeen' for the case of single-crystal aluminum at 1-deg intervals throughout the standard stereographic triangle. The wave speeds are presented in the form of contour diagrams within the standard triangle. The deviations between the direction of maximum energy propagation and the normals to the wave fronts are presented as arrows drawn within the standard triangle. The orientation-de pendent factors (orientation factors) associated with dislocation damping as derived in the preceding paper6 have been calculated for the case of aluminum at 1-deg intervals throughout the standard triangle. The orientation factors for dislocation motion on the primary slip system only and on all twelve slip systems are presented in the form of contour diagrams, for both the traveling- and the standing-wave conditions. The relevance of these results to ultrasonic attenuation measurements is discussed. ELASTIC-WAVE PROPAGATION Three waves can be propagated in a linear elastic homogeneous anisotropic medium. The velocity of propagation v of each of these waves in a medium of density p can be obtained from the determination of the eigenvalues and eigenvectors of the matrix equa- The A's are a series of moduli which are functions of the elastic constants cij and the direction cosines 1, m, and n of the specimen axis. In the case of cubic single crystals where there are only three nonzero elastic constants cll, c12, and C, the A's are, The solution of Eq. [I] will give the wave speeds (eigenvalues) and the direction cosines a, 0, and y of the particle displacements (eigenvectors). To obtain the direction of maximum energy flux requires the calculation of the energy-flux vector ET with com- w is the angular frequency, A, the amplitude, and v the velocity of the wave. The direction cosines a, b, and c of the energy flux vector are then given by

Jan 1, 1967

By R. E. Coleman

Infrared spectroscopy, employing the internal reflection method in conjunction with solvent extraction techniques, was used to study surface reactions between aqueous potassium ethyl xanthate and both sphalerite and precipitated zinc sulfide each activated with aqueous copper sulfate. It was determined that reactions occurring on the sphalerite and zinc sulfide surfaces produce the reaction products ethyl dixanthogen and cuprous ethyl xanthate, some of which are ad¬sorbed on the mineral surfaces. According to infrared spectra showing the reaction to form these compounds, the ratio of cuprous ethyl xanthate to ethyl dixanthogen adsorbed is directly related to pH of the flotation solution.

Jan 1, 1967

By Wendell S. Williams

Single crystals of TIC doped with boron at high temperat~ires develop second-phase inclusions. The inclusions are in the form of lamellae lying parallel to {l 11 } planes of the Tic matrix and can be vevealed by etching [100] cleavage faces of the boron-doped Tic crystals. measurements of the critical resolved shear stress. t, of TIC crystals containing such inclusions showed that the ropid drop in t wilh increasing temperatu.ve found for pure Tic was greatly reduced. At 1600°C, the inclusion containing crystals had a value of t five limes that of pure Tic. The hardening effect also was found to inhibit hot pressing of TiC powders containing boron impurity. Thermochemical and crys-tallographic arguments suggest that the inclusions are TiB2. The boron content of the hardened carbide is a few tenths of 1 pct. TITANIUM carbide is noted for its high room-temperature hardness. However, measurements of the critical resolved shear stress, T, of single crystals of Tic at high temperatures have shown that t decreases exponentially with increasing temperature.' This temperature dependence of t is attributed to thermally activated dislocation mobility limited by a large Peierls stress.' In turn, this large Peierls stress is believed to be a consequence of strong co-valent and ionic binding in Tic. The rapid drop in 7 with increasing temperature, characteristic of pure Tic, is lessened by the introduction of second-phase inclusions. Exposure of Tic to boron at high temperatures produces such inclusions. A report of the influence of boron on t in Tic is presented, followed by a discussion of the nature and formation of boron-containing inclusions in Tic which are believed to be responsible for the hardening effect. I) CRITICAL RESOLVED SHEAR STRESS OF BORON-DOPED Tic CRYSTALS Tic single crystal boules grown by Union Carbide Corp., Linde Division, were doped with boron by placing them in a carbon crucible packed with boron powder and heating in a vacuum furnace to 2000°C for 1 hr. Samples 1 by 1 by 3 mm were cleaved from these doped boules. High-temperature compression tests' were made on these samples to determine the critical resolved shear stress as a function of temperature . The rapid drop in critical resolved shear stress found for pure Tic crystals' did not occur: tests indicated that the boron-doped crystals at 1600°C had values of T equal to those of pure Tic crystals heated to only 1100°C, Fig. 1. No difference in the shape of the individual stress-strain curves was produced by the boron doping, but the stress scale was multiplied by a large factor. The hardening effect of boron in Tic probably extends to temperatures lower than those used in the present work (1100°C minimum). At room temperature, however, the influence of boron is difficult to determine because the stress required for gross plastic flow in pure Tic is SO high that in practice fracture cccurs first. Microhardness is the only test that can give an indication of the yield stress in Tic at room temperature. such measurements were made5 on boron-doped Tic; the matrix had a hardness value

Jan 1, 1967

Vatukoula is a gold mining township situated at the south-west periphery of a Tertiary caldera which measures 3 miles by 4 miles. Erosion of the caldera resulted in the formation of a topographic depression, called the Tavua basin, covering about 30 square miles. This area, also known as the Tavua Goldfield, has been the site for spasmodic prospecting since the initial discovery of gold in 1932.The mineralization at Vatukoula is typically epithermal with the gold occurring as tellurides, auriferous sulphides, and to a much less extent as native gold. The lodes are confined to three major structures i.e. north-west shears, flatly dipping structures (flat makes), and local shatter orebodies.Within these structures, at least five types of controls are recognized to account for the localization of the oreshoots. The dominant control is structure.The lode structures are related to the overall structural pattern of the Tavua basin. This pattern, which is controlled by the collapse planes of the caldera and a north-west shear system, produced a "shatter block" atVatukoula and elsewhere around the caldera.Structural analysis indicates there are certain areas in the Tavua basin where exploration could be rewarded by the discovery of orebodies with similar controls to those of the productive Vatukoula block.

