Search Documents

By John F. Lundeberg

CLAUSS1 observed that if isothermal creep data could be approximated as straight lines on a log stress-log time plot, a relationship existed that could be expressed as log t = m log s + b [ l] where t = time,

Jan 1, 1965

By R. V. Sara

Determination of the Hf-C phase diagram was conducted primarily by metallographic and X-ray diffraction studies on appropriate alloys. The only intermediate phase observed in this binary system was HfC. This phase was found to be homogeneous between 34.0 and 48.0 at. pct C at 2200°c and between 36.0 and 49.3 at. pct C at 3150°C. The lattice-parameter variation was also determined for HfCI-, compositions prepared at 2200° and 3150°C. The most most refractory composition, with a melting point of 3830°c, was established at 47.5 at. pct C from melting-point data. Solidus temperatures of 2240' and 3150°C occur on the high-kafnium and high-carbon sides of the monocarbide, respectively. The invariant point between HfC and carbon is located at 66.0 at. pct C, whereas the 2240°C solidus corresponds to the peritectic temperature at which hafnium is formed from HfC and hafnium-rick liquid. Hafnium has a melting temperature of 2208°C and is capable of taking carbon into solution to the extent of 10.5 at. pct at this temperature. ALTHOUGH the Hf-C phase diagram has not been previously evaluated experimentally in its entirety, the belief has been that the general configuration would resemble the chemically similar Group rV carbide systems, Ti-C and Zr-c.' These binaries are characterized by a single carbide phase with a simple NaC1-type structure which is maintained over wide compositional ranges. This family of carbides has high thermal stability that increases substantially as the atomic number of the metal component increases. This trend characterizes HfC as one of the highest melting materials. According to Agte and Alterthum,2 the melting point for this monocarbide is 3890°C, a value that has been quoted quite extensively for the past several decades. Recently, in repeating the work of Agte and Alter-thum, Adams and Beall3 determined the melting point of HfC to be 3895°C. A significant departure from the commonly accepted version of the Hf-C system was reported by Avarbe and his coworkers,4 who proposed that there is an extreme stabilization of a hafnium in a narrow field to 2820°C, above which it melts peritectically to form HfC and liquid. Their study was also concerned with the melting temperature of various HfCI-, compositions, but the peak melting point was taken from the work of Agte and Alterthum. Avarbe and his associates were not concerned with the high-carbon region of the system. However, three widely varying temperatures have been reported for the HfC-C solidus by other investigators. Cotter and Kohn5 observed approximately 2800°C; Portnoy et al.' reported 3260°C; and, more recently, Krikorian7 indicated 2915°C. Equally as uncertain is the solidus between hafnium and HfC. As noted above, Avarbe et al. report a peritectic temperature of 2820°C, Krikorian7 measured 2150°C, and Benesovsky and Rudy' estimated 2000°C on their diagram. I) EXPERIMENTAL PROCEDURE The starting materials for this study consisted of reactor-grade hafnium hydride obtained from Fair-mount Chemical Co., Newark, N.J., hafnium carbide supplied by Wah Chang Corp., Albany, Ore., and Union Carbide spectroscopic-grade graphite, SP-1. The graphite analysis indicated impurities at levels of only 0.5 ppm or less. According to the suppliers, the hydride and carbide contained the typical impurities listed in Table I. The samples required for these studies were prepared by dry blending either graphite and hafnium hydride or hafnium hydride and hafnium carbide powders for approximately 5 min in a "Spex Mixer Mill". The latter combination was used only for preparing several samples in the HfC1-, melting-point studies. Small pellets, varying between 3/16

Jan 1, 1965

By Edna A. Dancy

Jan 1, 1965

By Fred T. Towne

Recent developments in fine grinding by the means of mechanical impaction are the result of continuing improvements in modern machine construction. This is especially true when related to the bearings and mechanically operated parts of impact mills. These improvements allow manufacturers to increase the speeds of the impacting members Most of the more common forms of size reductions, such as percussion, pressure, friction and sectioning, or cutting were at one time accomplished by human hands. These actions were transferred to machinery. Originally of limited application, their use widened as industrial materials and construction became more sophisticated.

