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By Colin Baker, G. C. Smith

Investigation of the initiation and propagation of ductile failure in OFHC copper was undertaken to determine the role of nonmetallic inclusions. The effect of inclusion initiated voids on the formation of the internal cavity and the final shear separation was studied by metallographic eranzination of strained test pieces. A strain anneal technique was used to enlarge the voids under uniaxial stress conditions to elinzinate triaxial stress effects. Measurements of void size us stress and strain were made to show the point at which void im'tiation begins and becomes an important factor in the deformation process. The work of separation of copper-cuprous oxide was determined to attempt to correlate the breakdown of the matrix inclusion interface with void initiation and propagation. The zloid shape and position relative to the tensile axis suggested an interface breakdown mechanisnz of initiation. Evidence is presented that shows a basic similarity between the central cavity propagation and the 45-deg shear portions of the failure. DUCTILE fracture has been studied by a number of workers1-lo and attention drawn to the importance of hard second phase particles in the initiation of the failure. Holes formed at the matrix-particle interface can elongate by plastic deformation and then subsequently expand sideways to link up and produce a major crack. This is usually observed first in the center of the macroscopically necked region of a test-piece where the hydrostatic stresses are at a maximum. As the crack spreads sideways towards the free surface of the specimen, well defined shear zones develop from the crack tip and the final separation is along a direction at approximately 45 deg to the stress axis. This shear failure may also be associated with voids formed adjacent to second phase particles. In this way a cup and cone type fracture is produced. The stage at which separation takes place between particles and the surrounding matrix has not been clearly identified. In addition, although researchers have dealt with anisotropy of tensile behavior" as a result of material fabrication variables, not much is known about the microstructural features of aniso-tropic behavior. In the present work evidence on these points is presented in relation to the behavior of copper containing second phase particles of cuprous oxide. I. MATERIALS AND PROCEDURES EMPLOYED The material used was +-in. diam or 2-in. sq cold-drawn OFHC copper bar which contained 0.6 pct by volume of cuprous oxide inclusions. These ranged in COLIN BAKER, Junior Member AIME, formerly at -mnF of Metallurgy, University of Cambridge, Cambridge, England, is presently Research Scientist Reynolds Metals Co., Richrnand, Va. G. C. SMITH, Member AIME, is Senior Lecturer, Department of Metallurgy, University of Cambridge. Manuscript submitted June 20, 1967. IMD size from approximately 1 to 6 p in length and 1 to 4 p in width. The shape was generally slightly ovoid. Tensile tests were made on specimens having a gage length of 2.5 cm and diameter of 0.643 cm. Metallographic examination was carried out by sectioning deformed and fractured specimens; in addition fracture surfaces were examined optically and with a scanning electron microscope. Some measurements of the work of separation between copper and cuprous oxide were made, using a sessile drop technique which was a modification of that used by Kingery and umenick." The best metallographic results were obtained by using a vibratory polisher, which minimized smearing of the surface. 11. RESULTS A) Initial Experiments. Specimens from the +-in. diam rod were annealed for 2 hr at 650°C in uacuo, at which temperature complete recrystallization occurred without any change in the form of the inclusion. They were then fractured at temperatures from -190" to 600°C. Cup and cone fractures were obtained at all temperatures from -196" to 400°C. With increase in temperature there was, however, a continuous increase in the extent of the central transverse area and a corresponding decrease in the shear portion of the fracture. Above 400°C, the fractures became intergranular. Sections of specimens tested below 400°C revealed extensive small voids which were always associated with inclusions. However, the voids only reached dimensions greater than the inclusion size in the region of the macroscopic neck, where they were many times longer. Lateral expansion was found only near the fracture surface of the test pieces. As observed by Puttick, the voids were either (a) triangular holes initiated in the direction of the tensile axis and elon-

Jan 1, 1969

By P. A. Tucker, T. B. Rhinehammer, D. E. Etter, J. E. Selle

The Ce-Cu phase diagram was investigated by differential thermal analysis and rnetallography. Two congruent melting compounds, CeCu2 (817°C) and CeCua (938°C), and three incongruent cornpounds, CeCu (516°C), CeCu, (796°C), and CeCu, CERIUM and copper have been suggested as possible diluents in a liquid-plutonium fueled reactor. As part of the determination of the Ce-Cu-Pu ternary phase diagram, a review Of the Ce-Cu system (798°C), are present in this system. Eutectics exist at 28 at. pct Cu (424°C), 74 at. pct Cu (756°C), and 91 at. pct Cu (876°C). The purity of the cerium used has an important effect on the results obtained by differential thermal analysis. was considered necessary. Previous work by Hanaman was conducted with relatively impure metal: 96.7 pct Ce with 2.5 pct other rare earths and 0.5 pct Fe as major impurities. The metal had a melting point of 715°C as compared to the melting point for pure cerium of 804°C as reported by Spedding and Daane.2 Results presented in this work were obtained primarily by differential thermal analysis (DTA) and metallographic examination of slow-cooled or quenched samples.