Jan 1, 1967

By K. Mukai, M. Ishihara

This report is a brief discussion of the impurity levels both in primary aluminum and super-purily alnminim in connection with raw materials and proc-essing methods. Particularly, truce amounls of im-purities were analyzed by introducing nittss-speclro-gruphy and nenlron-aclivalian analysis techniques. Vanadium and gallium content in primary aluminum metal corresponded to theor amounls in anode coke. but the nickel content in primary aluminum was hide-pendent oj its amount in the anode cake. Sulfur in the anode colic might result in an increase of the iron content in the molten metal in the reduction cell. The content of sodium and calcium increased with increasing bath ratio. In the holding furnacc sodium content decreased rapidly, and nonmetallic inclusions merit separated front the mollen metal. Three-layer elctrolysis was effectire in eliminating many impuri-ties with the exception of copper, aluminum oxide. aluminum nitride, and some rare-earth elements. THE amount of impurities and nonmetallic inclusions in aluminum metal depends on impurities in the raw materials and various production processes. This paper presents an investigation of the behavior of impurities and nonmetallic inclusions in aluminum during the electrolysis process, the period in the holding furnace, and the process of three-layer electrolysis. Chemical analysis and emission spectrometric analysis have generally been used as methods to determine small amounts of impurities in both primary aluminum and super-purity aluminum; however. mass spectrography and neutron-activation analysis have been recently introduced into this field, and trace amounts of impurities can accurately be determined by these latter methods. EXPERIMENTAL WORK Common impurities were determined by means of absorptiometric. polarographic, flame-photometric. and emission-spectrometric methods. However, in the determination of trace amounts of impurities and non-metallic inclusions, the following methods were applied. In the analyses of trace impurities by mass-spec- trographic analysis, samples were exposed in the vacuum spark of double-focus ing Mattauch-Herzog type mass spectrograph (Japan Electron Optics Laboratory, Ltd.). Ilford Q2 photographic plates were used as ion detectors. Fe was used as the internal standard, and the atomic concentration of each element was calculated by the following expression and converted into the weight concentration: where E, and Ei are the exposures (coulomb) when isotopes of the internal standard and impurity elements (on which the estimate is based) show the same density, X is the percent (atomic) concentration of the standard, IF and Ii are the percent abundances of the isotopes of the standard the impurity elements (on which the estimate is based), and Ms and hfi are the mass of the isotopes of the standard and impurity elements (on which the estimate is based). The coefficient of variation in this method is about 40 pct in the range of 0.1 to 1 ppm. In neutron-activation analysis, irradiations were done in the nuclear reactors TRIGA-I1 (neutron flux: 4.7 x 10 11 n per sq cm per sec; Rikkyo University) or JRR-2 (neutron flux: 2 x 1013 n per sq cm per sec: Japan Atomic Energy Research Institute). After the chemical separation, a NaI (3 by 3 in.) scintillator connected to a 256-channel y-ray spectrometer (R.C.L.) was used for counting and recording various activated impurities. The coefficient of variation in this method is about 20 pct. In the analyses of nonmetallic inclusions, aluminum-oxide determination was carried out according to Fischer's method, 3 as follows. A slice of sample was cut off and the surface was cleaned. It was dissolved in bromine-methanol. The solution was filtered and the residue was washed. The residue was fused with potassium bisulfate flux. Then it was dissolved in weak acid, and oxine solution was added. The aluminum oxinate was extracted with benzene. Finally, aluminum was determined absorptio-metrically. Aluminum nitride determination was carried out as follows. A slice of sample was cut off and the surface was cleaned. It was put in the distillation apparatus and decomposed with sodium hydroxide solution. The solution was distilled. Then ammonia was absorbed and

Jan 1, 1967

By J. A. Herbst, G. E. Agar

Beginning with the second paragraph in the second column of page 148, this paper should read: The Reynolds number in Fig. 6 was calculated from the inlet diam and it is evident from the graph that above NR = 5000 the value of K2 is as it should be, a constant. The data10 shown in Fig. 7 was obtained for fluids flowing in pipes of diam D with sharp edged orifices of diam d. To be consistent with the representation in Fig. 6 the Reynolds number was calculated with the orifice diam d. These two sets of data show similar patterns and the variation in the orifice coefficient C is believed to account for the variability of the cyclone coefficient K2. The values of C given in Table IV are derived from K2 by conversion of units. C more nearly represents an equivalent orifice coefficient for a cyclone. Armstrong1' showed that data reported by Chaston 12 and Elcox13 yielded values for C of 0.24 and 0.27, re- spectively, Dahlstrom's4 data gives a value of 0.22. As a consequence of the variability of the cyclone coefficient some caution must be exercised in substituting for Q in the split size equation.

