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By S. Stopek, E. D. Hinkley, R. H. Rediker

Epitaxial heterojunctions have been prepared by melting the lower -melting-point semiconductor of the interface between two dijferent semiconductors. when the temperature is reduced, the melted material recrystallizes, having alloyed into the higher -melting-point semiconditctor. The electrical and elcctro-optical properties of such single-crystal heterojunctions between GaAs and Gash and between p-type InAs and n-type Gash are the subject of this paper. The forward current varies as exp (AV), where A is substantially independent of temperatuve. For Gds-Gash heterojunctions at temperatures above, 370°K, if the current-voltage relationship were to he expressed as exp (qV/nkT), then n would he less than unity. The injection luminescence associated with forward current is, for the most part, characteristic. of the lower bandgap semicondutctor. These results can he explained by carrier injection into the lower bandgap semiconductor by tunneling through a barrier at the interface. The photovoltaic effect measured for incident photons having energies in the range between the bandgaps of the two semiconductors is much smaller than that produced by higher-energy photon The smallness of this between -the-gap photovoltaic response can he explained by the low probability for penetration of the barrier by the carriers produced in the smaller -bandgap semiconductor. THE technique of interface alloying has been used to produce single-crystal junctions between dissimilar semiconductors.' Oriented wafers are placed on a carbon heater strip, Fig. 1. so that semiconductor S1, which has the lower melting point, is supported by semiconductor S2. Electrical current passed through the heater strip produces a temperature gradient such that S2 is at a higher temperature than S1. As the temperature is raised the lower face of S1 begins to melt. Before the entire wafer can melt, however, the heater-strip current is turned off and, as illustrated in Fig. l. the melted portion recrystallizes, having alloyed into S2. Junctions have been fabricated by the above procedure between GaAs and germanium, between GaAs and GaSb, and between InAs and GaSb. Mroczkowski, Lavine. and Gatos have described the metallurgical and chemical aspects of the GaAs-Ge junction.2 The transition from GaAs to germanium is not monotonic and a portion of the recrystallized region consists of the GaAs-Ge eutectic. Since gallium is an acceptor and arsenic is a donor in germanium, since germanium dopes GaAs, and since the electrical properties of the GaAs-Ge eutectic have not been investigated, any interpretation of the electrical characteristics in terms of simple heterojunction theory would be incorrect. That the rectification of GaAs-Ge heterojunctions is not a property of the impurity doping of the GaAs or the germanium, but is most probably due to the impurity distribution in the recrystallized region, is clear from the fact that forward conduction occurred for all the GaAs-Ge interface-alloy junctions (whether they be n-n,n-p. p-n. or p-p) when the germanium was biased positively. The electrical characteristics of these GaAs-Ge heterojunctions will not be discussed further in this paper. Electron-beam microprobe analysis of GaAs-GaSb heterojunctions showed that the transition from arsenic to antimony atoms was without structure. and that the transition occurred within a 2 to 3 region.' In this paper we will describe the electrical properties of the GaAs-GaSb heterojunctions as well as electrical and electro-optical properties of the InAs-GaSb heterojunctions. A band model for the junction will be proposed which can explain these properties. ELECTRICAL PROPERTIES OF GaAs-GaSb HETEROJUNCTIONS After interface alloying. in preparation for the electrical and electro-optical experiments, ohmic contacts were made by conventional means. For example. Kovar tabs clad with tin were alloyed to n-GaAs or similar tabs clad with Au-Zn were alloyed to p-GaAs. The units were mounted and then etched. All four combinations of conductivity types

Jan 1, 1965

By Adrian J. Mathias

For many years excavations were made in rock exclusively by conventional blasting methods, and without concern for damage to the rock surfaces which remained after the excavation was completed. Recently, however, there is an increasing awareness for the importance of making rock excavations with as little damage as possible to the remaining rock surfaces; consequently, several revolutionary new precision blasting techniques have been developed during the past few years. These techniques, variously known as cushion, smooth- wall, perimeter, pre-shear, and pre-split blasting, basically involve the creation of a fracture plane in the rock between a series of blasted holes. The variations in each of these techniques are largely due to the differences in hole diameters, hole spacings, methods of charging, and sequence of blasting used to achieve certain specific results. The development of these precision blasting techniques was initiated by Canadian Industries Limited in 1953 at the time the Sir Adam Beck No. 2 Hydro-electric Project was under construction by the Hydro-Electric Power Commission of Ontario. Since then, these techniques have been somewhat advanced, and they have been applied with varying degrees of success to a number of projects. These projects include railroad and high- way cuts, dam spillway channel excavations, canal excavations, tunnel driving, shaft sinking, and other underground applications.