Jan 1, 1964

By George C. Lipsey

FOR many years the mining of coal and other minerals occurring in sedimentary formation has been planned according to information obtained by diamond drilling. Placer mines have used churn drills for sampling and estimating deposits, and some metal mines have used the method either wholly or in part. The diamond drill method, therefore, although not entirely new, has come into more prominence in the last few years. Several large-scale developments now being planned or in the production stage have used this method in varying degree. This paper will describe the operations of the Howe Sound Exploration Co., Ltd. at Snow Lake, Manitoba, where a gold mine was developed and equipped for mining and milling wholly on the basis of diamond drilling results. The property has been in operation nearly 3 years, so that results can be compared with the estimates and assumptions made from the diamond drilling. In developing the subject it is necessary to outline as briefly as possible the normal method of mining, from discovery to production stage. Table I sets forth these various stages, the methods of financing, the percentage of total cost, and the relative time interval required for each section of the work. The plan presented in this table cannot be applied to all mining developments, but it gives a basis on which to work. In Stages 2 and 3 the investment is moderate, and if the property does not respond favorably the options or interests can be terminated. Stage 4 represents a sizeable investment, and it is more difficult to drop the property after this part of the operation is completed. Stages 2, 3, and 4 may be repeated several times by different groups or companies before Stage 5 is reached, but when Stage 5 has been started the total capital investment must be provided and there can be no turning back. It will be noted that there is a total of 116 units of investment in the overall cost if one company proceeds with Stages 2, 3, 4, and 5 in order. Stage 4, however, consumes time which is important when markets are being considered. Bringing a property into production when metal prices are low is much more difficult than when the prices are high, and if this stage can be set aside production is attained more quickly. When Stage 4 is eliminated the total becomes 86 units of cost for Stages 2, 3, and 5, but an adjustment of 14 units must be added to Stage 5. These 14 units represent the useable value of Stage 4. Thus Stage 4 represents an investment of 30 units if carried on before Stage 5, but 14 units if included with Stage 5. This is accounted for by the fact that development work can be accomplished more cheaply under Stage 5, since everything that is done is planned on a production basis with permanent services. Stage 4 must of necessity be governed by expenditures, and a great many temporary services, including housing and power plants, must be provided. The prospect shaft is a small one, and drifts,

Jan 1, 1952

Jan 1, 1925

By J. B. Darby

In an investigation of various equiatomic alloys of transition elements, Dwightl did not find evidence for the CsC1-type ordered structure in VMn. More recently waterstrat2 has reported the occurrence of this structure in the alloy his sample had been homogenized at 1150°C and subsequently reannealed at 725°C after crushing to powder. The purpose of this note is to confirm the existence of the CsC1-type ordered structure in VMn and to report a lattice parameter. An equiatomic alloy was prepared by arc-melting under an argon atmosphere vanadium and electrolytic manganese having a purity of at least 99.9 pet. The composition was obtained by charging an excess of manganese and monitoring the weight loss until the stoichiometric composition was achieved; the assumption that the loss during melting was due to the vaporization of manganese appears to be a valid one.' The calculated composition of the sample prepared was 49.85 at. pct V and 50.15 at. pct Mn. Specimens taken from the fractured as-cast buttons were wrapped in molybdenum foil and encapsulated in quartz capsules under vacuum; there was no evidence of a reaction between the alloy and foil. The X-ray patterns were obtained using filtered copper or chromium radiation with a Straumanis-type Debye-Scherrer camera having a diameter of 114.6 mm. The CrKa radiation is best suited for detecting the superlattice lines since it overcomes the slight difference in scattering powers of the components by making use of the anomalies in atomic scattering factor which occur when the frequency of the radiation is close to the characteristic absorption frequency of one of the elements.394 A specimen in the as-cast condition, as well as one which had been annealed for 1 week at 900°C and water-quenched, gave a diffraction pattern for the disordered bcc solid solution. However, when samples were homogenized at 900°C for 3 weeks followed by a subsequent anneal at 700°C for 6 to 7 weeks and then water-quenched or furnace-cooled, the (loo), (1111, and (210) Ka superlattice lines were observed in films taken with chromium radiation. An ao = 2.904 * 0.001 was determined by a Nelson-Riley extrapolation from a film taken with CuKa radiation. The author wishes to thank Mr. J. W. Downey and Mr. L. J. Norton for carrying out the experimental portion of this investigation. This work was performed at the Argonne National Laboratory under the auspices of the U.S. Atomic Energy Commission.

