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By J. A. Snyder, W. L. Finlay

G. Edmunds—Solid solubility is considered to be of either the interstitial or the substitutional type. Is it possible, in a binary alloy as the simplest case, that some of the solute atoms are present in the normal lattice sites (substitutionally or filling lattice vacancies) while simultaneously others are in interstitial positionss One might even ask whether a distribution of the two types may be the normal situation. H. M. Meyer—Metastable states of interstitial atoms occupying vacant lattice sites possibly occur as well as of substitutional atoms squeezed in between regular matrix positions. However (as we know since Hume-Rothery), the solute atoms choose between the two kinds of solutions; consequently, every solute will be unequivocally either substitutional or interstitial in the equilibrium state of the solid solution. M. Balicki—In view of the fact that the authors apparently correlate the analysis of the alloys at the ingot stage with the properties exhibited at the testing stage, I would like to ask whether this is a fully justifiable procedure. In other words, how good are their determinations of solute concentration for correlating them with the mechanical properties. The answer to this question may explain some of the divergencies. Assuming good enough homogenization of the samples and exact determination of mechanical properties the position of the plotted experimental points will depend solely upon the accuracy of composition determination. If this is not accurate, say due to loss or pickup of elements during processing from the ingot to the testing stage, or due to a systematic error in the method employed for obtaining solute concentration data, the points will deviate from their true position and may align themselves along a different curve than the one expected. H. V. Kinsey—We have been studying the creep-rupture properties of titanium-base alloys at 1000°F. In the course of this work, anomalies in behavior of the alloys that would suggest that the material under test was becoming stronger as the test progressed have been observed. If this was so, the most likely explanation that we could think of was that the test bars were absorbing oxygen and nitrogen from the air during the test and were thereby becoming strengthened. In an attempt to determine the strengthening effect of absorbed oxygen and nitrogen the following experiment was conducted. A length of cold-rolled titanium was supplied by the E. I. du Pont Co. Two test bars, having a 1/4 in. diam gauge length, were prepared from this material. One bar was tested in the as-received condition. The second bar was heated in air at 1550°F for 100 hr and subsequently air cooled prior to testing. A testing temperature of 1000°F was employed. The results of these tests are tabulated in table 11. In the author's opinion, is it reasonable to assume that the bar that was exposed to air at 1550°F for 100 hr was stronger because it absorbed oxygen and nitrogen from the air during this heat treatment? W. L. Finlay (authors' reply)—Direct experimental evidence for or against Mr. Edmunds' interesting suggestion will probably never be available. It seems possible, however, that mixed interstitial-substitutional solid solution might well occur with interstitial elements. The less likely possibility of interstitial solution of a normally substitutional element like copper in aluminum was recently discussed at length by the

Jan 1, 1951

By A. R. Elsea, E. E. Fletcher

This paper describes a metallographic investigation of the influence of tungsten or molybdenum additions upon the transformation and precipitation reactions occurring in Co-rich Co-Cr alloys. It is shown that tungsten has little effect upon the a-ß transformation temperature range, while molybdenum tends to raise it. Both elements tend to promote the formation of ? phase, molybdenum being more potent in this respect than tungsten. HIGH temperature alloys, that is, alloys which have load-carrying ability at elevated temperatures, have been developed at an increasing rate during the past few years. This has resulted from the requirements in the design of modern aircraft engines. Although many alloys of this type are available, they have been developed on an empirical basis. Metallurgists do not have a clear understanding of the phases or structures that are responsible for these high temperature properties. In order to determine why these alloys possess this particular ability, a project was started at Battelle Memorial Institute with the object of learning more about the fundamental factors which promote high temperature strength in alloys. This study was to include a correlation of microstructure and the high temperature properties of Vitallium, an alloy which is widely used for high temperature service. Vitallium is a complex material both from the standpoint of composition and microstructure. Consequently, it was necessary to obtain informa- tion regarding the phase relationships in this alloy. The Co-Cr binary diagram was determined as the first phase of this investigation.' A second paper described the effects of iron, nickel, or nitrogen on the reactions occurring in the Co-rich end of this system.' The present paper covers a continuation of this investigation in which the effects of tungsten or molybdenum on the reactions occurring in Co-rich, Co-Cr-base alloys were determined. Preparation of 'rest Materials Two series of ternary Co-Cr-base alloys, representing Co-Cr ratios of 80:20 and 68:32 ( Cr x 100 =20 and 32 ) , were prepared containing ( Co + Cr = up to 6 pct W and up to 12 pct Mo. Melting stock consisted of electrolytic Co, electrolytic Cr, 99.9 pct pure W, and 99.9 pct pure Mo. Table I lists the chemical analyses of these materials. The melting furnace was a vertical porcelain tube

Jan 1, 1952

By Dell P. Williams, Howard G. Nelson

The tensile behavior of magnesium single crystals at a temperature of 26º ± 2ºC was investigated at varying pressure levels from 760 to 8 X 10-8 tow. For crystals deformed at a constant linear strain rate of 0.061 min-1. there was no apparent effect of the vacuum environment down to 10-8 torr. However, from a vacuum of 10-5 torr down to the lowest pressure attained (8 x 10-8 tor,), the effect of the vacuum environment was to increase the strain at the end of the first linear (or easy-glide) stage and to decrease the slope of this stage; the magnitude of this effect was found to be dependent on pressure. The slope of the second linear stage was also decreased at the lower pressure levels; however, this effect appears to be caused primarity by the vacuum effect on the first linear stage. The magnitude of the vacuum-environmrnt effect was also found to be dependent upon strain rate. The reduction in flow stress at 5 x 10-8 torr, as compared to the stress in air, was obserced to be about 10 pct for a strain rate of 0.0250 min-' and 70 pct for a strain rate of 0.67 min-1. No systematic effect of pressure on the critical resolvled shear stress was observed. The data interpreted in terms of a modified form of Mott's work-hardening mechanism for hexagonal metals. It has long been known that surface conditions influence the mechanical behavior of materials. Roscoe 1 demonstrated the importance of surface conditions on mechanical behavior by testing cadmium crystals with oxide layers. He found that the "apparent" critical resolved shear stress for cadmium was increased approximately 2.5 times by the presence of an oxide layer 1000 atoms thick. The magnitude of this effect was dependent on film thickness with crystals having films less than 20 atoms thick still showing a definite increase. This observed strengthening could not be attributed to any strength of the oxide film because of 1) the thinness of the films and 2) an observed increase in the flow stress as deformation proceeded. Harper and cottrel12 obtained similar results on zinc crystals which had been etched and steamed to give artificially thick oxide films. However, in the course of this study, they also carefully examined the very early stages of plastic flow for zinc crystals which in one case had been electrolytically polished and in the other had been lightly etched to produce a thin film. They then found that the critical resolved shear stress for both surface treatments of the crystals was actually identical but that the etched crystal exhibited a much more rapid initial hardening rate. This had not been noted previously. This result indicated that, in fact, the film caused an increase in the stress for continuation of slip, rather than for the initiation of slip. Lipsett and King3 investigated the effect of evaporated gold films on the plastic behavior of cadmium single crystals. For large angles (=75 deg) between the specimen axis and the normal to the slip plane, they found that the stress-strain curve of the coated specimen always lies above that for a clean specimen. The shear strain at the end of the first linear stage was greater in clean specimens than in coated specimens and the slope of the second linear stage was