Jan 1, 1965

By Laurence B. James

The California Department of Water Resources is concerned with the development, distribution, and protection of the State's water resources. Geologic activities of the Department relate to planning, construction, and operation of water projects, supervision of the safety of over 900 dams under state jurisdiction, and investigation and control of ground water supply. The Department is engineering oriented, and the role of the geologist is to assist with the solution of engineering problems. Some of these problems require the integration of many talents, including not only those of geologists and engineers, but also those of economists, lawyers, seismologists, chemists, geophysicists, and hydrologists, Frequently, a task force of several disciplines will attack a problem as a team.

Jan 1, 1965

By A. A. Dor

Recent developments in the design of concentration plants have reflected the increased recognition that has been given to the economic and metallurgical advantages of autogenous grinding. This has manifested itself in the increasing adoption of primary auto genous grinding in iron ore 'beneficiation plants in North America. Table 1 lists eleven major iron ore beneficiation plants which have either been put in operation since 1961 or are under construction at present. Seven out of these eleven plants have adopted primary autogenous grinding. Four of them have coarse grinding mills (8 to 14 mesh) and three have fine grinding primary circuits (48 to 65 mesh). Their nominal capacity totals 26. 2 million ltpy of concentrates or pellets, representing very nearly 75% of the aggregate capacity 135. 3 million ltpy) of the eleven concentrators listed. For a long time there was a tendency to consider that primary autogenous grinding was only applicable to suitable coarse grained ores, However, extensive testing of a very wide variety of ores, and actual operating performance in several commercial plants, seem to have established beyond reasonable doubt, that the majority of mineral ores which the beneficiation engineer may be called upon to process can be ground autogenously. The basis for the selection of autogenous or conventional grinding mills, becomes principally economic and depends on the liberation characteristics of the ores under consideration and their relative hardness and grindability.

Jan 1, 1965

By John L. Miles

John L. Miles (Arthur D. Little, 1nc.)—Pollack and orris" have reported measurements on electron tunneling through A1-A12O3-A1 sandwiches in which the oxide was formed by gaseous oxidation in a glow discharge. From these measurements they deduced the asymmetry of the barrier and, since this is small, conclude that the mechanism suggested by Mott19 for the growth of oxide in thin A12O3 films is inapplicable. In earlier papers20 Pollack and Morris report similar work for oxide films grown thermally. In this case they find a greater asymmetry and conclude that the Mott mechanism is valid. I would like to point out that both these conclusions are quite unjustified. Mott suggests that the growth of the oxide film on aluminum results from the passage of ions through the already present film of oxide under the action of an electric field. This field results from a constant voltage which is in effect a contact potential between metal on one side of the barrier and adsorbed oxygen ions on the other side of the barrier. The theory does not require that the oxide grown is nonuniform either in stoichiometry or structure. It does however specifically assume that the partial layer of ionized oxygen on the surface remains adsorbed on the surface of the growing oxide. In other words, the so-called "built-in field" remains in the oxide only as long as the ionized oxygen is present. When a counter electrode of aluminum is deposited on the oxide, it will react with the adsorbed oxygen on the surface of the oxide, thus forming a small additional amount of oxide. It is clear, then, that there is no requirement in the Mott theory of oxide growth which would necessitate tunneling currents through an Al-A1203-A1 sample to be different when the polarity is reversed. Neither does the theory eliminate the possibility that some additional mechanism could cause the tunneling barrier to be asymmetric and hence tunneling currents to be a function of polarity in such a sandwich. Thus these tunneling-currents measurements are not germane to the question of whether the Mott mechanism is the true method of growth of aluminum oxide films. In fact, it is not surprising that there should be a difference between the oxide properties at the two interfaces (with resulting asymmetry in the tunneling barrier) since the growth conditions and growth rates must have been quite different at these two positions. S. R. Pollack and C. E. Morris (authors' reply)— The point raised by Miles above is one has caused some confusion in the past. The following is an attempt to clarify this point. The built-in field which is responsible for the growth of the thermal oxide at low temperatures arises, according to Mott, because of the passage of electrons from the Fermi surface of the oxidizing metal to surface states introduced by the adsorbed oxygen. It is assumed that the energy of these surface states lies below the Fermi energy of the metal. Electrons therefore continue to flow from the metal to the surface until the built-in electric field raises the potential energy of the surface states to the value of the Fermi energy in the metal, at which time equilibrium is obtained between the surface states and the metal. That is in equilibrium as many excess electrons pass from the metal to the surface per unit time as vice versa. The surface of the oxide prior to deposition of a metallic counterelectrode can then be pictured as follows. The Fermi energy lies in the energy gap of the oxide and is essentially pinned at the energy of the oxygen surface states. The vacuum work function of the oxide is then given by the sum of the electron affinity of the oxide (i.e., the difference in energy between the vacuum and the conduction-band minimum) plus the energy difference between the conduction-band minimum and the Fermi energy. The deposition of a metal onto the surface of the oxide can result in a transfer of electrons across the extremely thin oxide only if there is a contact potential difference between the deposited metal and the parent metal or oxide. That is if the vacuum work function of the deposited metal differs from that of the parent metal, then charge can be redistributed across the oxide in order to equilibriate the Fermi energy across the structure. (It should be