Jan 1, 1963

By H. D. Outmans

Present first-order theory for frontal stability and viscous fingering of immiscible liquids is improved by including the nonlinear terms in the equations describing conditions at the interface of the liquids. This leads to the revision of several conclusions which were based on first-order theory. They concern the growth rate and changing shape of a sinusoidal disturbance, particularly in relation to the wave number of this disturbance. Nonlinear aspects of effective interfacial tension are discussed and it is shown that this tension is not simply a positive proportionality constant in a linear relation between pressure difference and curvature at the interface. Scaling requirements are determined from the dimensionless groups which govern fingering. Gravity and interfacial tension invalidate a previously formulated conclusion that the shape of a finger after a given displacement is independent of the displacement velocity. Also, similarity of fingering (and, hence, of sweep efficiency in case of an unstable front) requires geometrical similarity of the initial disturbance in the model and the reservoir with a scale factor which is the same as the one for scaling down the dimensions of the reservoir. INTRODUCTION The critical velocity at which the transition zone in the vertical displacement of immiscible liquids becomes unstable was calculated by ill. More recently, the same was done for nonvertical displacements and it was also shown that the stability is affected by an effective interfacial tension between the liquids. 2-4 Although in the oil reservoir a stable front is always desirable from a recovery point of view, the necessary velocity may have to be so low that the corresponding production rate is not economical. In that case, a knowledge of the fingering unstable front is necessary for predicting recovery at break- through. Studies in this direction have not gone beyond the very moment at which fingering first occurs.5,6 Conclusions about stability and fingering in these references are all based on linear theory. In this theory the nonlinear terms in the equations describing conditions at the front are neglected. The usual justification for this lack of mathematical rigor is that the nonlinear terms can be made small relative to the linear terms and, supposedly, small causes produce only small effects. It has been recognized, however, that this is not necessarily true in the nonlinear problems of hydrodynamics.7 The hydro-dynamic stability and fingering of the front between two liquids, accelerated in a direction normal to the front, for instance, is strongly influenced by the nonlinearity of the boundary conditions.8-10 Since these boundary conditions are not unlike those arising in the problem of stability and fingering of the front during a slow immiscible displacement in porous media, it was thought that there, too, the nonlinear terms should be taken into consideration. A summary of the results obtained in linear theory and a comparison with experimental data precede the nonlinear theory developed in this paper. This summary serves to introduce some quantities which will be used in the further develop ment. It should also be pointed out that the method of higher-order approximation by which the nonlinear stability problem is solved has application in other reservoir studies.11 SUMMARY OF LINEAR THEORY 1. A plane interface remains stable if its velocity is smaller than a critical velocity. vc = (p2-p1)gn/(l/A2- l/A1 .........(1.1) This equation is derived for uniform flow in a thin layer inclined to the horizontal plane. The displacement takes place in a direction normal to the intersection of this layer and the horizontal plane. The undisturbed (line) interface is normal to the velocity. Fluid 1, the upper fluid (gas), is displacing Fluid 2 (oil). (VcQS would be the injection rate in cc/

By J. S. Marsh

The student of steelmaking is all too well acquainted with the fact that in many instances he must deal with data that in graphical representation exhibit the property most desirable in bird shot. This is scarcely mystifying, since the effort to establish one variable as a function of another is usually hampered by the simultaneous operativeness of two or three other factors that may be important. A large part of arriving at relationships that have the pleasing self-consistency of, say, precise measurements of thermal expansion, consists of determining what factors must be held constant-—an even larger part usually consists of collecting data for which those factors have been so maintained. It is not intended to imply that functional relationships in the physical chemistry of steelmaking are hopelessly obscure; on the contrary, it is merely necessary to be undisturbed by marked deviation of some points from a curve that otherwise makes sense. A reaction mechanism suggested by such a curve may call attention to hitherto unsuspected factors operative in the origin of the deviating points, and thus permit another step to be taken in the direction of fuller understanding. It is proposed, therefore, to suggest several empirical relationships. Even though the approach is not always rigorous, deviations caused by simplifying assumptions appear to be too small to obscure a provisional It has been appreciated for some time that the carbon-oxygen reaction in liquid steel is highly important. For example, Körber et al.,' in introducing a summary of their extensive work on steelmaking reactions, said: "... the far-reaching and truly dominating action of carbon upon the metallurgical reactions will be especially stressed ..." In "Basic Open Hearth Steelmaking"2 (hereafter BOHS, for simplicity), it is accepted repeatedly that the various slag-metal interactions are nearly always controlled by the carbon-oxygen reaction. Before further discussion of this reaction, however, it will be worth while to consider briefly the carbon-oxygen equilibrium. In BOHS (p. 483) it is stated that: When liquid iron is brought into contact with gases containing carbon monoxide it absorhs carbon and oxygen. Conversely the carbon and oxygen in the metal unite to form carbon monoxide which is evolved from the bath during the open-hearth boil or while rimming ingots are solidifying. . . . When the equilibrium pressure is one atmosphere the equilibrium-constant equation simplifies, on the assumption that the activity of each element is equal to its percentage, to a constant which has been so much used that it has acquired a special symbol m. where m = %C X %O