Jan 1, 1967

By William F. List, Marvin A. Schuster

Monolithic electrooptical mosaics of 2500 photo-transistor elements with internal row and surface column interconnections have been fabricated by epitaxial-planar diffsion techniques. Unique access to any elemed of the mosaic is provided through one of the fifty X and one of the fifty Y external leads. The sensor mosaic can be used for imaging applications and has a 1:1 aspect ratio, a resolution of 100 lines per in., a dynamic range in excess of lo3, a sensitivity of 0.5 per pw, element response within a 2:l range over 75 pct of the mosaic, and a minimum detectable signal of the order of 10-' w. Design considerations which ilnpose particclar fabrication yequirements are disctussed along with some of the problems peculiar to the epitaxial and planar-dijfision techniqes by which this device is fabricated. The solid-state silicon monolith has an imaging area of 0.5 by 0.5 in. and an element center -to- center spacing of 0.010 in. J monolithic solid-state electrooptical device has been developed as the photon-sensing mosaic for use in an image-converter system.' This system is the solid-state equivalent of the vidicon and can image radiation in the visible and near-infrared regions of the spectrum. The electrooptical image converter has the desirable size, weight, reliability, and low-power characteristics inherent in solid-state devices. It is read out by direct-wire means rather than by beam-scan techniques. The packaged unit is shown in Fig. 1. A selection of material for the sensor was based on considerations of both reliable fabrication techniques and material spectral response. Silicon was selected both for its response from the lower end of :he visible to the long-wavelength cut-off above 11,000A and for its well-developed epitaxial planar-diffused technology. The electrical image is composed of M x N discrete information bits with each bit emanating from one of the individual phototransistor sensors. The interconnected mosaic concept was introduced to provide a structure which is both manageable in its number of leads and compatible with conventional viewing systems which accept XY data. Interconnections along the Y direction are provided by internally diffused strips, while interconnections along the X direction are formed by vacuum-deposited metal surface bars. Unique access to any individual element of the M x N mosaic is available through one of the M and one of the N external leads. PHOTOTRANSISTOR DESIGN A phototransistor structure2 was selected for the discrete photon detectors of which the mosaic is com- posed. Basically, the mode of phototransistor operation is such that incident quanta are absorbed in the base area of the element where they generate electron-hole pairs. If the electrons are liberated within a diffusion length of the depletion region around the collector junction, they will diffuse to this depletion region and be swept across the junction where they account for a small component of the photocurrent. Similarly, the holes which are created within a diffusion length of the emitter junction will diffuse to this region where they forward bias the emitter and so induce injection of minority carriers into the base. This accounts for the substantial transistor photocurrent. This mechanism of operation implies several design and fabrication goals for the individual sensor elements: high electrooptical conversion efficiency, sufficient carrier lifetime in the base regions, and a maximum volume in which photons can be absorbed within a diffusion length from the depletion layer about the junction. Moderately high transistor gain is desirable to permit readout at low light levels; however, very high gain has a deleterious effect on mosaic dynamic range. The mosaic must also be characterized by good uniformity of element response as well as by good isolation between elements. The above set of conditions imply that junction depths must be optimized with respect to photon ab-

Jan 1, 1967

By Narendrakumar A. Chevli

Exploratory work was conducted in the fabrication of integrated circuitry, specifically linear amplifier circuits, by three general methods: 1) monolithic diffused silicon; 2) a combination of metal thin-film and monolithic diffused silicon; and 3) a hybrid of metal films and diffused silicon on an alunina substrate. In these linear amplifier integrated circuits the followzng conditions were desired: very high-frequency response, high voltage gain, and good thermal tracking stability of electrical characteristics. The resulting circuit designs imposed problems of isolation between elements, layout and smallness of size of active elements, and close tolerances on electrzcal characteristics of the passive elements. Interconnection problems for specific designs resulted from the small dimensions involved and the topography of the hybrid fabrication techniques. The desired integrated-circuit characteristics were achieved with the technologies of categories 2 and 3 above. Solutions to the problems imposed by these characteristics lay in the ability to isolate czrcuit elements of small size while providing a layout designed to minimize element-to-element variations. Sufficient freedom in the formation of passive elements was achieved by uniting the metal film and the monolithic silicon technologies. The most satisfactory designs were based on the beam-lead interconnection and isolation technique. SINCE the advent of integrated circuits, major emphasis has been on fabricating digital integrated circuits. Linear circuits require high performance, high voltage, and tighter tolerance components which are not always compatible with the capability of process technology available for fabrication of these circuits into integrated form. Fortunately the growth of newer and improved processes and materials for fabricating integrated circuits has been an accelerated one. This has now made possible the translation of stringent performance requirements of the linear circuits into microminiature integrated circuits of the same performance. In the exploratory work of fabricating high-performance Linear Integrated Circuits—LIC, the following objectives were formulated: i) fabrication of high-frequency transistors such as the type 2N918 isolated on a single silicon substrate; ii) fabrication of medium-frequency transistors having a very high gain at low collector currents such as the types 2N930/2N2484 isolated on a single substrate ; iii) fabrication of tight-tolerance, high-valued resistors having low temperature coefficients of resistance and stable thermal tracking characteristics, these resistors to be fabricated on an active or passive substrate; iv) simultaneous fabrication of complementary transistors—pn and pnp-on the same silicon substrate; v) fabrication of newer active elements such as MOS, FET transistors along with the conventional active and passive elements on the same silicon substrate. State-of-the-art assessment f all the available processes, materials, and technology to meet above objectives indicated that economic fabrication of LIC cannot be achieved by a single technology for all types of linear circuits. Where design and performance of a given linear circuit can be modified and tolerated to the extent of a particular technology, then alone is it possible to fabricate a LIC using a single process technology such as all diffused, planar technology. In order to evaluate this economic breakpoint with design and performance compromise in fabricating LIC, it is essential that a thorough understanding be obtained of techniques, potentials, and limitations of all the various process technology and materials