Jan 1, 1965

By William H. Engelleitner

Agglomeration by balling in cylindrical or shallow pan devices dates back to the early part of this century. The first sintering tests conducted by Dwight-Lloyd on nonferrous ores included a mixing step for ore, flux and fuel carried out in a deep pan device similar to the balling pans, or discs, presently in use. Further work directed mainly toward sintering of ferrous and nonferrous ores always included a preparatory step, usually referred to as mixing, agglomerating or green-balling of the ingredients. In the late forties and early fifties two methods of particle preparation prior to firing were in general use. In Europe the balling pan was used predominantly, both as a mixer and as a pelletizer. In the United States many pilot plants and semi¬commercial plants used balling drums. When the first iron ore pelletizing plants were built in this country, the most frequently used device for green-balling was the cylindrical drum. At the same time, the pan device was used both in Europe and the United States for many other materials such as fertilizer, cement, flyash, alumina and copper concentrates, as well as to mix the feed for sinter machines. The difference between these two balling devices - -the drum and the disc - has been the subject of much discussion and is well covered by several papers included in the 1962 publication "Agglomeration' issued by AIMS, based on their 1961 International Symposium held in Philadelphia. (1)

Jan 1, 1965

By C. F. Giermak

Over a considerable period of time great interest has been shown in selective dry concentration of fine ferromagnetic particles, although it is only recently that new permanent magnetic materials have been made available to permit building of such permanent magnetic separators. It is well known that the conventional drum separator does' not efficiently separate fine materials. The centrifugal force on any drum acts in accordance with the particle size and gravity, which may beat varying magnitude-.opposite to the magnetic force, especially when the material is not closely sized. The Magnetic-Mechanical Separator (MMS) is designed for the concentration of fine, unsized magnetic materials where the percentage composition of magnetics to nonmagnetics, or the nature and texture of the materials, is such that its unique agitation and shake-out action with no centrifugal force provides greater efficiency than is obtainable by conventional magnetic separation equipment. This machine consists of a complete double belt conveyor unit with a premagnetizing Axial Pole Agitating Pulley at the feeding end of the lower conveyor belt and a special agitating concentrator magnet above the lower belt of the upper conveyor.

Jan 1, 1965

Vast quantities of cosmic material, ranging in size from fine dust to large meteorites and planetoids, have been colliding with and accumulating on the earth since its origin 4.5 billion years ago. There are less than twenty well preserved meteorite craters and Jess than thirty fossil craters or astroblemes on the present face of the earth. On the moon, there are approximately 200,000 craters on the visible face alone -the largest crater being 132 miles in diameter and attaining a depth of 16,000 feet. Making allowances for the different physical conditions on the moon and assuming that these lunar features are of impact origin, the indifference is that, since primeval time, large numbers of celestial objects have also encountered the earth, but that both the topographic expression of the impact and the objects themselves have been destroyed by weathering and erosion. It may be reasonable to suggest that additions of cos-mic bodies have materially altered the chemistry of the earth's crust from place to place and that the impact of large meteorites and asteroids has created zones of weak-ness in the crust that could be the center of magmatic intrusion and mineralization.

Jan 1, 1965

By M. N. Shetty, A. C. D. Chaklader

RECENTLY, it has been demonstrated that a considerable densification and interparticle bonding can be achieved if a pressure is applied to a powder compact while the material of the compact is undergoing either a decomposition reaction' or a polymorphic transformation.' The term "reactive hot pressing" has been coined to identify this process in which a phase change is combined with pressure to achieve interparticle bonding. This process is based on a principle which postulates that there is an enhanced reactivity and mobility of the molecular species at the phase-transformation temperature and this effect is utilized for interparticle bonding in powder compacts. This note summarizes the results obtained in an attempt to utilize this technique to produce ceramic-metal composites. In this case, a decomposition reaction of a compound (which after decomposition yielded an oxide) was used to achieve interparticle bonding in ceramic-metal composites. The reactive hot pressing was carried out in a Phillips induction heating unit, using either a graphite or a high-temperature steel die which functioned as both the susceptor and the hot-pressing component. The die was heated to the desired temperature in a helium atmosphere. All cermets produced by this technique were based on alumina as the ceramic phase. Different metal phases such as iron, copper, and chromium were used to study the effect of varying the metal phase on the properties of the composite. a Mono-hydrate (Boehmite) was mixed with different proportions of metal powders (-325 mesh) in dry condition in a mortar and pestle. No special precautions were taken for proper mixing. The mixtures were then compacted into a cylindrical form having an approximate dimension of 1 cm in diameter and 1 cm in height. For this compaction an ordinary