Jan 1, 1945

By Otto H. Henry

The purpose of this investigation was to determine the equilibrium diagram of the lithium-magnesium pair as a first step in studying the possible usefulness of these alloys as ultra-light structural materials. Review of the Literature The behavior of lithium towards magnesium was first investigated by Masing and Tammann.(1)† In order to prevent oxidation the alloys were made in iron tubes under an atmosphere of hydrogen; temperatures were measured with a glass-protected thermocouple. These investigators found that lithium and magnesium form two series of solid solutions separated by a miscibility gap between 85 and 95 per cent magnesium; that the alloys with 81 and 95 per cent magnesium showed a homogeneous structure under microscopic examination, while the alloy with 89 per cent magnesium contained two distinguishable crystallites; that the curve indicating the beginning of crystallization rises from the melting point of lithium to that of magnesium; and that no compounds of lithium and magnesium are formed. The equilibrium diagram was not plotted because no definite data were obtained for determining the solidus and the position of the miscibility gap in the solid state. The difficulties encountered in this investigation were: (1) that it was necessary to heat them as high as the melting point of magnesium in order to obtain homogeneous melts; at such temperatures the alloys attacked the glass protecting the thermocouple; and (2) that at temperatures above 400" C. the lithium united with the hydrogen to form lithium hydride, thus contaminating the alloys. By applying the same methods as those used in the lithium-magnesium system, Masing and Tammann determined the equilibrium diagram of the

Jan 1, 1934

By Nick Holonyak

Halogen vapor-transport synthesis of Ga(As,-,Px) and its preparation into laser junctions are described. Electrical and optical properties of Ga(As,-,PX) laser junctions are discussed. The present limitations in these properties are related to material proble?vzs and the very early state of development of Ga(As,-,PX), and are discussed in this context. Inhonzogeneity problems, fluctuation of As :P ratio, and problems with deep-level contaminants are described and related to Ga(As,-,PX) junction performance. Laser junctions are demonstrated which operate to wavelengths as short as 6470 A (77°K). The prospect that Ga(As,-,P,) will operate to wavelengths perhaps 100A shorter is mentioned. IN this paper we wish to describe some of the more important features of almost 1 year of experience in the preparation and properties of Ga(As,-,P,) p-n junction lasers. Because much data so far available are far from complete, some of the results still must be considered tentative and subject to correction and revision as work on Ga(As,-,P,) crystal problems progresses. Although the electrical, optical, and device properties of Ga(As,-,P,) junction lasers are understandably of considerable interest, the work to date points out that by far the most serious problems extant and those deserving first attention are problems involving the growth, doping, and perfection of Ga(As,-,P,) crystals. One of the most formidable of these is to grow Ga(As,-,P,) sufficiently free of deep levels, either due to contaminants or to structural imperfections, to allow fabrication of laser p-n junctions which can be cooled and not suffer from "freeze-out" of carriers on deep levels (and consequent double-injection behavior). In addition to the problems of growing crystals adequately free of deep levels and generally of the highest perfection, so that the best possible laser junctions can be realized, the further goal remains of increasing the phosphorus content well beyond 40 pct in an attempt to determine the practical lower wavelength limits of laser action in the Ga(As,-,P,) system. Even though the laser junctions prepared in Ga(As,-,P,) are of importance in their own right, we have considered them at this point mainly a means to study the growth and crystal problems of the material. It can be concluded that the laser junctions now available are almost completely limited by the purity and structural deficiencies of Ga(As,-,P,) crystals, and cannot be fairly compared with, for example, GaAs p-n junction lasers until Ga(As,-,P,) crystal growth has been more extensively developed. The basis for the statements above will become evident in the following sections which describe Ga(As,-,P,) crystal and junction preparation, and laser-junction properties. G(As,-,P,) CRYSTAL GROWTH As previously reported,2 we have found it convenient to employ the halogen vapor-transport process3 for synthesizing Ga(As,-,P,) crystals for use in laser junctions. Commercially available GaAs and Gap, separately prepared by halogen vapor tranport, are sealed in the desired ratio in a quartz vessel with a quantity of column-VI donor and a small quantity of metal halide which supplies the halogen for transport. The sealed ampoule, as shown in Fig. 1, is heated at a temperature in the range from 1025" to 1100°C at the position of the source GaAs and Gap. The GaAs and Gap are simultaneously vapor-transported and deposited as Ga(As,-,P,) at one end of the ampoule