Jan 1, 1967

By M. Khorouzan, L. Thomas

Designers of semiconductor devices have been strivi,ng to resolve problems associated with Au-A1 alloys in bonded in.tercomzeclions. One approach now being- used is that of waintaining a physical seyav-atioz between the two metals in bond areas. This is accolrzplished by alunzincnz-plating a bonding area on the tips oJ the kovar leads and using alcminurn wires to join the senzicondictor device to the leads. The portion of the kovar lead which is on the externul side of the sealed package is gold-plated to provide an oxide-free surface for soldering or welding. A discoloration condition originally thought to be sinilar to purple plague, occuving in the yluled uluninur bonding area after package sealing, has been investigated to determine its efiects ipm bond integrity. Electron-micro-probe analysis determined that no1 only gold, but lead, zinc, and silicon were also present in the discolored area. A series of samples conlaining' conkrolled umonts of these inzpitrities weve prepared and subjected to a sil.zuluted sealing process. The investigations swcued that, of the contawiinants, only zinc toas detrinenlul to Lhe bond integily. The discoloration condition itself was found not to be detrimental to the bond integrity. DESIGNERS of semiconductor devices have been striving to resolve problems associated with Au-A1 alloys in bonded interconnections. One approach now being used is that of maintaining a physical separation between the two metals in bond areas. This is accomplished by aluminum plating a bonding area on the tips of the kovar leads and using aluminum wires to join the semiconductor device to the kovar leads. The portion of the kovar lead which is on the external side of the sealed package is gold-plated to provide an oxide-free surface for soldering or welding. Contamination as evidenced by discoloration of the aluminum-plated area was observed in a number of integrated circuits undergoing examination for defect characteristics which cause electrical failures.' This paper contains the results of an investigation to determine the nature of this discoloration, its cause, and its effect upon the integrity of the interconnection bond. I) THE NATURE AND EXTENT OF ALUMINUM-BOND CONTAMINATION The initial hypothesis in the investigation was that the discoloration was caused by reaction of the aluminum film with some unknown contaminants during the sealing of the hermetically sealed integrated-circuit flat package. The package is a rectangular ceramic container sealed with glass which surrounds the kovar leads as well as joining the top to the bottom. The seal is made hermetic by heating and cooling the package to devitrify the glass. In the case of the packages under investigation, the hermetic sealing had been accomplished with dry air as internal atmosphere. The apparent effect of contaminations as observed by microscopic examination was the formation of surface oxides having variations in color encompassing the whole spectrum of visible light. The contamination appeared to be related to one of the more notorious examples of these colorations, the so called purple plague.' In addition to purple plague, Fig. 1 shows the tarnish in the luster of the aluminized surface in the bond area which had been observed in many of the integrated circuits. To identify the contaminant in the bond area electron-probe microanalysis techniques were used.3 Fig. 2 shows the result of this analysis. The contaminants identified were gold, aluminum, zinc, lead, silicon, and cobalt. Fig. 2(a) is a back-scatter display of the area under study. The back-scattered electrons provide a general indication of the distribution of elements in the specimen surface. Elements with higher atomic number scatter more electrons back from the surface and are seen as light areas in the picture. The sample current, Fig. 2(b), is the amount of current conducted by the specimen as a result of electron-beam striking it and is an indication of element distribution. The Sample current is the reverse of back-scatter and complements it. Other pictures in Fig. 2 are produced by characteristic X-rays generated by the elements, allowing the isolation of the element of interest. The isolated element appears white and all other elements are dark. In this manner a comparative study provides a correlation between different surface areas and the elements which are in these areas. The area covered by the gold film, Fig. 2(c), shows that the boundary between the gold film and the kovar is not sharp as expected and that some sort of diffusion has taken place. Fig. 2(c) shows that some gold particles have been carried to the bond area and are in the proximity of the bonded wire in spite of the presence of a physical barrier in the form of the un-