Jan 1, 1965

By Albert W. Deurbrouck

This report describes the preparation characteristics of 23 coal samples collected from nine of the more significant coalbeds of Fayette County, W. Va. In 1963 almost 5.4 million tons of medium to high volatile B coals of excellent quality for metallurgical and steam markets were produced in Fayette County. Of the 23 coal samples collected 11 would require some upgrading to pro-vide metallurgical quality products, 11 were acceptable as received, and 1 was a noncaking coal. Cleaning these coals to metallurgical standards would require only the removal of the sink 1.58 specific gravity material which would be quite easy as very little near-separating-gravity material was present at this gravity.

Jan 1, 1965

By Ralph H. Whaite

The Bureau of Mines program for microfilming maps of abandoned mines in the Pennsylvania anthracite region is described. A catalog of the maps that have been microfilmed in the Eastern Middle anthracite field--the first area to be covered in the program--is presented. Additional catalogs will be published as significant mining areas are completed.

Jan 1, 1965

By M. R. Geer

Samples of coal from six beds in the Roslyn-Cle Elum field of Washington were subjected to float-and-sink tests to determine their amenability to the production of high-ash boiler fuel for on-site power generation. Grindability tests and analyses of ash were made. All of the coals would require some degree of cleaning to insure a product of 25 percent ash. With two of the coals the entire size range would have to be washed. With the other four, it would suffice to clean only the coarse coal and bypass the raw fines.

Jan 1, 1965

By John G. Simmons

A tutorial account of the tunnel effect between metal electrodes separated by a thin insulating film is presented. Energy diagrams of metal-insulator -metal sandwiches are briefly discussed, and the isothermal and thermal J-V characteristics for symmetric and asymmetric tunnel junctions are derived from a generalized expression. Experimental data from tunnel junctions are presented, and it is shown how, correlation between theory and experiment permits a determination of some of the oxide properties. Finally, the barrier heights in AT-Al2O3-A1 junctions determined by various inr3estigators are discussed. The object of this paper is to give a tutorial account of the electric-tunnel effect between metal electrodes separated by a thin insulating film and to illustrate its utility in the study of metal-oxide interfaces. This paper will emphasize the theoretical aspects of the electric-tunnel effect: however, a brief account of the more recent experimental work will be presented. A more comprehensive experimental study of the tunnel effect will be presented in the following paper by Drs. Pollack and Morris, see p. 497. We will open with a discussion of the energy diagrams for metal-insulator-metal junctions and what we mean by the electric-tunnel effect. Following this is an account of the theoretical studies of Sommerfeld and Bethe, and Holm, and the recently reported calculations on symmetric and asymmetric junctions using the generalized formula. The theoretical presentation is concluded with calculations on the temperature dependence of the tunnel J-V characteristic. In the experimental section, it is shown how barrier heights and thicknesses are determined by comparing the experimental data with the theory. Finally, the results of various investigators on the determination of the barrier heights in Al-Al2O,-A1 systems are discussed. I) POTENTIAL BARRIERS BETWEEN CLOSELY SPACED ELECTRODES Since it is necessary to supply energy to a metal in order to observe electron emission from its surface, it is evident that the potential energy of an electron within a metal is lower than that of an electron at rest outside the metal. It follows, then, that the electron must undergo a change in potential as it crosses the metal-vacuum interface. In the Sommerfeld1 free-electron theory of metals it is assumed that the free electrons, the electrons responsible for the electrical characteristics of metals, move in a constant potential environment in the metal, and are contained within the metal by a potential barrier at the metal-vacuum interface. It will be evident that the idea of a constant potential environment is a very idealized model, since the potential energy of an electron is influenced by all of the atoms and the other electrons within the metal; however, its use is justified by the many excellent results it gives.2 Fig. l (a) is the energy diagram of the model envisaged by Sommerfeld; the metal is represented by a potential-energy well of depth V,; the vacuum level represents the energy of an electron at rest outside the metal. At 0°K the electrons, which exist in pairs in discrete energy levels, fill up the well to an energy ?, the Fermi level. The distance, Vo - ?, from the Fermi level to the vacuum level is known as the work function of the metal, and represents the minimum energy required to free electrons from the interior of the metal at 0°K.