Jan 1, 1964

By Charles Janin

The first successful bucket-elevator dredge to operate in California was put in comnlisvion wt Oroville in March, 1898. There had been numerous previous attempts at dredging, but noue of the earlier boats proved a success. The gold-miners in California earl3 conceived the idea of a machine to dig gravel from the beds and bars of auriferous streams that were inaccessible by the methods then employed, and it was only a few months after the discovery of gold in California that such a machine was Shipped around Cape Horn from New York to San Francisco. Thij was, however, but the forerunner of many failures in gold-dredging, and was soon at the bottoni of the Sacramento river. During succeeding years many other unsuccessful attempts mere made, and it was not until 1897 that a dredge of the single-lift bucket-elevator type mas floated on the Yuba river. This dredge was built by the Risdon Iron Works for 12. H. Postlethwaite, and would probably have been a success if it had been operated on some of the rich Ororille ground

Jan 1, 1912

By J. E. Neal, C. T. Naber, O&apos

Silicon thin films were deposited by electron beam evaporation in an ultrahigh vacuum onto (0001) and (1102) sapphire substrates. Attempts were made to correlate the structural properties of the deposited silicon films with the following: 1) substrate orientation, 2) substrate surface condition, 3) substrate temperature, and 4) deposition rate. The substrate temperatures were varied between 500° and 1000°C and the deposition rates were varied between approximately 50 and 700A per min. The following sapphire surface treatments were investigated: 1) annealing in the ultrahigh vacuum at 1200° C; 2) heating in a hydrogen atmosphere at about 1350°C; and 3) etching with silicon by evaporating silicon onto sapphire substrates heated to 1200° or 1300°C. Twinned silicon films were occasionally formed at substrate temperatures between the 800° and 1000°C on unprocessed mechanically polished substrates; however, the reproducibility and crystallinity of these films were generally poor. Single-crystal and twinned silicon films were formed at substrate temperatures between 700° and 1000°C on substrates which were silicon-etched at 1300°C prior to deposition. Fiber texture films were formed at substrate temperatures between 500° and 700°C. The (111) lattice plane of the silicon single-crystal films was parallel to the (0001) sapphire plane and the (100) silicon plane was parallel to the (1102) sapphire plane. TECHNIQUES are well-established for growing single-crystal silicon thin films on sapphire by chemical methods.'-* Vacuum epitaxial techniques have a number of advantages over chemical epitaxial techniques in the fabrication of thin film microcircuits.5 One of the most significant is that vacuum techniques are compatible with well-established procedures for forming vacuum-deposited thin-film resistors, capacitors, and interconnections. Salatna, Tucker, and young6 recently reported the formation of relatively poor crystalline-quality silicon films on sapphire by electron beam evaporation in a vacuum of about 7 x 10-7 Torr. The purpose of the investigation described here is to determine the relationships between the structural properties of silicon thin films deposited on sapphire substrates by electron beam evaporation in an ultra-high vacuum and the following: 1) substrate orientation; 2) substrate surface condition; 3) substrate temperature; and 4) deposition rate. The substrate temperatures were varied between 500° and 1000° C and the deposition rates were varied between approximately 50 and 700A per min. Two orientations of sapphire were used: (0001) and (1102). The thick-nesses of the films were between 8000 and 16,000A. The morphology and crystallinity of the deposited films and substrate surfaces were investigated by optical microscopy, electron microscopy, and electron diffraction. APPARATUS AND PROCEDURE A cross section of the ultrahigh-vacuum thin-film evaporator is shown in Fig. 1. The bell jar is stainless steel and copper gaskets are utilized at all seals. High vacuum is attained by a 6001iter per sec ion pump and a titanium sublimation pump. Sorption pumps are used to rough the system to a pressure of about 10 µ prior to starting the ion pump. Vacuums in the 10- 10 Torr range were attained after baking the system at about 250°C for 8 hr. Vacuums in the 10-8 to 10-9 Torr range were maintained during silicon evaporation. The silicon charges, which were cut from p-type single-crystal boules which had resistivities between 2000 and 4500 ohm-cm, were placed in the water-cooled copper crucible of a 180 deg bent-beam 5-kw electron beam evaporator. During evaporation, a molten zone was formed in the top center of the silicon charge, and the portion of the silicon charge in contact with the water-cooled crucible remained solid. The substrate heater, which has been described