Jan 1, 1965

By Paul F. Sikora, John W. Weeton, Philip A. Clarkin

Effects of variations in carbon content and micro-structure on the stress-rupture properties of a liquid-phase-sirztered, Izeut-resistunt alloy were studied. Using the powder rnetallurgy technique, specimens could be produced having stress-rupture profierties equivalent to or better than those of the alloy in wrought form. In addition, sintered specimens were easily hot worked even when carbon contents were as high as I pct. Correlations between stress-rupture properties and micro structure were obtained in some cases. IT is well known that many alloys used in high-temperature service are quite complex both from the standpoint of chemical composition and microstruc-ture. During the development of these alloys their complexity has in some cases led to treatment schedules which, while practical, often do not fully utilize available alloying elements. For example, in some alloys, massive carbides that form during ingot practice may never be dissolved by reasonable solution treatments and therefore are unavailable for subsequent precipitation hardening, Ref. 1. This investigation was undertaken to determine whether the powder metallurgy method of consolidation might provide distinct advantages over the conventional melting method. First, segregation of alloying elements might be eliminated or reduced and thus a more efficient use of these elements obtained. Second, the structures produced in powder specimens might differ considerably from those normally seen in castings, which would perhaps result in better response to subsequent mechanical or thermal treatments. If these results could be achieved, it was felt that both forgeability and stress-rupture properties might be improved. The alloy used in this investigation was S-816 produced by powder metallurgy methods. The influence of carbon content over the range of 0.1 to 1.0 wt pct was studied for the alloy in the as-sintered condition and after three additional treatments involving heat treatment, hot swaging, and combinations thereof. EXPERIMENTAL Standard S-816 has the composition shown in Table I. It is a cobalt-base alloy having a nominal carbon content of 0.4 pct and is classified as a precipitation-hardening alloy. This alloy was chosen because it is representative of a class of heat-resistant alloys and because adequate information was available concerning its response to various treatments and its subsequent properties. For this study, -100 mesh alloy powder having essentially the same composition as shown in Table I but without the 0.4 pct C was used. Desired carbon variations, achieved by wet mixing the alloy powder with graphite, ranged from 0.1 to 1.0 wt pct. Specimens were hydrostatically pressed and then sintered in vacuum by slowly heating until incipient melting was observed. Sintering this way gave a liquid phase in the interstices of the powder particles and achieved reasonably high densities. The average density of as-sintered specimens was about 95 pct of wrought alloy density. In order to obtain various microstructures, some specimens were heat treated (solution treated for 24 hr at 2150°F, water quenched; aged 16 hr at 1400°F, air cooled); others were hot swaged at 2150 o F (50 pct reduction in area), while still others were hot swaged (50 pct reduction in area) and then given the above heat treatment. During hot swaging it was observed that forgeability was quite good even when specimens contained as much as 1.0 pct C. Specimens were evaluated by stress-rupture test-

Jan 1, 1962

By Leonard R. Weisberg

HE procedure of directional freezing by the Bridgman technique1 is frequently used in crystal preparation. On those occasions where the crystal is regrown, it can be advantageous to Crop part of the ingot before regrowth to achieve purification. This note describes some simple, yet interesting, observations concerning the effects of cropping an ingot between successive freezes. First, it is not effective to Crop the front end of an ingot, whether or not the distribution coefficient, k , of the impurities is greater or less than unity. This can be shown as follows. The concentration C, of an impurity in a directionally frozen ingot of length d with a uniform cross section is given by where x is the distance along the ingot, and C0 is the initial concentration per unit length. It is assumed in deriving this equation that diffusion is negligible in the solid, is complete in the melt, and that k is constant. Consider that a section of the ingot Ad is removed from the front end. Then the average impurity concentration in the remaining (d- Ad) section of the ingot can be shown by integration to be given by When the ingot is remelted and refrozen, the new impurity distribution is given by where xl is the distance along the refrozen ingot. Substituting the value of c into Eq. [3], one finds This is identical to Eq. [11 when x = (x, Ad), which represents the original impurity distribution in the (d - Ad) section of the ingot after the first directional freeze. Therefore, the cropping and re-freezing accomplished nothing. This can also be seen physically by realizing that the average impurity content in the melt after the first Ad section is frozen, is identical to that after the resulting ingot has been cropped and remelted. Hence, it is assumed in the following sections that only the tail end of the ingot is cropped. However, it must be realized that for impurities with k greater than one, the pieces cropped from the tail end are purer, and are therefore saved. After cropping an amount Ad from the tail end of an ingot, the average impurity concentration of impurities in the remaining portion of the ingot is given by wheref= d/d. For the case of k < 1, the purification is defined as c,/c. It is obvious from Eq. [5] that the purification increases asf increases, but the increase in purification is not large. For example, iff is doubled from 0.1 to 0.2, the purification increases by only 10 pct for k = 0.5, by only 24 pct for k = 0.1, and by 32 pct for k =0.01. Much smaller values off than 0.1 are not desirable since insufficient purification is achieved. These figures indicate that much larger values off do not lead to substantial improvement, especially considering that much of the original ingot is lost. Therefore, it is generally useful to Crop about 1/10 of the ingot to achieve purification. As compared to doubling the value off, it is much more helpful to remelt, refreeze, and crop the ingot twice. Using Eq. [51 reiteratively, and assuming f= 0.1, it is found that the purification after this process is found to be increased over the purification after a single freeze and cropping by 33 pct for k= 0.5, 450 pct for k = 0.1, and 4100 pct for k = 0.01. This indicates that considerable purification can be obtained by this procedure. However, if purification is the main goal, one should resort to zone refining,3