Jan 1, 1965

By R. W. Stahl

Gas accumulation and dust suspension are the major safety hazards in coal stockpiling and reclaiming operations. This report presents a schedule of safety precautions and plant design features devised by the Bureau of Mines to reduce danger from these and other sources.

Jan 1, 1965

By Lloyd B. Underwood

In the event of a sudden nuclear attack upon the United States, it is imperative that vital command and control centers have a high probability of survival. One such vital facility is the North American Air Defense Command Combat Operations Center at Colorado Springs, Colorado. Known briefly as NOW, this installation when completed will be housed in large chambers excavated out of granite beneath the eastern slope of Cheyenne Mountain (Figure 1). The NORAD COC, a U. S. Air Force sponsored project, will serve as the primary collection and evaluation center for data concerning unknown aircraft, missiles, or space vehicles, which might bring destruction to North America. The data will be fed into high-speed computers and electronic equipment from outpost sources - radar, ballistic missile early warning stations and picket ships throughout the world. Electronically controlled display boards will make it possible to evaluate the tracking data instantaneously and to take appropriate defensive action1.

Jan 1, 1965

By W. I. Duvall, D. E. Stephenson

A theoretical solution is given for the energy that is radiated outward when either a cylindrical or spherical cavity located underground in a uniform stress field is suddenly created or enlarged. The method of derivation shows that the stress field in the solid rock surrounding the opening does work on the rock because of elastic displacements that result when the size of the cavity is increased. The amount of this work is sufficient to account for both the increase in the strain energy in the rock surrounding the opening and the seismic energy that radiates outward. Thus, the source of the radiant seismic energy is mainly the gravitational potential energy and not the strain energy stored in the rock. The amount of the radiant seismic energy is directly proportional to the volume of the rock removed from the opening or relieved of stress. Seismic energies from rockbursts are compared with earthquake energies. Also, the amount of gravitational potential energy released by underground explosions is calculated and found to be small compared to the seismic energy generated by the detonation of the explosive. A review of the early literature on rockbursts shows that a number of investigators calculated the amount of energy released by rockbursts. 1-5 However, none of these papers give the formula used to make these calculations or a reference to the derivation of any formulas. The general impression that one obtains from these early papers is that the main source of the seismic energy released by rock-burst is the strain energy stored in the rock before it is fractured. However, a few of the early papers appear to have considered the solid rock at a distance from the mine opening as a possible source of the seismic energy. Recently Black and starfield7 gave a theoretical solution for the strain energy in a stressed plate with and without a circular hole. Also, Press and Archambeau8 gave the theoretical solution for the seismic energy released when a spherical cavity is created in rock subjected to a three-dimensional stress field. Both of the above theoretical papers start with the condition of no opening and calculate the strain energy before and after the opening is suddenly formed. Neither of these papers appear to have calculated the work done by the applied stress field as the cavity is enlarged. The rockburst problem associated with deep mining is concerned with the failure of the solid rock surrounding an underground opening. Therefore, it seems appropriate to consider theoretically the problem of suddenly enlarging the size of an existing opening. The purpose of this paper is to present the theoretical solution for the energy that is available for release as seismic energy when an underground circular tunnel or spherical cavity is suddenly enlarged in diameter. To keep the mathematics as simple as possible, a uniform radial applied stress field is assumed and the rock is assumed to be isotropic, homogeneous and perfectly elastic.