Jan 1, 1969

By Nicholas J. Grant, Oliver Preston

A series of dilute solid solutions of a1uminum and silicon in copper, in powder -form, were internally oxidized, compacted, and extruded, to produce Cu-A12O3 and Cu-SiO2 alloys with 0.1 to 12 vol pct of oxide. Room-temperature tensile tests, creep-rupture tests from 450oto 850°C. conductivity measurements, and recrys-tallzzation studies were made. Oxide particle size and interparticle spacings were determined in an effort to relate the structure to measured strength values by means of known dispersion strengthening theories. A new dispersion strengthening theory, based on the effect of the dispersed phase on the retention of strain energy from the deformation step, zs proposed for this type of alloy, THE study of dispersion strengthening is of partitular interest in high-temperature materials technology in view of the excellent creep-rupture Properties and thermal stability achieved with SAP.1-5 Considerable effort has been devoted to this study in recent years, and encouraging results have been obtained in a number of systems.6 In general, the most

Jan 1, 1962

By G. Krauss, J. M. Thompson, H. Y. Kumagai

Boron-doped p-type and arsenic-doped n-type source materials were used to deposit thin silicon films on amorphous fused quartz substrates by cathodic sputtering in argon atmospheres. All as-sputtered films were found to have high electrical resistivities of about 104 ohm-cm, despite controlled variation of the substrate temperature from 50O to 400°C. The high resistivity of the n-type films persisted even after postdeposition heat treatments as high as 1000°C, while p-type films showed a sharp decrease in re-sistivity to values on the order of 1 ohm-cm or lower after heat treatments above 650°C. X-ray and electron diffraction, together with transmission electron microscopy of the p-type films, revealed that the improved electrical properties resulted from two distinct processes. A primary crystallization or recovery within the pains, which were approximately 200Å diam in the as-sputtered films, accompanied the initial sharp drop in resistivity at 650°C. Following this process, a secondary recrystallization or discontinuous grain growth was nucleated in films heated at 1000°C. The resulting significantly increased size of certain grains and the corresponding decrease in grain boundary area accompanied an additional decrease in resistivity after heat treatment at 1000°C. The properties of thin silicon films are of interest because of their possible application in device technology. Although evaporated silicon films on amorphous substrates1-3 and both sputtered and evaporated germanium films4-' have been studied in some detail, sputtered silicon films have not been widely investigated. It has been observed that evaporated silicon films deposited at substrate temperatures below approximately 600°C are amorphous.1,3,9,10 At substrate temperatures higher than this, the films are polycrys-talline, sometimes exhibiting a fiber texture with the fiber axis normal to the substrate surface.' Similar results have been obtained with germanium films, although in this case the substrate temperature for the amorphous to crystalline transformation is reported to be as low as 150OC.5 The mechanism of film deposition by cathodic sputtering differs markedly from that of thermal evaporation. It might be expected, therefore, that the properties of sputtered and evaporated silicon films would also differ. The purpose of our study was to determine the effects of deposition conditions and heat treatments on the electrical resistivity, structure, and composition of thin silicon films sputtered on fused quartz substrates. EXPERIMENTAL DETAILS Apparatus. A schematic diagram of the sputtering apparatus is shown in Fig. 1. The vacuum chamber was enclosed by an 18-in.-diam by 12-in.-high Pyrex bell jar mounted on a stainless-steel base plate. Access holes in the base plate were used to supply argon gas to the chamber, to allow for various electrical feedthroughs, and to provide mechanical motion to the shutter between the source material and substrate. The chamber was evacuated by a pumping system consisting of a 720 liter per sec oil diffusion pump backed by a 13 cu ft per min mechanical pump. Ultimate pressures of less than 1 x 10-6 torr could be achieved. The substrates were securely mounted on the stainless-steel substrate holder by quartz tabs held in place by stainless-steel screws. Temperatures of the substrate holder were measured by a thermocouple inserted within the holder. A quartz lamp was used to heat the holder and temperatures as high as 420°C could be maintained. Deposition Conditions and Procedure. The substrates used were polished fused quartz slides 116 by 1-12 by 3 in. and were outgassed at 200°C for 1 hr at a pressure less than 1 x 10-5 torr before film deposition. This was followed by a presputtering period of 2 hr during which the movable stainless-steel shutter was so positioned that deposition on the substrate was prevented. At a sputtering voltage of 5000 v dc and an argon pressure of 0.03 torr, the cathode cur-