Jan 1, 1965

By R. G. Ward, P. L. Sachdev

Using an improved maximum bubble pressure technique, the densities of iron silicates at 1400°C have been measured under nitrogen. At the wiistite composition the density has been measured by bubble-blowing experments with both argon and nitrogen and calculated from the measured volume of a known mass of melt under nitrogen. The densities under nitrogen are significantly different from those measured under argon for melts containing less than 28 wt pct SiO2. THE constitution of liquid slags is not well understood, largely because no single property or parameter can be measured which gives conclusive evi- dence of the types and packing of the ions present. Of the many property measurements which can provide information leading to a picture of the constitution of slags, density gives the most direct evidence and has been studied extensively. The work reported here is part of a program of study of densities in multicomponent melts in which the iron oxide-silica system is the solvent. These melts are important as they are fundamental to basic steelmaking, and they allow the study of basic silicate compositions which have hitherto been largely neglected. As considerable disparity exists

Jan 1, 1965

By Warren E. Morrison

Stimulated by 4 years of continuous economic growth without inflation, demand for energy in the United States reached an alltime high in 1964. Total value of production of goods and services (gross national product--GNP) for the year was $629 billion, an increase of 6.8 percent from 1963. Allowing for price changes based on 1958 dollars, the gain in real terms was 5 percent. In 1964 the Federal Reserve Board Index of Industrial Production stood at 132, a rise of 6.2 percent. With the impetus provided by personal income and corporate tax reductions during the year, aggregate wages, profits, and consumption reached record levels. Even the persistent balance of payments problem improved. Against this background the national consumption of commercial energy increased 4.2 percent. Energy needs continued to be met largely from domestic resources with imports, mainly crude petroleum and refined petroleum products, accounting for but 7 percent of the total. Mineral energy resources, namely gas, coal, and petroleum, contributed 96 percent of the input of energy into the economy during the year. The remaining 4 percent came from hydropower and nuclear power.

Jan 1, 1965

By B. G. Zambre, G. A. Parks, J. N. Roco

Automatic controls have long been a fact of technological life. Some understanding of control systems is rapidly becoming essential to the competence of mineral engineers. Students in undergraduate mineral engineering curricula, however, should not be expected to develop proficiency in the design and interpretation of control systems. They should be provided the opportunity to absorb some of the fundamental concepts and cant of such highly specialized peripheral fields as automatic controls. The present paper describes the components of a simple, flexible and relatively inexpensive control system designed primarily for the use of students in independent study projects. The control system is based on a continuous on-stream optical analyzer analogous to commercially available systems using X-Ray fluorescence analysis. The components can be easily adapted to control other separators and separations. As described here, they have been arranged to control the magnetic separation of a magnetite bearing specular hematite from quartz to produce a quartz product of fixed hematite content using a minimum of power. The control system consists of the magnetic separator* with a vibrating feeder, † a sampler, an optical scanner, a differential amplifier, a millivolt recorder ‡ and a motor driven, metered variable DC power supply for the separator electromagnet. An optional magnet current recorder is useful. The system as arranged for closed loop control is illustrated in Fig. 1. The elements of the loop are identified in automatic control jargon in Table I. The same components can be easily adapted for use in other control modes.§.1 * A Carpco Induced Roll High Intensity Magnetic Separator (Carpco Manufacturing, Inc., Jacksonville, Fla.); modified for external magnet power supply. A Jeffrey-Traylor Vibrating Feeder Type 1B (Jeffrey Manufacturing Co., Columbus, 0.). A Beckman Laboratory Potentiometric Recorder (Beckman Instruments, Inc., 619-A) fitted with adjustable limit switches for external circuit control (Beckman Instruments, Inc.. 71980). Terminology is taken from ref. 1. CLOSED LOOP OPERATION The separation is monitored through the optical reflectivity of the tailings stream which is proportional to the hematite content, THA. The difference, A, between the measured analysis (actually a proportional voltage) and a reference analysis (also a proportional voltage) is continuously recorded. The separation is controlled through changes in the electromagnet current, I, supplied from a motor driven variable source. The two primary variables, ? and I, are linked through adjustable limit switches on the

Jan 1, 1965

By James F. Devine

This Bureau of Mines report describes tests conducted at three sites to determine if, and to what extent, a vertical presplit fracture plane placed between a blast point and detection point will reduce vibration levels. Statistical analyses indicate that the presplit fracture plane did not reduce the vibration level.