Jan 1, 1962

By J. F. Smith

ELASTIC constants of yttrium and eleven of the rare earth elements have been measured. This has been accomplished by measuring the propagation velocities of ultrasonic pulses. The velocity measurements were made by noting the elapsed time between an applied pulse and the appearance of successive echoes. The pulse-echo technique has become relatively common, and the basis of the measurement is outlined in several standard tests, e.g., Heuter and Bolt.1 Two important assumptions are made when using this method for the determination of elastic moduli. First, the pulse is assumed to propagate as a plane wave. To justify this assumption, the cross section of the test specimen should be large compared to the wave length of the transmitted pulse. For these measurements on the rare earth elements the minimum cross section wave length ratio was about 20. A second assumption which must be made when using polycrystalline specimens is that the grains are sufficiently numerous and randomly oriented so that the specimen may be approximated as elasti-cally isotopic. The grain size in the as-cast specimens which were used is believed to be sufficiently fine for this approximation, and the degree of preferred orientation is believed to be small. Supporting this viewpoint is the fact that elasticity measurements by the pulse-echo technique on as-cast specimens of other metals give results which are in satisfactory agreement with values obtained by other techniques. Hence, it is believed that the measured elasticity values for the rare earth elements are not apt to be seriously in error due to the assumption of elastic isotopy. The apparatus used in this determination was a modified Sperry Reflectoscope with a precisely calibrated time base circuit. Piezoelectric transducers were used both to generate the pulse and to detect the echoes. X-cut quartz crystals were used for the longitudinal modes, and Y-cut quartz crystals were used for the shear modes. Frequencies of 2.25 and 5 megacycles per sec were employed. Most of the specimens were 2.5 to 5.0 cm in length. Results Table I is a tabulation of the measured propagation velocities of longitudinal waves and of shear waves, together with densities obtained by Sped- ding, Daane, and Herrmann2 from lattice parameter measurements. The shear modulus, Poisson&apos;s ratio, and Young&apos;s modulus were calculated from the data in Table I through use of the following relationships: µ = pv32 [1] s=2-(vb/vs)2/2[1-(vb/vs)2] [2] and Y= 2µ(l+s) [3] where s is the shear modulus, Y is the Young&apos;s modulus, s is Poisson&apos;s ratio, p is the density, V0 is the longitudinal wave velocity, and v, is the shear wave velocity. The calculated quantities are shown in Table 11. Compressibility values can be computed from the relationship and the computed values may be compared with measured values obtained by Bridgman.8 Table III lists the data for such a comparison. The agreement is satisfactory, being particularly good for neodymi- um and gadolinium, poor for samarium, and intermediate for the other elements. Some variation is expected since Bridgman&apos;s measurements are isothermal, whereas the present measurements are adiabatic. In addition there may be some effect due to small variations in purity. Though most of the rare earth metals measured by Bridgman and all of the metals used in the present measurements were prepared at this laboratory, minor purity variations might exist since the samples came from different lots. Also, any imperfections such as dislocations, vacancies, voids, grain boundaries, microcracks, etc., should contribute to the volume change of a com-

Jan 1, 1958

By R. J. Wasilewski

The variation of elastic modulus with terrzperature between -150° and 600°C has been investigated. Compounds close to equiatomic cornposition exhibit very low modulus values and very high damping near room temperature. The modulus rises steeply with both decreasing and increasing temperature. The modulus minimum and the high damping are believed to be connected with a martensitic transformation of TiNi. In bulk material this transition takes place slightly above room temperature quite rapidly and reversibly, with a hysteresis of some 30°C, depending on the Ti:Ni ratio. Oxygen impurity affects the reaction time. THE inter metallic compound TiNi has been reported to exist in an ordered CsCl (B2) structure,l-6 the homogeneity range varying rather markedly with temperature.7 Some investigators reported this compound to decompose peritectoidally to Ti2Ni and TiNi, between 650° and 800°C,3 or below,&apos;,g the latter workers also suggesting the decomposition to be strain-sensitive. Purdy and Parr were the first to report a structural transformation to a new, possibly hexagonal, structure at 36°C,7 a temperature indubitably too low to allow the significant amount of diffusion necessary for a peritectoid reaction. Mechanical-property investigations of compositions close to TiNi just above room temperature have qualitatively shown remarkable anomalies, particularly with respect to clamping,&apos; and to a "memory" effect, that is, plastically deformed material returning to its original shape on being heated through the "decomposition" temperature.9 The original explanation of this effect—based on the apparent experimental observation of Ti2Ni or TiNi, formation in the material subjected to tensile or compressive stresses, respectivelp—does not appear plausible. It appeared more probable that the change involved may be a martensitic, diffusionless structural transformation, similar to those observed in other B2 structures such as 0 brass,&apos;&apos; AuCd,ll and AuZn.12 The existence of such transformation has been established recently,&apos;, although the symmetry of the low-temperature structure is not yet known. The present paper describes the elastic modulus and damping behavior of polycrystalline TiNi in both structures. EXPERIMENTAL METHOD 1) Specimens. All the specimens to be investigated were prepared from premelted electrolytic nickel and iodide titanium by nonconsumable arc melting and casting in a water-cooled copper mold. The cast billets were canned in mild steel, extruded, and swaged to approximately 0.375 in. diam. The cans were then removed by pickling or machining. Preliminary material balance checks indicated no significant weight losses on melting (less than 5 mg on a 50-g button); hence nominal compositions have been used throughout. In agreement with previously reported observations7 no single-phase material was obtained at—or close to—Ti 1.00 Ni1.00 a small amount of finely divided second phase always being present. It was found that most of the oxygen impurity was associated with this minor phase, which was identified as oxygen-bearing Ti2Ni—possibly Ti,Ni,O. The amount of this phase—at any given Ti:Ni composi-