Jan 1, 1965

By John Knox

The object of this paper is to present an analysis of the major problems encountered both in the design and application of downhole drills. Particular reference is made to design features governed by: physical size limitations; metallurgical material standards; physical operating environment; range of commercial materials to be drilled; high power output required, coupled with simplicity from the operating and maintenance viewpoint; and bit design. The history of attempts to develop downhole drills is discussed, and representative mechanical configurations are illustrated. The general design and application aspects of the different types are commented on. The application of this drill type in various commercial fields, such as (a) oil-well drilling, (b) open-pit mining and (c) underground mining, is discussed, along with the limitations presently imposed by the commercial state of the art in the manufacture of accessory equipment; e.g., drill rods, air compressors, mountings, etc. Suggestions on the possible future direction of the development and application of this tool are put forth.

Jan 1, 1965

By C. E. Morris, S. R. Pollack

Current -vo1tage -temperature characteristics were studied for Al-A12O3-Al, Au structures. The oxide film was grown by gaseous oxidation in an 0, glow discharge. The electron-transfer mechanism was identified as tunneling and the barrier heights and thickness were determined. It was found that the barrier height at the parent aluminum-oxide interface is 1.5 ev and the built-in vloltage with an aluminum counter electrode is 0.35 v. The growth mechanism of the oxide is also discussed and it is suggested that Mott&apos;s theory is not applicable in describing the growth. Discrepancies were observed in the detailed comparison of tunneling theory, based on a trapezoidal model, with the data, and several possible explanations are discussed. THEORETICAL analyses of electron tunneling from one nonsuperconducting metal to another through an extremely thin insulating film have been presented.1-6 These calculations relate the current density, J, to the voltage, V, between the two metals, and to the temperature, T. The results of these calculations indicate that the magnitude of J and the detailed shape of the J-V characteristic will in general depend most strongly upon such properties of the insulating film as the thickness, the dielectric constant, and the structure of the electron energy barrier profile. The experimental results of many7-11 workers have corroborated the main features of these calcu- lations and have in fact been used to determine properties of the thin insulating film. It has been demonstrated, for example, that the tunneling current formulation of simmons4 is adequate to describe the observed J-V characteristic over approximately 10 orders of magnitude of current. Furthermore, from these observations and analyses, insight into the nature of the A1-A12O3 (thermally grown) interface region has been obtained.&apos;&apos; The temperature dependence of the tunnel current has also been studied and, although a self-consistent set of tunneling parameters can be chosen to describe these data at low voltages (i.e., <0.5 v), the tunneling parameters are different from those obtained from higher voltage (i.e., of the order of 1 to 5 v) measurements." We have measured the effect of temperature and voltage upon the tunnel current at higher applied voltages and find that the theory is inadequate to describe all of the effects reported here. A discussion of the origin of this inadequacy is presented following a description of the samples used for these experiments, and the experimental results. SAMPLE PREPARATION Metal-insulator-metal structures were fabricated in the following way. A 99.999 pct A1 charge was used to deposit, in vacuo, thirty films, 2000Å thick, onto a 1 by 2 in. glass substrate (7059 Corning glass). Prior to deposition the substrate was glow-discharged for final cleanup and then baked at 200°C for 2 hr at a pressure of 5 x 10-7 torr. The pressure during deposition of the metal films was 2 X 10-6 torr and the deposition rate was 50 to 100Å per