Jan 1, 1967

By R. Varbanov, D. Nikolov, I. Nishkov

An interesting new flotation technique which reportedly improves mineral recovery over an extended particle size range-from 3 mm to 5 microns and below-has been developed by the Institute of Physical Chemistry, Bulgarian Academy of Sciences. Designated the "static" flotation technique, it is suited for upgrading tin, molybdenum, tungsten, uranium, gold, copper, lead, zinc, and other metallic ores. Recoverable nonmetallics include feldspar, sulfur, and phosphorite. Characteristic of the static flotation process are: •longer contact period (up to 1000 times longer between particles and bubbles, •low collision velocity and inertial forces between the contact and aeration in a thin pulp layer, • aeration without the harmful hydrodynamic repulsion upon particles below 5 microns (the pulp layer is only a few millimeters thick and rising bubbles collide with the particles either directly or in the thin foam films formed), •option to conduct the process with or without froth by film flotation at equilibrium contact angles, and • the use of inexpensive frothers and/or unstable froth with separate regulations of froth stability by hydrodynamic, ultrasonic, or electrostatic means.

Jan 10, 1979

PRESIDENTS DAVID THOMAS 1871 R W RAYMOND 1872-1874 A L HOLLEY1875 ABRAM S HEWITT 1876 T STERRY HUNT 1877 ECKLEY B COXE 1878 - 1879 WILLIAM P SHINN 1880 WILLIAM METCALF 1881 RICHARD P ROTHWELL 1882 ROBERY W HUNT 1883 JAMES C, BAYLES 1884-1885 ROBERT H RICHARDS 1886 THOMAS EGLESTON 1887 WILLIAM B POTTER 1888 RICHARD PEARCE 1889 ADAM S HEWITT 1890 JOHN BIRKINBINE 1891-1892 H M HOWE 1893 JOHN FRITZ 1894 J D WEEKS 1895 E G SPILSBURY 1896

Jan 1, 1923

By Donald W. Gentry, John F. Abel

This paper presents some of the results of a rock mechanics instrumentation program designed for, and implemented at, longwall panel 4N at the York Canyon Mine near Raton, New Mexico. The objective of this particular instrumentation program was to determine the response of the rock mass to longwall mining of a thick coal seam utilizing shield-type supports. Measurements were made in the rock along the ground surface, above the coal seam, in the coal seam, and immediately below the coal seam. Longwall test panel 4N had a total developed length of 762 m (2500 ft) and a face width of 168 m (550 ft), Fig. 1. The seam mining height in the panel area was approximately 3 m (10 ft). The average depth of overburden above the panel is 107 m (350 ft) although it ranges from 73-134 m (240-440 ft). Roof support at the face was provided by 116 Hemscheidt 320 HSL shields. These shield-type supports weigh 11.4 metric tons each.

Jan 3, 1978

By J. S. Bryner

INTRODUCTION IN the study of metallographic specimens in the electron microscope, there is need for a method of locating the same field in both the light microscope and the electron microscope. This need arises chiefly from the fact that in the electron microscope the magnification and degree of resolution are so much higher, and the field so much smaller than in the light microscope that it is often difficult, if not impossible, to identify positively what is being observed. The difficulty is increased by the fact that, because a transparent film replica of the metal surface must be used in the electron microscope, micro-constituents can be identified not by their color but only by their texture and contours. For these reasons it is desirable to obtain a series of photographs showing the same field in both microscopes in order that the appearance of common microstructures and micro-constituents in the electron microscope may be identified and catalogued for future reference. The need for a method of locating the same field in both microscopes arises also when it becomes desirable to enlarge in the electron microscope for more detailed study a particular interesting structure observed in the light microscope. Using the standard polystyrene-silica1,2 replica technique, in which the silica film replica is fished from the ethyl bromide on a 1/3 in. diam 200-mesh specimen screen, the possibilities of locating a particular area on the film in the electron microscope are rather remote. The desired structure may be obscured by the wires of the specimen screen or unrecognizable at the high magnification. A solution to the problem would be provided if a specially designed specimen screen, containing an opening which could be absolutely identified and quickly located in the electron microscope, could be fastened to the silica film replica in such a position that the desired field on the specimen would be located at the identifiable opening in the specimen screen. The design for such a specimen screen, a method for producing it, and a technique for fastening it to the silica film replica are described below. DESCRIPTION OF METHOD The Specimen Screen A simple design for a specimen screen containing an opening easy to identify and locate in the electron microscope is one with two lines of openings at right angles in the form of a cross. Such a screen is shown in Fig I. The opening at the center of the cross is identified easily and can be located quickly in the light microscope and in the objective image of the electron microscope. The specially designed specimen screens for this work were produced in quantity by electroforming. On both sides of a polished strip of copper 1 X 3 X 1/8 in., twenty patterns of the cross of openings were punched with a diamond point micro-hardness tester, using a load of magnitude