Jan 1, 1965

By R. W. Heckel

The growth and shrinkage rates of second-phase particles of various size distributions are analyzed in terms of five mathematical models. These models apply to various forms of diffusion-controlled growth (one model) and interjace-controlled growth (four models). The expression for diffusion-controlled growth assumes local equilibrium at the interface between the second Phase and the matrix and through the choice of the proper flux area perrnits the definition of minimum diffusion-controlled growth kinetics. The interface-controlled kinetics models consider the situations where the rate-controlling step occurs at either the interlace undergoing solution or the interface undergoing deposition. In addition, each of these interface-controlled kinetics models is analyzed for interface reaction rates which are independent of the thermodynamic activity gradient across the interface or proportional to the gradient. THE variation of the size distribution of second-phase particles in a solute-saturated matrix has been a stimulating topic for many years. Research has been carried out in this area for situations where the matrix was either liquid or solid. It is well-understood that the over-all process results in an increase in the average particle size, a decrease in the total number of particles per unit volume, and a net decrease in surface area. Greenwood1 has presented a mathematical model based upon the mass balance existing between growing and shrinking particles. His analysis is stated in terms of Fick's First Law using concentration gradients set up between particles of different size as a result of the effect of surface curvature on solubility. Greenwood's analysis indicates that the mean particle size should increase approximately as the cube root of time. Asimow2 has shown that several of the simplifying assumptions employed by Greenwood may be eliminated from this diffusion-controlled model with little increase in complexity. Lifshits and Slyozov3-5 have also considered the growth-shrinkage problem involving diffusion-controlled kinetics. Their analysis was extended to include the effects of interacting particles ("kinetic approximation"), particle shape, and elastic strains. These authors also show that the mean particle size varies as the cube root of the reaction time. wagner6 has formulated expressions for both diffusion-controlled kinetics and interface-controlled kinetics in the growth-shrinkage problem. Wagner's diffusion-controlled kinetics is based upon the same form of mass balance using Fick's First Law as used by others and is shown to be applicable to situations where kr >> D (k is the interface reaction constant, r is the particle radius, and D is the diffusion coefficient). This analysis also yields a mean particle size which varies as the cube root of time, in agreement with other workers. Wagner also developed interface-controlled kinetics to handle kr « D. This model was based upon the fact that the interface reaction rate is proportional to the interface area. Wagner assumed that the rate was also proportional to the thermodynamic activity difference, ?a, existing across the interface. Thus, the specific reaction rate at the surface of radius r was defined as k • 4nr2 . ?a. It is the purpose of the present paper to reconsider the processes of diffusion-controlled growth and interface-controlled growth in the variation of particle-size distributions as a function of time at constant second-phase volume. The analyses are formulated in a manner which permits data obtained

Jan 1, 1965

By F. V. Lenel, G. S. Ansell, M. J. Salkind

An experiment is described in which the growth of interparticle necks in an array of loose spherical silver powder at temperatures near 300°C was determined by measuring changes in the electrical resistance of the array. The activation energy for neck growth of contacts was derived by abruptly changing temperature and noting the change in the rate of neck growth. Since the experiments were run under an external load, the changes in activation energy with stress could he determined. The activation energy was found to decrease rapidly with increasing stress. It is concluded that the material transport in the experiments is one of plastic flow by dislocation motion. The variation of activation energy with stress is typical for cross slip of dislocations, an important material transport mechanism in the temperature range investigated. THE process in which powder compacts or aggregates of loose powder are held at an elevated temperature under an external load is called hot pressing or sintering under pressure by powder metallurgists. In this investigation the early stages of this process as applied to loose spherical silver- powder aggregates were studied. The powder particles were approximately 100µ in diameter and the temperature was near 300°C, i.e., below one half of the melting point of silver in degrees Kelvin, where volume diffusion is not expected to contribute to sintering. In the process, the contact or neck areas between powder particles grow. Since this involves plastic deformation of the particles under a constant external load (even though not under constant stress) it would be termed creep by mechanical metallurgists. On the other hand, the growth in neck area observed in compacts or loose-powder aggregates held at elevated temperature without the application of an external load is termed sintering by powder metallurgists. During sintering the major driving force is the stress due to surface tension. However, even when no load is placed on the compact or powder aggregate, an external stress, i.e., gravity, plays an important role in sintering in addition to those stresses arising from surface tension, as was shown in two previous investigations.'" It is therefore postulated that no sharp dividing line can be drawn between the phenomena of "creep" and "sintering". Different material transport mechanisms may be involved in either of these phenomena, but they will depend upon the temperature and the level of stress, but not necessarily upon the nature of the driving force: surface tension or external load. At the low temperatures of this investigation, an external stress much higher than the stress due to surface tension is necessary to obtain measurable rates of neck growth. In order to avoid misunderstanding this phenomenon will be called "creep". The rate of growth in contact area in the loose silver-powder aggregates was determined by meas-