Jan 1, 1967

By C. S. Matthews, J. L. Mahaffey, W. M. Rutherford

This paper gives results of an experimental study of the sweep efficiency of a miscible displacement in a five-spot. The study was carried out in a parallel-plate glass model in which effects of diffusion were scaled at or near the molecular diffusion level. The experiments show that very early breakthrough (25 to 35 per cent of pore volume (PV) injected) may be expected in miscible floods because of the unfavorable viscosity ratio. However after 1 PV of displacing fluid is injected, the sweep rises to a reasonable value (50 to 60 per cent). Photographs show that small slugs of less than 10 per cent of PV tend to dissipate before breakthrough. A minimum slug size of 15 per cent of PV would appear to be necessary even in a relatively homogeneous formation. Presence of a slug whose viscosity is inter-mediate between that of oil and gas increases the sweep efficiency of the oil-gas system. In a typical system the sweep at breakthrough rose from 26 to 37 per cent of PV for a 25 per cent slug. The increase in sweep brought about by use of a large slug could well pay for the extra deferment cost of the additional slug material. INTRODUCTION Most miscible displacement processes involve the displacement of oil with fluids of much lower viscosity and density. The displacement process at these adverse viscosity and density ratios is dominated by instability phenomena, i.e., viscous fingers and gravity tongues. These phenomena have highly adverse effects on oil recovery. Although a number of laboratory studies have been made to determine the effect of adverse viscosity ratios on five-spot sweep patterns,l,2 the scaling of diffusion effects is uncertain. In the series of scaled model studies reported herein, an attempt was made to scale diffusion. Model studies of miscible displacements in which molecular diffusion predominates are per-mitted by controlling the parallel plate spacing which reduces convective mixing to arbitrarily small levels. To decide how this scaling relates to any particular Geld displacement necessitates an estimation of diffusion effects for the natural rock being considered and conditions under which displacement will be conducted. The approach normally taken is to extrapolate data obtained from stable miscible displacements performed in the laboratory, such as those presented by Brigham et al.3 The validity with which such an extrapolation can be applied to an unstable flow system has yet to be established. If this approach is accepted, a family of oil recovery curves can be generated for a single viscosity ratio based on Brigham's observation that the magnitude of the dispersion coefficient is dependent, among other things, upon specific rock properties. Objective of our test was to define the lower limit of this range by presenting the case where dispersion effects were reduced to the molecular diffusion level in both the transverse and longitudinal directions.

Jan 1, 1967

By A. W. Deurbrouck

This Bureau of Mines report describes the preparation characteristics of the significant coalbeds from which samples could be obtained in Upshur County, W. Va. One of the 14 samples collected was of metallurgical quality as received, 6 could be sufficiently upgraded to provide acceptable products, and 7 could not be upgraded to metallurgical quality because of their high sulfur contents.

Jan 1, 1967

By Fred Witt, Milton Schwartz

ESTABLISHED methods for obtaining quantitative pole figures for flat sheets1"5 can be extended to apply to thin films on a substrate. The mode of scanning the sample is exactly the same as described in the references? but consideration is given to the fact that the scattered X-ray intensities are due to both the thin film and its substrate with appropriate attenuation factors. The purpose of this paper is to describe a method to obtain the scattered intensities from the film alone for subsequent pole-figure determinations. Fig. 1 shows the four possible general positions of the film (f) and its substrate (s) with respect to the incident X-ray beam (I,). In this paper it will be assumed that the plane of the sample is normal to the plane of the diffractometer. In the diagrams the line jV is the normal to the flat sample and the line P is the trace of the diffracting crystallographic planes in the plane of the diffractometer. The angle of tilt, a, is the positive acute angle measured from the line N to the line P; if this angle is measured clockwise then a is said to be in the positive a region; if this angle is measured counterclockwise then a is said to be in the negative a region. For the reflection cases, the total scattered intensity, at the proper Bragg angle for a particular set of planes, is due to that scattered by the film Vf) and that scattered by the substrate. The beam incident on

Jan 1, 1967

By J. D. Embury, R. M. Fisher, A. S. Keh

An investigation of the defect structure and properties following large strain deformation has been carried out using transmission electron microscopy and mechanical testing for a range of ferrous materials and for copper. It is shown that, for a variety of ferrous materials, a cellular substructure is developed during the initial stages of working and on further deformation the dimensions of this substructure are reduced. Quantitative measurements of the flow stress and the scale of the substructure indicate that the strength of heavily worked materials is largely determined by the spacing of cell walls. These cell walls act as dislocation barriers in a manner analogous to grain boundaries. FCC materials do not harden as extensively as bcc after cold working and the present observations on copper indicate that the dimensions of the substructure in fcc materials are not markedly reduced on deformation. The differences between the fcc and bcc structures produced by large plastic strains are ascribed to differences in the extent of dynamic recovery. It is tentatively proposed that the greater stability of substructural barriers in bcc structures results from strong interstitial Pinning effects. It is proposed that for large plastic strains the work-hardening process may be considered in terms of the reduction of substructural-barrier spacing during the working process. This pvovides a simplified hut useful analysis of the strain hardening occurring during mechanical processes. THE mechanisms of strain-hardening processes have occupied the attention of numerous investigators over the past three decades and a multitude of theories have emerged in this field. The majority of previous work has been concerned with the development of a description of the plastic behavior of single crystals in terms of dislocation theory.'" In contrast, scant attention has been given to the strengthening mechanisms operative during mechanical working processes such as rolling and drawing. The large plastic strains involved in these processes make it difficult to correlate the observations with any elementary dislocation theory. Further, as Bullen and coworkers3 have opined, for large plastic strains both hardening and recovery occur simultaneously and thus it is extremely difficult to estimate the effect of plastic strain on the ambient internal stress field. It is probable that for large plas- tic strains any theoretical estimate of the internal stress field must be made in terms of complex dislocation groups. Although some valuable theoretical work has been done toward calculating the elastic properties of dislocation groups4 any detailed self-consistent model for large plastic strain is as yet impossible. With these limitations in view it is still of value to examine the mechanical properties of highly strained materials as a function of their substructure. This relationship is explored in the present communication for a variety of materials subjected to rolling, drawing, or swaging. The primary object of this investigation has been to establish the validity and the limitations of the substructural strengthening mechanism proposed by Embury and eisher' for drawn pearlitic wire and by Meieran and Thomas for drawn tungsten wire. No attempt has been made to delineate the basic interaction mechanism which occurs between a slip dislocation and the substructure and the authors believe that a great deal more experimental evidence must be compiled before these fundamental aspects can be explored. Also, no specific attention has been given to the detailed formation of substructure during working. Experimental Details. A variety of materials were used in this investigation, the compositions and heat treatment of which are tabulated in Table I. The commercially pure iron is referred to throughout this report as Ferrovac E. The mechanical working processes were all performed at room temperature. The wire drawing was performed on a manual drawing bench. Reductions of between 10 and 20 pct in area per pass were used in both swaging and drawing. The experimental parameter used to evaluate the mechanical properties of the materials was the 0.2 pct proof stress. This was determined for wire samples using an Instron tensile machine at a crosshead speed of 0.02 in. per min. The techniques for preparation of samples for transmission electron microscopy have been described previo~sl~.~ Specimens from wire samples were prepared from longitudinal sections and in some cases from transverse sections. To evaluate the substructural characteristics of rolled materials, thin foil samples were prepared of both the face and edge sections. Results. One of the more familiar ways of expressing work hardening in mechanical working is by the flow stress as a function of reduction in cross-sectional area. Fig. 1 shows such a plot for Ferrovac E eutectoid carbon steel and for copper. The curve for Ferrovac E is characterized by an initial stage of rapid work hardening and a final stage of rapid work hardening separated by an intermediate stage with a low rate of work hardening. This behavior is typical of many ferrous materials and the drawn pearlite wire previously investigated by Embury and Fisher is a more pronounced example. Copper shows an initial