Jan 1, 1965

By S. Stopek, E. D. Hinkley, R. H. Rediker

Epitaxial heterojunctions have been prepared by melting the lower -melting-point semiconductor of the interface between two dijferent semiconductors. when the temperature is reduced, the melted material recrystallizes, having alloyed into the higher -melting-point semiconditctor. The electrical and elcctro-optical properties of such single-crystal heterojunctions between GaAs and Gash and between p-type InAs and n-type Gash are the subject of this paper. The forward current varies as exp (AV), where A is substantially independent of temperatuve. For Gds-Gash heterojunctions at temperatures above, 370°K, if the current-voltage relationship were to he expressed as exp (qV/nkT), then n would he less than unity. The injection luminescence associated with forward current is, for the most part, characteristic. of the lower bandgap semicondutctor. These results can he explained by carrier injection into the lower bandgap semiconductor by tunneling through a barrier at the interface. The photovoltaic effect measured for incident photons having energies in the range between the bandgaps of the two semiconductors is much smaller than that produced by higher-energy photon The smallness of this between -the-gap photovoltaic response can he explained by the low probability for penetration of the barrier by the carriers produced in the smaller -bandgap semiconductor. THE technique of interface alloying has been used to produce single-crystal junctions between dissimilar semiconductors.&apos; Oriented wafers are placed on a carbon heater strip, Fig. 1. so that semiconductor S1, which has the lower melting point, is supported by semiconductor S2. Electrical current passed through the heater strip produces a temperature gradient such that S2 is at a higher temperature than S1. As the temperature is raised the lower face of S1 begins to melt. Before the entire wafer can melt, however, the heater-strip current is turned off and, as illustrated in Fig. l. the melted portion recrystallizes, having alloyed into S2. Junctions have been fabricated by the above procedure between GaAs and germanium, between GaAs and GaSb, and between InAs and GaSb. Mroczkowski, Lavine. and Gatos have described the metallurgical and chemical aspects of the GaAs-Ge junction.2 The transition from GaAs to germanium is not monotonic and a portion of the recrystallized region consists of the GaAs-Ge eutectic. Since gallium is an acceptor and arsenic is a donor in germanium, since germanium dopes GaAs, and since the electrical properties of the GaAs-Ge eutectic have not been investigated, any interpretation of the electrical characteristics in terms of simple heterojunction theory would be incorrect. That the rectification of GaAs-Ge heterojunctions is not a property of the impurity doping of the GaAs or the germanium, but is most probably due to the impurity distribution in the recrystallized region, is clear from the fact that forward conduction occurred for all the GaAs-Ge interface-alloy junctions (whether they be n-n,n-p. p-n. or p-p) when the germanium was biased positively. The electrical characteristics of these GaAs-Ge heterojunctions will not be discussed further in this paper. Electron-beam microprobe analysis of GaAs-GaSb heterojunctions showed that the transition from arsenic to antimony atoms was without structure. and that the transition occurred within a 2 to 3 region.&apos; In this paper we will describe the electrical properties of the GaAs-GaSb heterojunctions as well as electrical and electro-optical properties of the InAs-GaSb heterojunctions. A band model for the junction will be proposed which can explain these properties. ELECTRICAL PROPERTIES OF GaAs-GaSb HETEROJUNCTIONS After interface alloying. in preparation for the electrical and electro-optical experiments, ohmic contacts were made by conventional means. For example. Kovar tabs clad with tin were alloyed to n-GaAs or similar tabs clad with Au-Zn were alloyed to p-GaAs. The units were mounted and then etched. All four combinations of conductivity types

Jan 1, 1965

By D. Argyriades, G. Derge, G. M. Pound

The electrical conductance of molten FeS was studied as a function of temperature and composition. It was found that stoi-chiometric FeS (36.5 pct S) shows a minimum specific conductance of 400 ohm-1 cm-1. For the Fe-rich melts the conductivity increases with increasing amount of iron to about 4850 ohm-1&apos; cm-I at 26 pct sulfur. For the sulfur-rich melts the conductivity increases with increasing amount of sulfur until it reaches a maximum of 1300 ohm1 cm-1 for 37.4 pct S and decreases to 800 ohm-1 cm-1 for 38.3 pct sulfur. It is concluded that molten stoichiometric FeS is an intrinsic semiconductor in which the forbidden gap in the electron energy level diagram is quite narrow. Excess sulfur acts as an acceptor impurity in providing a component of positive hole conduction, while excess iron acts as a donor impurity to increase the n-type conduction. K. Bornemann and G. von Ftauschenplatl used a four-terminal, direct-current cell to study the electrical conductance of molten copper sulfide. Their measurements showed a high conductivity, of the order of 100 ohm-1 cm-" and a positive temperature coefficient. From electrolysis studies, Savelsberg2 concluded that molten Cu2S and molten FeS are electronic conductors. Further. he found that molten FeS has a high specific conductance, of the order of 1500 ohm-&apos; cm-&apos;, and a small negative temperature coefficient. Pound, Derge, and Osuch,3 using an ac Kelvin circuit and a four-terminal cell, measured the specific conductance of molten Cu,S, molten FeS, and various mixtures. They found that the specific conductance of the solutions followed a roughly additive rule of mixtures. Yang, Pound, and Derge4 showed from electrolysis measurements that the mechanism of electrical conduction in molten Cu2S, FeS, and mattes is primarily electronic. Further, they observed that small additions of CuCl suppress the electronic conduction whereupon the system behaves ionically.