Jan 1, 1965

By Helmut Lerchs

An open-pit mining operation can be viewed as a process by which the open surface of a mine is continuously deformed. The planning of a mining program involves the design of the final shape of this open surface. The approach developed in this paper is based on the following assumptions: 1. the type of material its mine value and its extraction cost is given for each point; 2. restrictions on the geometry of the pit are specified (surface boundaries and maximum allowable wall slopes); 3. The objective is to maximize total profit-total mine value of material extracted minus total extraction cost. Two numeric methods are proposed: A simple dynamic programming algorithm for the two-dimensional pit (or a single vertical section of a mine), and. a more elaborate graph algorithm for the general three-dimensional pit. ASURFACE mining program is a complex operation that may extend over many years, and Involve huge capital expenditures and risk. Before undertaking such an operation, it must be known what ore there is to be mined

Jan 1, 1965

By R. S. Wagner, W. C. Ellis

A new mechanism of crystal growth involving oapor, liquid, crnd solid phases explains many observations of the effect of implurities in crystal growth from the vapor. The role of the impuuitq is to form a liquid Solution with the crystalline tnalerial to be grown from the vapor. Since the solution is n prefevred site for deposition firorti the uapor, the liquid becorrles supersaturated. Crystal growth occurs by precipitatzon from the supersaturated liquid crt tlie solid-liquid zntevfnce. A crystalline defect, such as a screw dislocation, is not essetztial for VLS (vapor -liquid-solid) growth. The concept of the VLS mechanism is discussed in detail with reference to tire controlled growth of silicon crystals using gold, platinum, palladium, nickel, silver, or copper as an implurity agent. RECENTLY a short communication' described a new concept of crystal growth from the vapor, the VLS mechanism. In this paper we present a detailed description of the process and its application to the growth of silicon crystals and we discuss its relevance to existing concepts of .'whisker" crystal growth. Crystal growth from the vapor is usually explained by a theory proposed by Frank2 and developed in detail by Burton, Cabrera, and Frank.3 In this theory a screw dislocation terminating at the growth surface provides a self-perpetuating step. Accommodation of atoms at the step is energetically favorable, and is possible of much lower supersatu-ration than required for two-dimensional nucleation. Crystals of a unique form resulting from aniso-tropic growth from the vapor are "whisker" or filamentary ones. Such crystals have a lengthwise dimension orders of magnitude larger than those of the cross section. For most filamentary crystals both the fast-growth direction and directions of lateral growth have small Miller indices. The special growth form for a whisker crystal implies that the tip surface of the crystal must be a preferred growth site. sears4 proposed that, according to the Frank theory. a whisker contains a screw dislocation emergent at the growing tip. Such an axial defect provides a preferred growth site and accounts for unidirectional growth. The hypothesis was extended by Price. Vermilyea. and Webb," still implying the presence of a dislocation at the whisker tip. They postulated that impurities arriving at the fast-growing tip face become buried while those arriving on the surface of slow-growing lateral faces accumulate and thereby hinder growth. These considerations led to a whisker morphology. There is increasing evidence that most whisker crystals grown from the vapor are dislocation-free. Webb and his coworkers6 searched for an Eshelby twist7 in zinc? cadmium, iron. copper, silver, and palladium whisker crystals. They found unequivocal evidence for an axial screw dislocation in only one element, palladium. However, not every palladium crystal examined contained a dislocation. Observations with the electron microscope have failed to show dislocations in whisker crystals of zinc, silicon.9 and one morphology of AlN.10 Since many whiskers are completely free of dislocations, an axial dislocation does not appear to be required for whisker growth of many substances. A significant advance in understanding whisker growth has been a recognition of the need for impurities. This requirement has been clearly demonstrated for copper,11 iron,13 and silicon9-1 whiskers. For silicon, detailed studies proved conclusively that certain impurities, for example, nickel or gold, are essential. Another pertinent phenomenon which has received little attention is the presence of a liquid layer or droplets on the surface of some crystals growing from the vapor. Crystals in which this has been observed include p-toluidine,14 MoO3,15 ferrites,16 and silicon carbide.'" The liquid layers or globules were considered to be metastable phases, molecular complexes, or intermediate polymers originating from condensation of the vapor phase. The possibility has been suggested that the halide being reduced is condensed at the tip18 or adsorbed on the surface11 of a growing metal whisker, for example copper. The literature on whiskers discloses illustrations of rounded terminations at the tips. These appear. for example, on crystals of A12O3,19,20 sic,21 and BeO.22 For BeO, Edwards and Happel suggested that during growth of the whisker the rounded termination consisted of molten beryllium enclosed in a solid shell of BeO. A recent paper9 on the growth of silicon whiskers contains many observations pertinent to an understanding of the mechanisnl of whisker growth. These observations are summarized as follows. 1) Silicon whiskers are dislocation-free. 2) Certain impurities are essential for whisker growth. Without such impurities the silicon deposit is in the form of a film or consists of discrete polyhedral crystals.