Jan 1, 1967

By D. K. Deardorff

The purpose of this work was to investigate the hafnium-carbon phase diagram. Alloys used to study this system were prepared from high-purity components by both consumable-and nonconsumable-electrode arc melting. Data for the diagram were obtained on the alloys by metallography, optical pyrometry, thermal analysis, heat treatment, and X-ray diffraction. The data indicate that a carbide compound occurs over considerable range of composition, and that one of each of the following types of reactions occurs in the hafnium-carbon system: Peritectoid, peritectic, and eutectic. The maximum melting temperature of hafnium carbide is 3,840° C at 49 to 50 atomic percent carbon, and the composition range of hafnium carbide at temperatures of 2,150° to 2,380° C is from 37.0 to 48.5 atomic percent carbon. The hafnium a-S transformation temperature is raised on alloying with carbon from 1,750° to 1,890° C, where a peritectoid reaction isotherm occurs. Alloying hafnium with carbon increases the hafnium melting temperature from 2,190° to 2,250° C, at which temperature a peritectic reaction occurs. Hafnium carbide and carbon react at 3,055° C to form a eutectic of 68.3 atomic percent carbon.

Jan 1, 1967

By W. E. Anable

The Bureau of Mines studied the purification of commercially available vanadium in the 100-kw electron-beam furnace. Purification studies were conducted on a 100-gram button scale by melting and holding the liquid vanadium at temperatures ranging from 2,060° to 2,080° C at pressure of 5(10)-5 torr for periods ranging from 5 to 20 minutes. The effect of doping vanadium with carbon and metallic additions was determined. This study demonstrated that hydrogen was readily removed to 3 ppm or less, oxygen and carbon were reduced to less than 100 ppm each, and the metallic impurities were reduced Co the range of 10 to 500 ppm. The nitrogen content was not reduced in any of the buttons; rather, the nitrogen concentration generally increased as samples were held for successively longer periods. Oxygen was removed much faster and more completely when vanadium was doped with small carbon additions or one of several dopes prior to melting.

Jan 1, 1967

By R. H. Merrill, D. W. Wisecarver

The paper "Design of Surface and Near-Surface Construction in Rock" by Deere, Hendron, Jr., Patton, and Cording discloses a principal difference between civil and mining engineering as applied to openings in rock. Generally, the civil engineer considers an opening as an asset, where a mining engineer finds that most of his openings are a liability. The openings, or rock surfaces, treated in the paper by Deere and coauthors are designed for lasting stability and the foundations for dams, the diversion tunnels, abutments, and surface excavations are expected to be stable for long periods or provide continuous access and other useful purposes. Except for those openings used for the transportation of men, materials, ore, and for ventilation, the mining engineer finds that his underground openings serve no useful purpose once the mineralized rock has been removed. Usually, these openings create problems such as reduced ventilation efficiency, added requirements for scaling, sealing, and other tasks necessary to maintain or isolate the openings. The surface openings and mine plants present another liability to the mining engineer. After the product has been removed from the earth, the abandoned pits or strips, tailing ponds, dumps, and buildings sometimes become hazardous, unsightly, or occupy surface areas that could be used for other purposes. As a general rule, the various disciplines involved in rock mechanics have different objectives and uses for openings; however, the basic concepts regarding the design or control of openings in rock are similar for each discipline. The review by Deere and his coauthors contains examples of the duplications in this technology, and, in particular, the common approaches used by civil and mining engineers. Therefore, both the review paper and this report consider the problems that are common to most of