Jan 1, 1960

By D. D. Pollock

The resistivity, temperature coefficient of resistance, and absolute thermoelectric properties of some binary terminal solid solutions of silver were determined. Equations are given which permit the calculation of these properties. CONSIDERABLE work has been done on the constitution and electrical conductivity of binary alloys of silver.1-l2 Some of these alloy studies are apparently complicated by doubtful chemical analyses. In some cases the limits of solid solubility are questionable. Those references which present electrical properties of binary silver alloys usually give just one particular set of characteristics such as conductivity (or resistivity). As a means of checking and extending this earlier work, an investigation was undertaken to describe and calculate the resistivity, temperature coefficient of resistance, and thermoelectric power of binary terminal solid solutions of silver. PREPARATION OF ALLOYS All of the alloys were made with silver containing less than 0.014 pet (by weight) of impurities. These materials were carefully weighed out into 225-g heats and melted in a high-frequency induction furnace. The indium, tin, and antimony systems were melted in Al2O3 crucibles, under a boric anhydride cover, and poured into split graphite finger molds. The aluminum, germanium, arsenic, lead, and bismuth alloys were melted in machined graphite crucibles, and they were also covered with boric anhydride and poured into split graphite finger molds. The alloys containing magnesium and manganese

Jan 1, 1964

By J. L. Wyatt

The electrical resistance of titanium as a function of purity and temperature was measured from —325" to 2800°F. Two points of inflection in the data plots were found, and an increase in resistance with increase in temperature above the transformation was observed. IN 1948 Greiner and Ellis&apos; reported on the thermal and electrical properties of titanium, including a study of the effect of temperature on the electrical resistance. The materials used in the research were obtained from the United States Bureau of Mines, where powder metallurgy techniques were being employed for consolidation purposes. These authors found a decreasing resistance with increasing temperature above 1625°F, and concluded that the latter temperature represented the point of transformation from hexagonal close-packed to body-centered cubic structure on heating. They reported a specific resistivity value of 55x10-6 ohm-cm, and showed that dp/dt was positive, decreasing with increasing temperature above ambient. In one of his early texts Hume-Rothery2 mentioned that certain metals, including titanium, exhibited minima in plots of resistance vs temperature. He indicated that this occurred at 212°F. Reporting many years ago on the effect of temperature on the electrical resistance of zirconium, de Boer and Fast³ showed that phase transformation in this sister metal occurred over a range of temperatures, the extent varying with its purity. Graphs of resistance vs temperature, showing transformation effects over a range of several hundred degrees, were presented for relatively impure metal. In the latter case the resistance decreased with increasing temperature throughout the region of partial phase transformation, thereafter increasing as predicted for normal metals by modern theories of the solid state. Since the quality of metal used in previous studies was substandard compared with iodide-type titanium, and in view of the fact that there seemed to be some rather unusual observations in the reported literature, it was decided to undertake a more extensive study of the thermal effects using high purity titanium, and to include temperature ranges beyond those which had been studied in order to ascertain whether or not the characteristics of zirconium would be duplicated. Experimental Materials Materials used in this investigation included commercial quality titanium (Ti-75A produced by the Titanium Metals Corp. of America) in the form of ¼ in. diam rods, and high purity iodide titanium (produced by the Foote Mineral Co.) in the form of crystal bar of irregular size. The latter was cold-swaged into rod form and machined to the desired size. Lead wires to all specimens consisted of 18 gage Ti-75A. Chemical analyses of the stock materials are given in Table I. Experimental Procedures Specimens 2½ to 3 in. in length were prepared with diameters nominally 0.15 to 0.20 in. Two holes,

Jan 1, 1954

By F. H. Spedding

CONSIDERABLE confusion exists in the literature concerning the phase transformations exhibited by the lighter rare earth metals; namely, lanthanum,1-8 cerium,1,3,5,8,9-15 praseodymium,8 and neodymium.1,8,16,10 To obtain further information

Jan 1, 1958

By B. D. Cullity, J. T. Norton, M. Telkes

THIS investigation of antimony-selenium alloys was undertaken in an attempt to find a suitable material for use in power-generating thermocouples. The chief requirements for such a material are high thermoelectric power, low electrical resistivity and low thermal conductivity. Measurements of the first two properties mentioned are usually sufficient to determine whether or not a material is suitable for use in a thermoelectric generator. As a first approximation the requirements are: 1. Thermoelectric power greater than 200 microvolts per °C. 2. Electrical resistivity less than 0.002 ohm-cm. 3. Thermal conductivity less than 0.015 watt per cm per "C. These quantities are averages for the Operating temperature range. Previous Work Experimental investigations of equilibrium in the antimony - selenium system have been summarized by Han-sen². These investigations extended from 1906 to 1921. In Hansen&apos;s judgment, the most accurate phase diagram is that determined by Parravano, in 1913 and this is reproduced in the upper part of fig. 1. The most notable parts of this diagram are the liquid miscilibility gap, extending from about 12 to 36 wt pct selenium, and the intermediate phase Sb2Se3 containing 49.3 wt pct selenium. The crystal structure of Sb2Se3 has not been determined. Pelabon3,4 made measurements of the electrical resistivity of a few antimony-selenium alloys but his investigation was not very complete. He found that the resistivity increased with the selenium content and became very large as the composition of Sb2Se3 was approached. For alloys containing less than 50 at. pct (39.3 wt pet) selenium, he found that the resistivity increased regularly with temperature. For alloys containing larger amounts of selenium, he found various results: in some cases, the resistivity decreased with increas-

Jan 1, 1951

By B. D. Cullity, J. T. Norton, M. Telkes

M. Balicki—As one who some years ago spent much time searching for an alloy with high thermoelectric power that would be suitable for heat energy-electric energy converter based on the principle of a thermoelectric pile, I would like to make a few comments touching upon that aspect of this excellent paper. The specifications which one of the authors has formulated so aptly do not appear to me as complete, and I would like to add to them the following two demands: (1) Melting point not less than 500°C and (2) elongation on 2 in. at least 5 pct. Condition 1 would insure good thermodynamic efficiency of the pile by permitting a reasonably high temperature of the hot junction and at the same time making it suitable for such application as salvage of vast amounts of energy which is lost in the form of sensible heat of waste gas leaving industrial and other furnaces. Condition 2 is also a very important one; particularly, because of the fact that all elements and alloys which exhibit attractive thermoelectric properties seem to be as a rule very brittle. The design, erection, and maintenance of a pile incorporating a brittle material in one of the most crucial parts of the converter would be a very difficult and costly affair indeed. To illustrate this point I may mention great difficulties I encountered when trying to make thermocouples of silicon. Casting of 1/4-in. rods in iron or graphite mould yielded only broken pieces which had to be welded into a bar. Such a bar had to be handled very carefully during the determinations. Raising the molten silicon by vacuum into a silica tube and solidifying it there solved the problem of stability as well as that of electrical insulation of a bar. On tests this bar (98.5 pct Si) showed dE/dT = — 275.5 microvolts per degree C vs. copper. Thermocouples made of this grade of silicon and pure nickel developed 0.39 v when temperature of the hot junction was approximately 1000°C. The possibility Dr. Gonser has mentioned of trying to impart to metals good thermoelectric properties by alloying them with silicon, has been considered. The preliminary survey which I have made was, however, disappointing. Perhaps, it will be advisable to record the results obtained (table VI), as this might save repetition of search in fields already covered.