Jan 1, 1965

By E. Wainer, K. D. Burnham

A wet beneficiation technique for producing wollas-tonite from its ore in high yield and purity has been evaluated in a pilot plant operation at the rate of 75 tons per month. Finely crushed, unsized wollastonite ore mixed with water is passed through a high in tensity oscillating wet magnetic separator of unique design and in a single pass over 90% of the wolla-stonite exhibiting a crystal purity of 99.8% is obtained irrespective of size of feed fraction. Thereafter, the material is processed by closed cycle standard wet milling and classification techniques to yield a 1µ size product, though any mesh size up to and including 50 mesh may be obtained, if desired. Costs appear to be significantly lower than those available from dry processed techniques. Wollas tonite made by this unusual wet process appears to have potential utility in the following fields: ceramics, paints, plastics, paper, organic finishes, reinforcement of portland cement items, controlled porosity refractory ceramic foams, cinder and concrete block paint, and the like. The 1µ and certain chemically processed varieties of wollastonite may have unusual utility in the paper industry both as a filler and as a coating material and in the organic finish industry. Extensive deposits of wollastonite ore equivalent to an average tenor of 50% to 60% of this latter mineral in easily separable form exists in and around Essex County in northern New York State in reserves of the order of several tens of millions of tons. While important portions of these deposits are susceptible to open pit mining techniques, one operation near Wills-boro, N.Y., involves tunnel mining and dry milling and beneficiation techniques. This mill and tunnel mine is presently being operated by The Cabot Corp. and a variety of particle sizes are now sold into markets in the ceramic, paint, plastic finish, floor tile and in similar fields in substantial tonnages on a repetitive basis. Serious investigation and study over the past several years has indicated that, outside of the obvious economies of open pit techniques for mining purposes, wet beneficiation and milling procedures applied to the ore not only represent a potential for greater economies in the production of a superfine finished product but yields products of improved properties exhibiting increased market potential which may not be available from the dry ground product. The Lewis and Deerhead deposits, controlled by the Adirondack Development Corp., appear to be identical to the Wilisboro deposit. Utilizing ore taken from the Lewis and Deerhead deposits, a pilot plant process for the wet beneficiation, milling and classifying of wollastonite ore has been operated for several months. After scalping a marketable garnet product from a minus 16 mesh dry crushed feed on a high intensity roll magnet the balance of the material is then roll crushed in a closed cycle until it will pass a 50 mesh screen. The product constitutes the feed of the wet magnetic separator. The heart of the new beneficiation process is a cyclically operated wet magnetic separator which exhibits the unique feature that unsized feed is easily handled. Product yields of higher purity are equal to that obtained with dry magnetic separations which use closely sized dry ore and multiple passes, but only produce wollastonite of about 98% mineral purity as determined by sink float techniques. It was anticipated that the wet processing through the grinding, milling and classification stage would yield a low cost 1µ ground product which should make available greatly increased applications for the mineral beyond those presently enjoyed. The improved purity was also expected to provide coarser sizes which might be utilized as a raw material for chemical modification which again would expand the uses of wollastonite. The evidence thus far collected appears to indicate that this premise may be expected to be fulfilled. There are on the surface of wollastonite particle sites at which cheinical reactions may occur1. It is believed that wet ground material provides a better base which will allow wollastonite a deeper entree into the field of chemical raw materials. Wet ground at 20µ and finer permits with certainty a number of chemical reactions, some of which are mentioned later in this article. While well crystallized wollastonite makes up the majority of the ore, the balance consists mainly of very weakly magnetic diopside of the hedenbergite-

Jan 1, 1965

By Ralph H. Whaite

The Bureau of Mines program for microfilming maps of abandoned mines in the Pennsylvania anthracite region is described. A catalog of the maps that have been microfilmed in the Eastern Middle anthracite field--the first area to be covered in the program--is presented. Additional catalogs will be published as significant mining areas are completed.

Jan 1, 1965

By R. W. Stahl

Gas accumulation and dust suspension are the major safety hazards in coal stockpiling and reclaiming operations. This report presents a schedule of safety precautions and plant design features devised by the Bureau of Mines to reduce danger from these and other sources.

Jan 1, 1965

To enable ammonium nitrate-fuel oil (AN-FO) to be used on an equal weight basis with nitroglycerine explosives, smaller diameter bore holes became necessary with consequent modifications to drill steel and burden on holes. Detonation of AN-FO in small diameter holes proved successful both with and without primer charges but some alterations were required to adapt anoloders to the smaller holes.Important factors in training all operators in the new charging method were the retention of improved fragmentation, avoidance of excessive overbreak and keeping wall rock dilution to an absolute minimum. The successful storage of ammonium nitrate in climatic conditions with daily temperature fluctuations above and below the critical 90&#176;F has been achieved.INTRODUCTIONTechnical aspects of ammonium nitrate-fuel oil (AN-Fa) blasting agent are well covered in recent literature. This paper deals primarily with the manner of its introduction as the principal explosive underground at Great Boulder Gold Mines Ltd. and with the many problems encountered in the process. Following reasonably successful experimental firings in June 1962&apos;, using granular ammonium nitrate and an anoloder, permission was granted by theWestern Australian Mines Department to carry out test work in selected areas of the mine. The permit allowed for fuse firing only, and for a mixture of AN-Fa containing between 5t and 6 per cent fuel oil, with an adequate primer.The use of AN-Fa on an equal weight basis with nitroglycerine explosives, involved smaller diameter holes with alteration to ground burden and modification to drill steel.Initial tests indicated that it was apparent that AN-Fa could not replace gelignite on an equal weight basis if the...