Jan 1, 1967

By G. L. Fisher, R. Maddin

The rate of self-diffusion in silver single crystals during torsional strain was measured over a wide range of tenperatures and strain rates. The torsional strain was applied in a cyclic manner by reversing the divection of twist aftev a certain fraction of the total strain was reached. Surface roughening was substantially reduced in cyclically strained specimens compared with those strained entirely in one direction. Diffusion coefficients were determined using a special sectioning technique whereby slices could be removed parallel to the surface of a strained torsion specimen. The accuracy of the technique was first determined using roughened specinzens statically diffused to various penetration depths. Simultaneous strain-diffusion experiments were then performed over the temperature range 550' to 800 using strain rates of lo-' to 2.2 x 10' sec-'. The increase in silver self-diffusivity during torsional plastic strain was small. In only one case was the enhancement greater than twice the static value of the diffusion coefficzent. The enhancements increased slightly with decreasing tenzperature and increased with increasing strain rate. A dislocation pipe mechanism of enhancement was found to explain the present results satisfactorily. The magnitude of the enhancements and the tenzperatures at which they were observed suggests that a steady-state dislocation density of 10' to 109 dislocations cm-2 existed during the high-tempevature deformation. The diffusion coefficient in an fcc metal can be increased by 1) an excess concentration of point defects and 2) the rapid movement of diffusing atoms along grain boundaries and dislocations. Plastic deformation may be responsible for enhancements by both of these mechanisms. The results of simultaneous strain-diffusion experiments have caused a controversy over the magnitude of the effect of strain upon diffusion. Experiments reporting large enhancements have been criticized for the manner in which the diffusion coefficient was measured. Several of these experiments have been contradicted by other results obtained in a similar manner. No enhancement was reported by two investigators''' who performed their experiments at high temperatures where strain is expected to have little effect upon diffusion. A recent theoretical analysis3 indicates that strain enhancement by a vacancy mechanism will be small and exist only at low temperatures and rapid strain rates. It is doubtful whether any experiment has yet proven that strain enhancements can occur by an excess vacancy mechanism. In the present research, experiments were performed at extremes of temperature and strain rate in an attempt to measure enhancement of diffusion by strain. Self-diffusion of silver during torsional deformation was chosen since two separate investigations4j5 indicate that at least a small enhancement exists under these conditions. An accurate method of determining the diffusion coefficient, mechanical sectioning, was employed after a technique was devised to apply it to the roughened surface of a strained torsion specimen. First, the accuracy of the technique was determined for different penetrations (2fi). Then diffusion experiments were performed at temperatures between 550" and 800°C at strain rates of 10"" to 10"" per sec. I) EXPERIMENTAL PROCEDURE Preparation of Specimens. The experimental procedure detailing the growth of crystals, their treatment, and the annealing techniques during straining are contained in earlier publications.496 The dimensions and orientations of the torsion specimens are shown in Figs. 1 and 2. licatiin of Torsional Strain. The torsion procedure was changed from that used previously. The specimens were strained in cycles to reduce the gross distortion and surface roughening inherent in twisting to high strains in one direction. For all strains above 0.30, the total surface strain was obtained as follows: the specimen was twisted to 0.10 strain in a clockwise direction; the direction was reversed; the backlash in the torsion apparatus was taken up; and the specimen was twisted in a counterclockwise direction through the initial starting point to 0.20 surface shear strain in the opposite direction. The strain reversal took no more than 1 min to accomplish. The total accumulated surface shear strain was arbitrarily taken as the sum of the 0.10 strain in the clockwise direction plus 0.20 in the counterclockwise direction. Although cyclic torsional strain was beneficial, surface roughening and specimen distortion were not entirely eliminated. The variation in the diameter at various points on the specimen was often much greater than the depth of the diffusion zone. Since serious errors might result if specimens were sectioned in the usual manner, a technique of lathe sectioning was devised to allow sections to be taken parallel to planes of equal concentration.