Jan 1, 1951

By F. W. Glaser

Iron-silicon alloys have had a great influence, in many ways, in modern industry. Silicon steels have been used almost exclusively for the construction of electrical machinery, but have also become an important material for structures which benefit by the high tensile and yield strengths of this material. In elaborating on the early history of work done on iron-silicon alloys, Greiner, Marsh and Stoughton1 went back as far as 1808, and pointed to Berzelius as the first producer of ferrosilicon. During the last twenty years some very important contributions in the form of studies of the iron-silicon system, as well as of the physical properties of these alloys, have been published. In consideration of the brit-tleness and poor machinability of alloys containing more than 5-6 pct Si, commercial interests have stimulated the research done on iron-silicon alloys, but mainly in the range of 0 to 6 pct Si. Yensen2 has shown the influence of im- purities, such as carbon, sulphur and phosphorus on the magnetic properties of 2, 4, and 6 pct Si alloys. Corson3 extended his investigation of physical properties to approximately 32 pct Si, and attributed the brittleness of the high-silicon material to the particular constitutional features of the alloys. Though mentioned earlier in the literature, the effect of nitrogen on crystal growth and magnetic permeability of iron-silicon alloys has been demonstrated recently by Morrill4 and Rostoker,5 respectively. In all the above quoted investigations, except that of Rostoker,5 sand or chill casting processes were employed for the preparation of samples. A major advantage of the powder metallurgy process is that it does away with time-consuming machining in many applications. The powder metal industry is always interested in pro- ducing a finished product employing a material which has presented considerably greater difficulties in manufacture by other methods. Steinit26 described preparation and testing of various Fe-Si alloys which were produced by the powder metallurgy process for the manufacture of armatures for small electric motors or generators. While Steinitz investigated alloys up to 6 pct Si, Rostoker5 went as high as 9 pct Si. The author7 previously discussed the diffusion of iron-silicon compacts containing 6 and 10 pct silicon. It is the object of this paper to study the progress of diffusion occurring in iron-silicon alloys by electrical resistivity measurements. All samples were prepared by pressing and sintering of compacts. Iron, silicon, and Fe-Si powders of various mesh size and compositions were employed to obtain test samples. It was assumed that complete diffusion had been obtained when the electrical resistivity reached a constant value characteristic for that particular alloy. To this end, electrical resistance measurements were used to follow the progress of alloying under various conditions.

Jan 1, 1950

By W. R. Hibbard

THE classical work on the electrical conductivity of alloys was carried out by Matthiessen and his coworkers1 in the early 1860&apos;s. He attempted to correlate the electrical conductivity of alloys with their constitution diagrams, but the information regarding the latter was too meager for success. Guertler2 reworked Matthiessen&apos;s and other conductivity data in 1906 on the basis of volume composition (an application of Le Chatelier&apos;s principle with implications as to temperature and pressure effects), and obtained the following relationships between specific conductivity and phase diagrams (plotted as volume compositions) : 1—For two-phase regions, electrical conductivity can be considered as a linear function of volume composition, following the law of mixtures. 2—For solid solutions, except intermetallic compounds, the electrical conductivity is lowered by solute additions first very extensively and later more gradually, such that a minimum occurs in systems with complete solid solubility. This minimum forms from a catenary type of curve. Intermetallic compound formation with variable compound composition results in a maximum conductivity at the stoi-chiometric composition. Landauer" has recently considered the resistivity of binary metallic two-phase mixtures on the basis of randomly distributed spherical-shaped regions of two phases having different conductivities. His derivation predicts deviations from the law of mixtures which fit measurements on alloys of 6 systems out of 13 considered. Volency (Ionic Charge) Perhaps the first comprehensive discussion of the electrical resistivity of dilute solid-solution alloys was presented by Norbury&apos; in 1921. He collected sufficient data to show that the change in resistance caused by 1 atomic pct binary solute additions is periodic* in character. The difference between the period and/or the group of the solvent and solute elements could be correlated with the increase in resistance. Linde5-7 determined the electrical resistivity (p) of solid solutions containing up to about 4 atomic pct of various solutes in copper, silver, and gold at several temperatures. He reported that the extrapolated"" increase in resistance per atomic percent addition is a function of the square of the difference in group number of the solute and solvent as follows: ?p= a + K(N-Ng)2 where a and K are empirical constants and N and Ng are group numbers of the constituents. This empirical relation was subsequently rationalized theoretically by Mott,8 who showed that the scattering of conduction electrons is proportional to the square of the scattering charge at lattice sites. Thus, the change in resistance of dilute alloys is propor-t,ional to the square of the difference between the ionic charge (or valence) of the solvent and solute when other factors are neglected. Mott&apos;s difficulty in evaluating the volume of the lattice near each atom site where the valency electrons tend to segre-gate: limited his calculations to proportionality relations. Recently, Robinson and Dorn" reconfirmed this relationship for dilute aluminum solid-solution alloys at 20°C, using an effective charge of 2.5 for aluminum. In terms of valence, Linde&apos;s equation becomes ?P= {K2 + K1 (Z8 -Za)2} A where K1 and K2 are coefficients, A is atomic percent solute, Z, is valence of solvent, and Zß, is valence of solute. Plots of these data for copper, silver, gold, and aluminum alloys are shown in Fig. 1. The values of K1 and K2 are constant for a given chemical period (P), but vary from period to period. The value of K, increases irregularly with increasing difference between the period of the solvent and solute element (AP), being zero when AP is zero. The value of K, appears to have no obvious periodic relationship. All factors other than valence that affect resistivity are gathered in these coefficients. Because of the nature of the coefficients, Eq. 1 is of limited use in estimating the effects of solute additions on resistivity unless a large amount of experimental data are already available on the systems involved. It is the purpose of the first part of this report to investigate the factors that may be included in the coefficients of Linde&apos;s equation. On this basis, it is hoped that the relative effects of solute additions on resistivity can be better estimated from basic data, leading to a more convenient alloy design procedure. It is well 10,11 that phenomena that decrease the perfection of the periodic field in an atomic lattice, such as the introduction of a solute atom or strain due to deformation, will also increase the electrical resistivity. Thus, in an effort to relate changes in electrical resistivity to alloy composition, it appears appropriate to consider the atomic characteristics related to solution and strain hardening