Jan 1, 1965

By William Klement

THIS note reports the results of some attempts to metastably extend the primary solid solubilities of tin, antimony, and silicon in silver by rapidly quenching these binary alloys from the melt. The procedures employed for alloy preparation, quenching, and Debye-Scherrer X-ray diffraction measurements have been described elsewhere. The lattice parameters obtained for the fcc structures in Ag-Sn and Ag-Sb alloys are presented in Fig. 1, together with the results of Owen and Roberts.4 Alloy compositions are believed to be within ± 0.2 at. pct on the basis of negligible weight losses during preparation and reproducibility of the lattice spacings. Diffraction lines from hcp phases were also detected: the relative visual intensities of the fcc (200) and hcp (10.2) lines were estimated as shown in Table I. The intensities were m for the (200) and w for the (10.2) in a quenched 13.6 at. pct Sn alloy: a lattice spacing for the fcc structure could not be reliably obtained, however. As seen from Fig. 1, the lattice parameters vary linearly with composition up to 8., at. pct Sb and 13." at. pct Sn, respectively, which may be compared with the maximum equilibrium solid solubilities5 of 7.2 at. pct Sb and 11.5 at. pct Sn, respectively. The presence of the hcp phases, which were found together with the fcc phases, is a consequence of the competition1,3 in the nucleation and growth processes during solidification. Both the fcc and hcp phases must be of the same composition for those alloys in the range where lattice parameters increase linearly with solute concentration. Despite much effort with quenched alloys of several silicon concentrations, it has not been possible to obtain lattice spacings of sufficient precision to establish the variation of lattice parameter with composition or the maximum metastable solid solubility: the equilibrium data5 suggest little primary solid solubility of silicon in silver. For alloys containing less than 16 at. pct Si, the Si (111) diffraction line was not observed. For alloys containing 10 to 25 at. pct Si, faint low-angle lines were detected and these could be indexed as the (10.0), (00.2). and (10.1) reflections of an hcp structure with a = 2.87 + 3A. c = 4.52 ± 3A, and c/a = 1.57 ± 2. The 16 at. pct Si alloy was quenched to, and examined at. liquid nitrogen temperatures without any change observed in the proportion of the hcp phase. These experiments were jointly supported by the Atomic Energy Commission and Office of Naval Research under a program directed by Professor P. Duwez. The assistance of H.-L. Luo and A. Abu-Shumays is acknowledged. as is the support afforded