Jan 1, 1965

The principal activities of the Bureau of Mines Explosives Research Center from July 1, 1963 to June 30, 1964 are described briefly in part 1. Part 2 gives short abstracts of publications that appeared during fiscal year 1964; in general, the research reported in these publications antedates the report period. Part 3 describes a short-term investigation into safety problems associated with shipping of molten sulfur; this investigation is not at present destined for publication elsewhere.

Jan 1, 1965

By D. L. Feucht, R. L. Longini

The semiconductor heterojunction is considered in terms of simple models which may lead to an understanding of move complex heterojunctions. Metallurgical and electrical properties of hetero-junctions aye discussed including the interface structure, energy -band diagram, and carrier transbovt across the interface. It is found that in a heterojunction all mechanisms such as injection, tunneling, and junction recombination found in simple junctions play modified voles. INTERFACES between materials (grain boundaries, the electrical junction between two differently doped materials in a single crystal, the oxide-metal interface, or metal-metal junctions) are of considerable importance in many situations. These various interfaces all have one very fundamental thing in common. Quantum mechanically speaking, the wave functions of the electrons in one material may penetrate the other material but, in general, only to the extent of angstroms. From an electrical point of view the conduction mechanism changes as a current passes through such junctions. In some cases the change is tremendous, in others almost negligible. The interface, then, is the locus of a change of conduction mechanisms. Some of these, particularly in semiconductors, are well-understood. The ordinary p-n junction in a single crystal can be the locus of an injection mechanism or a tunneling process, depending on conditions. The mechanisms are probably best understood in semiconductors because of the possible simplified view of particlelike conduction. The bands are either nearly filled or nearly empty and band overlap is seldom involved. The same fundamentals are probably important in other situations too but they are very difficult to look at naively. Although the simple look at the semiconductor case only gives us a relatively rough picture which must then be refined, the other systems, which involve a more complex situation, immediately are in many ways too difficult. There are too many initial choices of complex systems and therefore it is not possible to be even reasonably certain of any one model. Because of the relative simplicity of semiconductors, their good and controllable structure, and because of the ability to make many measurements on them not normally available to either metals or insulators! they are probably the best understood materials. It is therefore desirable to use them as a tool to further the understanding of interfaces in general. Semiconductor-heterojunction concepts were first proposed by kroemer1 in 1957. This was followed several years later by reports on the fabrication and experimental characteristics of heterojunction structures by Anderson2 and Diedrich and jotten.3 I) THE HETEROJUNCTION STRUCTURE To get down to hardware, when we refer to a semiconductor heterojunction we imply that there exists an intimate contact between different semiconductor materials. We could put two pieces of material together, complete with oxide layers, we could remove the oxides, or we could even melt the interface and hopefully get wetting and a good "bond" on solidifying. In fact we could by some means grow a crystal of one material using the other as a seed. Essentially we are interested only in the last two because they are the simplest to look at analytically. The degree of perfection of fit varies greatly and is reflected somewhat in the arc welder&apos;s joint strength. The lattice match of the two materials, their orientation, and so forth. is obviously necessary for a good bond but so is the continuity of any polar bonds which are involved such as in the III-V semiconductors. The mechanical misfit between two similar lattices can be described in terms of edge dislocations. The edge-type dislocations must be very close together for the usual misfit and there must be dislocations for each of several different Burger&apos;s vectors in order to produce a lattice match. The .&apos;dangling bonds&apos;&apos; resulting will be involved in producing interface charge. Order of magnitude estimates of the charge density extrapolated from low densities of dislocations in homogeneous materials give 5 x 1013 cm-2 Ge-Si and 1 X 1012 cm-2 Ge-GaAs electronic charges. Edge dislocations also act as very active recombination centers between holes and electrons. One lattice "matching" difficulty usually exists even if two structures have essentially the same lattice constants as they will have different coefficients of therma1 expansion. Thus, on cooling from the usually high temperature of fabrication to room temperature, dislocations are produced, a good fit not existing at both temperatures. In brittle materials this shrinkage may even result in cracking. For the Ge-Si interface the mismatch is about 2 x 10 -6 per degree whereas it is less than 10"7 per degree between germanium and GaAs. The exact effect of the misfit is dependent on the thickness of the materials involved. For a very

Jan 1, 1965