Jan 1, 1967

By J. C. Yannopoulos, N. J. Themelis

Ah electronic thermogravirnetric balance was used to measure the veductioiz rule o single cirpric oxide particles suspended in a stream of hydrogen. Very jzne thermocouples embedded in lie center and at the surface of the sphere recorded the variation of terw perature during reduction. In contrast to iron oxide reduction, where in most instances the rate of interface reactiokl is controlling, the heat- and mass-transfer phenotnena play a predolrinant role in the reduction of cupric oxide. The correlation of experitnental data or tnass lransfev lhrough the boundary layer at Reynolds nunlber 0-4 50 was as jollocs: ThE reduction of cupric oxide by hydrogen is represented by the equation: It is a highly exothermic reaction and the amount of heat released varies only slightly with temperature (-21,430 cal per g-mole at 400°C). Most of the published studies on this system have been conducted at temperatures in the range of 34 to 280c.l-&apos; The concensus of opinion has been that at temperatures below 200°C the reaction is preceded by an induction period during which there is very little or no reduction. The length of this period diminishes as the temperature of the reaction is increased1l5 and aseawa found that at 280°C reduction starts practically immediately when the oxide is exposed to hydrogen gas. The existence of an induction, or incubation, period has led experimenters to believe that the reduction of CuO by hydrogen is catalyzed by metallic copper.&apos; Boldurev and rmolaev found that mechanical additions of powdered copper to oxide did not affect its reduction, although metallic copper produced during the reduction seemed to have a catalytic effect. At least three other authors2&apos;5&apos;7 have reported that addition of copper had no effect on the rate of reduction. Pease and alor&apos; observed that water vapor had a strong inhibiting effect on the reduction at 1503C, but its effect was greatly diminished at 200 C. Pavlychenko and Rubinchik5 studied this reaction at 159 to 235 C and found that, once the reaction had been initiated, there was no inhibiting effect due to the introduction of water in the hydrogen stream; at temperatures above 183°C there was no inhibiting effect due to water vapor, either before or during reaction. The same authors noted that the rate of reduction was independent of pressure in the range of 200 to 700 mm Hg. aseawa investigated the kinetics of the CuO-Hz system at 160 to 280°C and estimated the apparent activation energy at 14,000 cal per g-mole. A similar value (13,500 1200 cal per g-mole) was reported by ond&apos; in the temperature range 148 to 216°C. Bond also reported that there was no incubation period and that water vapor had no inhibiting effect on reduction at temperatures above 190 C. The above studies have been conducted at temperatures below 280°C and the physical configuration of the system under investigation has not been defined adequately. However, it is well-known that the mechanism of gas-solid reactions depends on a number of in series physical and chemical rate prcesses.&apos;&apos; It is, therefore, essential to include among the experimental factors the geometry of the solid system and the mass-transport characteristics of the reducing gas. Scott studied the reduction of packed beds of cupric oxide cylinders by Hz-He streams of very low hydrogen concentrations at temperatures 400 to 600 C, pressure of 10 to 30 atm, and gas velocity from 0.18 to 5.8 ft per sec (3 < Rep < 30). The reduction rate was found to be mainly controlled by diffusion through the boundary layer and through the pores of the reduced copper phase. The following correlation was proposed: Scott in an earlier work studied the reduction of fixed beds of cupric oxide wire and found that the rate of flow of the gas stream through the bed had a controlling effect on the rate of reduction. The same mass-transfer phenomenon was observed by Bond and clark13 on a similar reduction system. The analogy between mass and heat transfer through the boundary layer which exists between a solid surface and the bulk stream stems from the similarity of the differential equations representing these phenomena

Jan 1, 1967

By Kurt Kennedy

A method is described by which three elements can be condensed simirltaneously on a common substrate in such a way that the composition varies with position on the substrate. Almost all possible combinations of three solid elements can be formed in a single evaporation. The three elements are heated by magnetically deflected electron beams. The alloys and cornpounds formed by this method generally correspond to those trade by other methods; however, many exceptions exist. Simple symmetric crystallographic phases tend to form in preference to more complex phases. The Nb-Sn. Cr-Fe-Nt, and other systems of alloys made by this method will be discussed. Phases that form very slowly, such as the o phase in Cr-Fe alloys, may be formed rapidly by this method when certain substrate temperatures are used. STUDYING all the mixtures and compounds of two or more elements by the preparation of individual samples forces the investigator to make sampling sufficiently close together so that the properties of the intermediate compositions can be inferred. A completely unknown system will require a dis c our aging ly large number of preparations in order to fully know all its properties. For the purpose of expediting this type of investigation, methods have been devised to prepare samples that have a continuous variation in composition over some predefined area. The code-position of two elements onto suitable substrates has been used to produce alloys or compounds that have variable compositions depending on their positions on the substrates Composition gradients have been formed by depositing a wedge-shaped layer of one element and then depositing a second wedge-shaped layer on top of it such that the total film thickness is kept constant. Concentration equilibrium perpendicular to the surface is then established by annealing.4 This paper describes a method for the simultaneous condensation of three volatile components on a substrate such that there is a regular variation of composition with position on the substrate. The arrangement of the evaporation sources and the substrate is shown schematically in Fig. 1. Materials to be evaporated are placed in three water-cooled crucibles located at the corners of a 10-in. equilateral triangle. Electron beams from cathodes located below the crucibles are bent 180 deg by magnetic fields and focused on the material to be evaporated. The cathodes are connected in parallel to a constant-current 12-kv power supply. The distribution of emission current from each cathode is controlled by filament temperature. When materials that sublime are to be evaporated, the electron beam is deflected by an auxiliary ac magnetic field so that the beam moves over the surface of the evaporating material rather than digging a hole in one spot. The substrate is a 10-in. triangle of 2-mil stainless steel or molybdenum which is stretched against a slightly curved heat sink by a frame as shown in Fig. 2. This frame and heat sink are located so that each corner is directly above an evaporation source. The heat sink has three radiant heaters at each corner that can be separately controlled permitting the

Jan 1, 1967

By Joseph N. Harstead

This Bureau of Mines report provides information on the first 49 water-flood projects (or units) in Nebraska. All injection was in the ?D? or "J" Cretaceous sands of western Nebraska. Specific data presented include location, map, discovery and development, water supply and injection, oil and water production, estimates of oil in place, primary and secondary recoveries. The 49 projects studied) including four dual-zone projects, should recover about 126.5 million barrels of oil. Eighty-six percent of the estimated oil had been recovered by the end of 1966. Abundant water was found near most projects.

Jan 1, 1967