Jan 1, 1948

By E. Mcl. Tittmann

Deep-seated human instincts urge us to positively mark the passage of time. We celebrate the passage of each year. Years give way to decades, and decades to half centuries and centuries. At all these mileposts we are inclined to pause, take a look around and catch our breaths before embarking on the next leg. We are at such a point now and this meeting I am sure will give direction to the road ahead into the decade of the seventies. In looking around at this point, 1979, it is obvious to all of us that the environment in which we must mine, mill, smelt and refine lead and zinc has radically changed. These changes have, of course, occurred over a long period of time. They have, however, all been in the same general direction. They have all had the same motivation. The period of greatest contrast is probably the fifteen years just before World War II and the fifteen years following the end of that war. I thought that I might review briefly with you what seems to me to be four of the more important changes that have developed since World War II that profoundly affect our activities in the lead and zinc industry. I mentioned before that all these changes have been in the same direction; that is, they have all tended to restrict our freedom of action in pursuing our objective of producing lead and zinc on a competitive basis at a profit. Consequently, in discussing them you may think that I am merely viewing with alarm. This is not the intent. This is merely supposed to be an objective analysis. I think it appropriate before discussing these trends in detail to examine the position of lead and zinc today.

Jan 1, 1970

By Donald W. Gentry, John F. Abel

This paper presents some of the results of a rock mechanics instrumentation program designed for, and implemented at. longwall panel 4N at the York Canyon Mine near Raton, New Mexico. The objective of this particular instrumentation program was to determine the response of the rock mass to longwall mining of a thick coal seam utilizing shield-type supports. Measurements were made in the rock along the ground surface, above the coal seam, in the coal seam, and immediately below the coal seam. Longwall test panel 4N had a total developed length of 762 m (2500 ft) and a face width of 168 m (550 ft), [Fig. 1]. The seam mining height in the panel area was approximately 3 m (10 ft). The average depth of overburden above the panel is 107 m (350 ft) although it ranges from 73-134 m (240-440 ft). Roof support at the face was provided by 116 Hemscheidt 320 HSL shields. These shield-type supports weigh 11.4 metric tons each.

Jan 1, 1979

By John D. Meahin

THE use of digital methods for generating crystallo-graphic data is well-established and many programs are now available. Transmission electron microscopy usually requires a knowledge of the electron diffraction pattern which is obtained by plotting a planar section through reciprocal space. With cubic symmetry these sections are very easily produced, but with hexagonal and lower symmetry systems considerably more labor is involved. Johari and Buchanan1 have written a Fortran program for generating standard projections and along similar lines we have produced a short but completely general program for generating any section through reciprocal space. The required inputs are the lattice parameters and angles for the real crystal. The Miller indices of the direction [U, V, W] parallel to the electron beam are then specified and the program will generate the Miller indices of the plane normals perpendicular to [U, V,, W] up to some specified integer. A subroutine can be inserted to test for forbidden reflections if desired. We have used such routines for fct and hcp crystals. As each permitted index is generated it is printed or punched out and no storage arrays are utilized in the computer. The normal diffraction pattern corresponds to the zero-order Laue zone, but with thin crystals or crystals of large lattice parameters the higher-order Laue zones may contribute to the diffraction pattern. Accordingly the program will generate successive Laue zones and project them onto the zero-order zone. The output of the program first lists the zone axis [C, V, W] and the Laue zone, and then gives a list of permitted reflections and the corresponding XP and YP coordinates of the reciprocal lattice point in angstroms-'. In addition, ZP, the perpendicular distance of the reciprocal lattice point from the (U, V, Ur) plane in reciprocal space is given, as is the reciprocal interplanar spacing. In the case of the zero-order Laue zone ZP is zero. A diffraction spot from the higher-order Laue zones will be very slightly displaced from the computed coordinates as its position in an actual pattern is given by projection along the diffracted beam2 and not along [u, V, w]. For any given electron wavelength this correction could be readily incorporated into the program, but as it only amounts to -1 pct it was decided to leave the program in its most general form, i.e ., a computation of points

Jan 1, 1970