Jan 1, 1955

By W. D. Robertson, E. Scala

Electrical resistivity of a number of pure liquid metals and alloys has been measured as a function of temperature and composition. The data show a close correspondence between the liquid and solid states with respect to thermal, structural, and compositional relationships. STUDY of diffuse scattering of X-rays by liquid metals1 has demonstrated that some degree of order persists above the melting point and that the atomic constitution of liquids is more analogous to the solid state than to a gas. Consideration of the change in various thermodynamic properties that accompanies transformation from solid to liquid leads to the same general conclusion.² evertheless, specific knowledge of the constitution of the liquid state is limited when compared with that of the solid and gaseous states owing, in part, to the difficulty of interpreting the X-ray data and in part to the indirect character of deductions based on thermodynamic data. Of the structure-sensitive physical properties, electrical resistivity of liquid metals is perhaps the most easily interpretable, particularly when comparison is made with the solid state. According to the available data, most of which was obtained prior to 1914, cubic metals exhibit a normal linear and positive temperature dependence in the liquid state and the data have been accepted without question. The divalent metals, zinc and cadmium, are apparently exceptional in that resistivity is not linear with temperature and it passes through a minimum. Mercury also exhibits a nonlinear temperature dependence but the slope is always positive. Important comparisons with magnesium could not be made at the time the following work was undertaken because the necessary experimental data were not available. Data on liquid solutions are very limited and are largely from a single source."-" Based on Bornemann&apos;s work, Norbury7 pointed out that the resistivity of liquid copper alloys appeared to be dependent on the valence of the solute and that the increase due to the solute was of the same order as in the solid state. However, large extrapolations were involved and no quantitative relationship was developed. Therefore, before proceeding with additional deductions regarding the resistivity of liquid metals and interpretation in terms of structure, it appeared necessary to verify and extend the previous work with particular emphasis on divalent metals and the effect of alloying elements of different valence in dilute liquid solutions. The present work includes: 1—A determination of the resistivity of high purity liquid magnesium, tin, indium, copper, zinc, and cadmium as a function of temperature. 2—The effect of 1 atom pct of copper, cadmium, aluminum, tin, antimony, and

Jan 1, 1954

By R. J. Wasilewski

Electrical resistivity variation with temperature was measured on a series of alloys containting up to 33 at. pct of oxygen over the range 77° to1500°K. The resistivity behavior is highly anomalous and itzconsistent with simple metallic conduction. Both composition and temperature-depended resistivity singularities were observed. A few experiments carried out on Ti-N and Zr-O alloys indicate the presence of similar anomalies. These observations, together with the published data on effects of substi-tutional alloying on the resistiuity of titanium, suggest that the anomalies are inhevent in the electron structure of this group oj metals. The existence of two-band conduction, and a significant shift of bands relative to each other with temperature and/or the electron concentration are suggested. CONSIDERABLE advances have been made in recent years in the alloy theory of simple metals. Very little, however, is known about the bonding in transition metals and their alloys.&apos; Titanium, with its relatively few electrons, may be expected to show simpler alloying behavior than the more complex transition elements. Its alloys with the interstitial elements appear particularly attractive in an investigation of bonding characteristics because of a) the simple nature of the solute elements, b) the remarkable similarity between the equiatomic structures Tic, TiN, and TiO, and c) the extensive solid solubility ranges of oxygen and nitrogen in a titanium reported.2,3 The Ti-O system was chosen for the most extensive investigation because of the relative ease of preparation of suitable specimens. Since the main object of the work was to obtain data on the bonding and its changes on alloying, electron-sensitive properties were primarily investigated. The present work describes the investigation on the electrical resistivity-temperature-oxygen content relationships. A few experiments were also carried out at selected compositions in the Ti-N and Zr-O systems. EXPERIMENTAL Materials and Method. Polycrystalline specimens were prepared in the form of hairpin strips some 50 by 5 by 0.15 to 0.50 mm by direct metal-gas reaction. This was carried out by controlled oxidation followed by a homogenizing anneal at a higher temperature. All the test specimens were fully homogenized as judged from the uniform microstructure and microhardness. To avoid preferred orientation, each strip specimen was annealed in the ß range prior to the oxidation, this procedure assuring random orientation in the strip;4 hence any texture resulting from the oxidation reaction itself affected all the specimens to a similar extent. Titanium used was of high purity (66 DPN, 10 Kg load; major impurities 0,-43G ppm, N,-70 ppm, C-25 ppm, Fe-14G ppm). The solute content of the alloys was determined by weighing, after the reaction with a known amount of oxygen. The specimens in which the discrepancy between the volumetric and gravimetric measurements exceeded 2 pct (or 0.2 mg for the low oxygen alloys) were rejected. The mean between the two measurements was then taken as the oxygen content of the alloy. Check analyses showed no measurable nitrogen contamination. All oxygen contents are given in atomic percent. Zr-O alloys were prepared in identical manner from hafnium-free crystal bar metal, cold-rolled to strip 0.25 mm thick. Ti-N alloys required very long reaction times at the maximum temperature available (1250°C). In order, therefore, to detect possible oxygen contamination, duplicate specimens were reacted in every experimental run, and one of these was analyzed both for oxygen (vacuum fusion) and for nitrogen (Kjeldahl). Only the specimens in which the check analysis showed < 1000 ppm O were then used for resistivity investigation. Since only relatively high nitrogen alloys (7.1 at. pct; i.e., 2 wt pct N,) were investigated, this oxygen contamination was considered permissible. Dc resistance was measured by the four-probe method as previously described.= The temperature was determined with a calibrated thermocouple placed in the center of the specimen hairpin. The errors in the specimen resistance values thus obtained were estimated at 1 pct due almost exclusively to the finite thickness of the potential wires and the consequent uncertainty as regards the true resistance length of the specimen. For the calculation of the specific resistance, however, no dimensional measurements could be carried out on most of the