Jan 1, 1965

By John Brownson

Ge-Si N-N heterodiodes hare been built recently which show promise as high-speed logic devices. Low-resistivity germanium is deposited on silicon substrates held at temperatures above the germanium melting point and an alloyed heterojunction formed. The diodes are fabricated from this material using conventional mesa techniques. Over-all device qualify has been greatly improved by the use of epitaxial silicon substrates, that is, a subsirale consisting of a film of thin, high -resistivity silicon on a thicker Piece of low-resistirily silicon crystal. A semimpirical device design equation has been devised which predicts switching performance fairly well within the range of resistivitics and geometries employed. Switching times 01 0.9 ns and PIV 's of —20 v are typical of the better 10-ma diodes. Switching times as low as 0.5 ns have been observed for 10-ma diodes and as low as 2.8 ns for 200-ma diodes. With further development it should be possible to improve switching speed by a factor of four. IN our laboratory, Ge-Si heterodiodes have been built recently which show promise as high-speed logic devices. The diodes have been built using a process reported in some detail in an earlier publication.' The process in short involves alloying a thin film of low-resistivity germanium into a silicon substrate. the germanium having been transported and deposited by the well-known Theuerer halide reduction process.2 This process contrasts with that reported earlier by Oldham who used an essentially conventional direct epitaxial deposition technique.3 Oldham's process, unlike ours, requires cleavage of the silicon sample inside the reactor furnace the instant prior to deposition. Our process has the advantage of yielding large-area macro-scopically plane heterojunctions. Heterodiodes in general have several interesting properties. Without attempting to summarize the theory of heterojunctions.4 two of these properties which have direct relevance should be mentioned. First, N-.V and P-P heterojunction diodes rectify alternating current. Provided that either the band gap or the electron affinity of the two materials is different (which in general is the case), electronic barriers will exist in the junction band structure. When the device is sufficiently forward-biased, the barriers shift so as to permit current flow, and when it is reverse-biased. the barriers block current flow. Second, for N-N and P-P heterodiodes. the foward-conduction process involves majority carriers only. Consequently. when such a device is turned off. there is no minority-carrier storage and hence the diodes switch on and off quite rapidly. As we have reported earlier. N-P and N-N Ge-Si heterodiodes have been built in this laboratory. As one would predict from theory, the N-P heterodiodes were rather slow in turning off while the N-N's were quite fast. Similarly, the turn-off time of the N-P's increased rapidly with forward current while that of the N-N's was independent of forward current. Both N-N's and N-P's were moderately photosensitive. Photocurrents resulting from normal room illumination were as high as 1 µa at 1 v for small-area devices. The most disappointing parameter of the early N-N devices was reverse leakage.' The reverse characteristic was invariably "soft" and leakage at only several volts reverse bias was intolerable. The reverse characteristic was greatly improved by using higher-resistivity silicon substrates. Leakage becomes large at voltages about one third of the avalanche voltage one would expect of a P-N homo-junction formed on silicon of the same resistivity. Thus leakage could be reduced to reasonable limits by using unconventionally high-resistivity silicon. Medium-power diodes formed on 30 ohm-cm substrates leaked typically 15 to 50 µa at 100 v reverse bias. The use of high-resistivity silicon substrate material, however, created a new problem. In order to have an acceptable forward-conductance characteristic. the area of the diodes had to be increased. With this increase in area, the capacitance increased. Switching time for N-N heterodiodes is essentially a linear function of capacitance. Thus when the resistivity was raised. so was the switching time. A SEMIEMPIRICAL HETERODIODE DESIGN EQUATION As a result of our experiments with a limited range of diode geometries and resistivities. a semi-

Jan 1, 1965

By Foster Fraas

The Bureau of Mines investigated a method for calculating values of adsorption energy; the goal was to devise an equation consistent with experimental data accumulated in the investigation of adsorption as related to ore separation processes. Numerical identification of the constants of a previously formulated equation provided an equation by which values of adsorption energy could be calculated. Values thus calculated checked with those obtained by calorimetric measurement.

Jan 1, 1965

The Sixty-First Regular Meeting of the Rocky Mountain Coal Mining Institute convening at the Stanley Hotel in Estes Park, Colorado, was declared in session at 10:00 a.m. by Past President Claude P. Heiner, President, Minerals Development Corporation, Salt Lake City, Utah. Claude introduced Oren F. Bridwell, Secretary, Northern Colorado Coals, Inc., Denver, Colorado. His introduction of President Bridwell follows: Ladies and gentlemen, it is my privilege and pleasure to open this session of the Sixty-first Regular Meeting of the Rocky Mountain Coal Mining Institute. My particular assignment is to introduce to you (those of you at least who do not know him) our Acting President, who for now we will call "Brid."

Jan 1, 1965