Jan 1, 1962

By Malcolm McColl, C. A. Mead

Thin films (of mica have unique attributes that are exceptionally good for studies of high-field conduction mechamisms in thin-film insulators and the quantum mechanical tunneling of electrons from metal to metal. The principal advantages of using mica films are that the films are crystalline and the cleavage planes occur every 10Å. This property results in films whose thicknesses are integral multiples of 10Å and whose surfaces are uniformly parallel over sizable areas. Hence, very well-defined metal -mica-metal structures are possible. Furthermore, the fact that the insulator is split fro??! a bulk sample allows the index of refraction, dielectric constant, forbidden energy gap, and trapping levels and their density- to be obtained directly from measurements performed on thick samples Of mica rather than requiring that these properties be interred from the conduction characterrsties alone. In the work to he described, all the cleaving was done in a high vacuum just prior to the evaporation of metal elertrodes so as to avoid air contamination at the interfaces. Results of these studies indicate that the current through the 30 and 40Å films exhibited quantitative agreement with the theoretical voltage and temperature dependence derived by Strallon for the tunneling of electrons directly from metal to metal. Thicker films at room temperature exhibited volt-ampere curves suggesting Schottky emission of electrons from the cathode into the conduction band of mica. However, the thermal activation energy was smaller than that found from other measurements, and the experimsntal Schottky dielectric constant was larger than the square of the index of refraction. These facts would indicate that the electrons were being injected into polaron stales ill the iusulator. At low temperatures and high fields, the current through the thicker films did not exhibit the Fowler -Nordheim dependence as would be predicted by a simple extention of the theory of field emission into a vacuum. THE mechanism of electrons tunneling through insulating films has received considerable attention in the last few years due to the devices possible utilizing tunneling&apos;-4 and the success of tunneling in the study of superconductivity.5,6 Until the recent paper by Hartman and chivian7 on the study of aluminum oxide, there had been no reported successful quantitative experimental fit to the theory. Their method of fabrication necessarily results in a polycrystalline insulator, the stoichiometry of which is nonuniform from one side to the other. This structure also introduces complications to the shape of the barrier which is set up by the insulator since the insulator possesses a spatially nonuniform band structure and dielectric constant. Due to these facts an analysis of the data in terms of a pviori barrier shape is of questionable validity. The use of muscovite mica not only overcomes these disadvantages but, as an insulating thin film, provides physical properties (dielectric constant. trapping levels and their densities, forbidden energy gap, and so forth) that are identical to the easily measured values of the bulk sample. Furthermore, it is a single-crystal insulator whose cleavage planes (10Å apart8,9) provide uniformly parallel surfaces of well-known separation. This material is therefore ideally suited to the study of electron-transport phenomena. Von Hippel10 using a 6.5-µ-thick sample was the first to observe the high-field conductivity (=5 x l06 v per cm) of mica. No attempt was made to develop an empirical formula, but Von Hippel concluded from intuitive arguments that the current was being space-charge limited by trapped electrons. Mal&apos;tsev11 in a more recent investigation at high fields observed a dependence of the conductivity a on the field F of the form exp(ßF1/2). This dependence was attributed to the Frenkel effect,12,13 a Schottky type of emission from filled traps. No mention in the English abstract was made of the thicknesses of his samples or, and more important, of how well the value of ß fit Frenkel&apos;s theory. In 1962 Foote and Kazan14 developed a technique for splitting mica to a thickness of less than 100Å and observed a dependence of the current density j on the field of the form j = jo exp(ßF1/2) on a thin sample thought to be 40Å thick. Assuming that this was a Schottky emission process and that the appropriate dielectric constant for such a mechanism would be closer to a low-frequency value of 7.6, Foote and Kazan calculated from ß an independent thickness of the mica of 36Å. No further investigation was made of the phenomenon. However, the work reported in this paper indicates that the film measured by Foote and Kazan was probably 60Å thick, the error arising from the measurement of the very small metal-insulator-metal diode areas that were used, along with the diode capacitance and dielectric constant, to calculate the thickness. In the research reported in this paper, Foote and Kazan&apos;s technique was modified to cleave muscovite in a vacuum of 10-6 Torr, immediately after which metal electrodes were evaporated creating Au-mica-A1 diodes. Aluminum was chosen because of its strong adhesion to mica, as necessitated by the

Jan 1, 1965

By Goro Shimaoka, Kichizo Niwa

IN the past, the crystalline states of graphite in cast iron have been studied by many investigators. Recently several authors 1-4 have published interesting information on the crystal texture of the individual graphite grain, especially spherulites in nodular cast iron. In regard to the crystal structure of graphite, Lipson and Stokes0 howed by powder X-ray analysis that most of the crystals contain about 14 pct rhombohedra1 structure (ß-form) which differs from the hexagonal structure (a-form) in the sequence of layer stacking. Hoerni6 onfirmed the existence of the ß-form in a single crystal with electron diffraction by Kossel-Moellenstedt&apos;s method. Furthermore, Hoerni and Weigle7 found extra reflections in electron diffraction patterns, which are given by a unit cell twice as large as the usual one in the basal plane. Recently, Lukeshs observed graphite twinning and satellite reflections in his X-ray work and considered them as evidence for the existence of an orthorhombic superstructure. Owen and Street" and Matuyama" studied the structures of graphite crystals in several types of cast iron, using the X-ray powder method, and they showed that the graphite crystal contains a certain amount of the ß-form, an amount which varies with the sources of the cast iron used. The present study was made in order to secure structural information on graphitization in cast iron. Electron diffraction studies on the structure of single graphite flakes segregated from molten carbon or silicon-rich iron at 1200" to 1500°C are reported. Experimental Honkeiko pig iron (4.05 pct C, 1.59 pct Si, and 0.65 pct Mn) was used as the solvent of carbon or silicon. The pig iron was melted in an open furnace and a small quantity of metallic silicon was added to the melt at 1300°C. The melt was heated to 150O°C, and then retort black carbon or metallic silicon was added little by little. The components added to the bath contained approximately 5.0 pct C and 2.0 pct Si in the carbon-rich material, and 3.8 pct C and 5.4 pct Si in the silicon-rich iron. These two types were held at 1500°C and then cooled without graphitizing by cutting the heat sup-

Jan 1, 1958